Abstract: A flip flop includes a data input, a clock input, a test chain input, a test chain output, a monitoring circuit, and an alert transmission circuit. The monitoring circuit is adapted to generate an alert if the time between arrival of a data bit and a clock edge is less than a threshold. The alert transmission circuit is adapted to apply during a monitoring phase an alert level to the test chain output in the event of an alert generated by the monitoring circuit, and to apply the alert level to the test chain output when an alert level is received at the test chain input.

Abstract: A flip flop includes a data input, a clock input, a test chain input, a test chain output, a monitoring circuit, and an alert transmission circuit. The monitoring circuit is adapted to generate an alert if the time between arrival of a data bit and a clock edge is less than a threshold. The alert transmission circuit is adapted to apply during a monitoring phase an alert level to the test chain output in the event of an alert generated by the monitoring circuit, and to apply the alert level to the test chain output when an alert level is received at the test chain input.

Abstract: The disclosure concerns an integrated circuit comprising: a plurality of circuit domains, each circuit domain comprising: a plurality of transistor devices positioned over p-type and n-type wells, the transistor devices defining one or more data paths of the circuit domain; a monitoring circuit adapted to detect when the slack time of at least one of the data paths in the circuit domain falls below a threshold level and to generate an output signal on an output line based on said detection; and a biasing circuit adapted to modify a biasing voltage of the n-type and/or p-type well of the circuit domain.

Abstract: The disclosure concerns an integrated circuit comprising: a plurality of circuit domains, each circuit domain comprising: a plurality of transistor devices positioned over p-type and n-type wells, the transistor devices defining one or more data paths of the circuit domain; a monitoring circuit adapted to detect when the slack time of at least one of the data paths in the circuit domain falls below a threshold level and to generate an output signal on an output line based on said detection; and a biasing circuit adapted to modify a biasing voltage of the n-type and/or p-type well of the circuit domain.

Abstract: The disclosure concerns an integrated circuit comprising: a plurality of circuit domains, each circuit domain comprising: a plurality of transistor devices positioned over p-type and n-type wells, the transistor devices defining one or more data paths of the circuit domain; a monitoring circuit adapted to detect when the slack time of at least one of the data paths in the circuit domain falls below a threshold level and to generate an output signal on an output line based on said detection; and a biasing circuit adapted to modify a biasing voltage of the n-type and/or p-type well of the circuit domain.

Abstract: A method of circuit simulation includes: simulating, by a processing device, behavior of a heterojunction bipolar transistor device based on at least a first base-emitter voltage of the transistor to determine a first base or collector current density of the HBT device; and determining whether the application of the first base-emitter voltage to the HBT device will result in base current degradation by performing a first comparison of the first current density with a first current density limit.

Abstract: An integrated circuit provided with an NMOS transistor includes a metal silicide on source, drain and gate regions and also on at least one portion of the source and drain extension zones The metal silicide portion located on the source and drain extension zones is thinner than the metal silicide portion located on the source and drain regions.