Patents by Inventor Florent Souche

Florent Souche has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150243833
    Abstract: A method for producing an electrical contact of a semiconductor device, including: depositing an optically transparent electrically conductive layer on a face of the device; depositing first and second dielectric layers on the layer, in which the second dielectric layer can be selectively laser etched; selectively laser etching the second dielectric layer, forming a first opening; producing a second opening aligned with the first opening in the first dielectric layer; depositing an electrically conductive material on the optically transparent electrically conductive layer through the second opening such that portions of the electrically conductive material are deposited on the second dielectric layer, around the first opening; and etching parts of the second dielectric layer which are not covered with portions of the electrically conductive material.
    Type: Application
    Filed: August 22, 2013
    Publication date: August 27, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Thibaut Desrues, Sylvain De Vecchi, Fabien Ozanne, Florent Souche
  • Publication number: 20140373919
    Abstract: A photovoltaic cell including a semiconductor substrate of a first conductivity type provided with a main surface, a first layer made from amorphous semiconductor material of first conductivity type in contact with the main surface of the substrate, a first electric contact formed on the first amorphous layer, a second layer of amorphous semiconductor material of a second conductivity type in contact with the main surface of the substrate, a second electric contact formed on the second amorphous layer and an electrically insulating layer, a cell wherein the electrically insulating layer is formed completely on the first amorphous layer and the first and second contacts extend on the electrically insulating layer.
    Type: Application
    Filed: January 3, 2013
    Publication date: December 25, 2014
    Inventors: Thibaut Desrues, Sylvain De Vecchi, Florent Souche
  • Patent number: 8815108
    Abstract: A method of depositing a non-continuous coating of a first material on a substrate, comprising: a) the formation of a mask on this substrate, by forming at least two mask layers, and etching of at least one cavity in these layers, this cavity having an outline such that a coating, deposited on the substrate, through the cavities of the mask, has at least one discontinuity over said outline of the cavity; b) the deposition of the first material on the substrate, through the cavities of the mask, the coating thus deposited having at least one discontinuity over the outline of said cavity; and c) the mask is removed.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: August 26, 2014
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Bruno Remiat, Laurent Vandroux, Florent Souche
  • Publication number: 20100258524
    Abstract: A method of depositing a non-continuous coating of a first material on a substrate, comprising: a) the formation of a mask on this substrate, by forming at least two mask layers, and etching of at least one cavity in these layers, this cavity having an outline such that a coating, deposited on the substrate, through the cavities of the mask, has at least one discontinuity over said outline of the cavity; b) the deposition of the first material on the substrate, through the cavities of the mask, the coating thus deposited having at least one discontinuity over the outline of said cavity; and c) the mask is removed.
    Type: Application
    Filed: April 3, 2008
    Publication date: October 14, 2010
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Bruno Remiat, Laurent Vandroux, Florent Souche