Abstract: Method of contactless measurement of the conductivity of semiconductors, said method being implemented by: a first assembly comprising a signal emission/reception system —a second assembly comprising at least one semi-conducting target and an inductor element, —a third assembly, said method comprising at least the following steps: a) the first assembly emits a multifrequency signal, b) the second assembly reflects or transmits at least one part of the multifrequency signal emitted, c) the first assembly receives the reflected multifrequency signal reflected by the second assembly, d) the third assembly calculates the coefficient of reflection or of transmission of the emitted signal, e) the third assembly provides the conductivity of the semiconducting target.

Abstract: Disclosed is a method for diagnosis by reflectometry of a bundle of power lines including an input point and a plurality of branches, including the following steps: inserting (S50) electric markers having different frequency characteristics onto the branches of the bundle; injecting (S52) a test signal into the bundle from the input point; receiving (S54) a set of reflected signals produced by reflections of the test signal in the branches; analyzing all the reflected signals by identifying the markers and by assigning (S56) each reflected signal to one of the branches according to the frequency characteristic of the marker inserted onto the branch; and identifying the presence/absence of a defect in the branch by comparing (S58) the reflected signal assigned to the branch with a reflected signal model obtained by modelling the reflection of the test signal in the branch in the absence of any defect in the branch.

Abstract: Method of contactless measurement of the conductivity of semiconductors, said method being implemented by: a first assembly comprising a signal emission/reception system —a second assembly comprising at least one semi-conducting target and an inductor element, —a third assembly, said method comprising at least the following steps: a) the first assembly emits a multifrequency signal, b) the second assembly reflects or transmits at least one part of the multifrequency signal emitted, c) the first assembly receives the reflected multifrequency signal reflected by the second assembly, d) the third assembly calculates the coefficient of reflection or of transmission of the emitted signal, e) the third assembly provides the conductivity of the semiconducting target.

Abstract: Disclosed is a method for diagnosis by reflectometry of a bundle of power lines including an input point and a plurality of branches, including the following steps: inserting (S50) electric markers having different frequency characteristics onto the branches of the bundle; injecting (S52) a test signal into the bundle from the input point; receiving (S54) a set of reflected signals produced by reflections of the test signal in the branches; analyzing all the reflected signals by identifying the markers and by assigning (S56) each reflected signal to one of the branches according to the frequency characteristic of the marker inserted onto the branch; and identifying the presence/absence of a defect in the branch by comparing (S58) the reflected signal assigned to the branch with a reflected signal model obtained by modelling the reflection of the test signal in the branch in the absence of any defect in the branch.