Abstract: In an embodiment a radiation window for a radiation detector or a radiation source includes a window element and a first protection film, wherein the first protection film at least partially covers a first main surface of the window element facing away from the detector or the radiation source, wherein the first protection film increases a robustness of the window element, wherein the window element is configured to sustain a pressure difference of at least 1 atm, and wherein a ratio between a Young's modulus and an indentation modulus of the window element is between 0.5 and 2.

Abstract: In an embodiment a semiconductor detector includes a radiation entry side, a semiconductor body having an implantation region at a main surface facing the radiation entry side, the implantation region being configured to be contacted by a first electrical potential, and an insulator arranged between the radiation entry side and the semiconductor body, the insulator being configured to be contacted by a second electrical potential such that an inversion region is formed in the semiconductor body, wherein the inversion region is arranged in a recess formed in the implantation region and confined by the implantation region, and wherein an area fraction of the recess on a total area of the implantation region is between 0.01% and 4%, inclusive.

Abstract: In an embodiment a radiation window for a radiation detector or a radiation source includes a window element and a first protection film, wherein the first protection film at least partially covers a first main surface of the window element facing away from the detector or the radiation source, wherein the first protection film increases a robustness of the window element, wherein the window element is configured to sustain a pressure difference of at least 1 atm, and wherein a ratio between a Young's modulus and an indentation modulus of the window element is between 0.5 and 2.

Abstract: In an embodiment a method includes providing a semiconductor body with a first main side and an opposite, second main side, wherein the semiconductor body is configured to detect radiation with an energy of at least 10 eV, and wherein the first main side includes a radiation entrance area for the radiation, generating a bottom insulation layer located directly at the first main side, the bottom insulation layer comprising a first electrically insulating material, applying a sacrificial layer directly on the bottom insulation layer across the entrance area so that throughout the entrance area the bottom insulation layer is between the semiconductor body and the sacrificial layer, applying a reinforcing layer over the bottom insulation layer so that the sacrificial layer is sandwiched between the bottom insulation layer and the reinforcing layer, the reinforcing layer comprising a second electrically insulating material and exposing the bottom insulation layer from the sacrificial layer and from the reinforcing

Abstract: A pulsed electric operating current that rises during a pulse duration is generated for operating at least one radiation-emitting semiconductor component. For this purpose, in a method for producing a control device for operating the at least one radiation-emitting semiconductor component, a temporal profile of a thermal impedance representative of the at least one radiation-emitting semiconductor component is determined. A profile of the electric operating current that is to be set is determined depending on the determined temporal profile of the thermal impedance. The control device is furthermore designed such that the profile of the operating current that is to be set is set in each case during the pulse duration.

Abstract: A pulsed electric operating current that rises during a pulse duration is generated for operating at least one radiation-emitting semiconductor component. For this purpose, in a method for producing a control device for operating the at least one radiation-emitting semiconductor component, a temporal profile of a thermal impedance representative of the at least one radiation-emitting semiconductor component is determined. A profile of the electric operating current that is to be set is determined depending on the determined temporal profile of the thermal impedance. The control device is furthermore designed such that the profile of the operating current that is to be set is set in each case during the pulse duration.