Patents by Inventor Florian DUPONT
Florian DUPONT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240411158Abstract: A device including, stacked in a vertical direction (z), a silicon-based substrate, a nucleation layer made of a nitride-based refractory material, a lithium niobate-based layer portion, called LNO portion, made of mesa on the nucleation layer, the LNO portion being bordered by a masking layer. The device further includes at least one electrode configured to apply an electric field to the LNO portion. A method for producing such a device, including a formation by localised epitaxy of the LNO portion, is also disclosed.Type: ApplicationFiled: June 3, 2024Publication date: December 12, 2024Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Florian DUPONT, Yohan DESIERES
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Publication number: 20240234586Abstract: A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate; and c) forming, on the first layer, by epitaxial growth from the front face of the substrate, at least one second layer of a III-V material, preferably III-N.Type: ApplicationFiled: October 24, 2023Publication date: July 11, 2024Applicant: Commissariat á I'Énergie Atomique et aux Énergies AlternativesInventor: Florian Dupont
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Publication number: 20240204132Abstract: An optoelectronic device having a stack including an alternation of at least one semiconductor layer of a first material and of semiconductor layers of a second material, each layer of the first material being sandwiched between two layers of the second material and defining a quantum well, wherein the first material is an inorganic perovskite material, and the second material is an inorganic semiconductor material.Type: ApplicationFiled: April 4, 2022Publication date: June 20, 2024Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVESInventor: Florian Dupont
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Publication number: 20240188444Abstract: A method for transferring a layer of interest from a donor substrate to a receiver substrate includes providing the donor substrate made of a transparent material at a wavelength ?, forming at least one sacrificial buffer layer made of an absorbent sacrificial material at the wavelength ?, on the donor substrate, forming the layer of interest on the at least one sacrificial buffer layer, and bonding the layer of interest on the receiver substrate. The at least one sacrificial buffer layer is illuminated by a laser at the wavelength ? through the donor substrate so as to remove the at least one sacrificial buffer layer to separate the layer of interest from the donor substrate.Type: ApplicationFiled: December 5, 2022Publication date: June 6, 2024Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Florian DUPONT, Guillaume RODRIGUEZ
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Patent number: 12002841Abstract: An optoelectronic device includes first and second light-emitting diodes, each LED having: a first semiconductor portion, with a first type of doping, having a wire-like shape along an axis and having side surfaces parallel to this axis; an active portion arranged at least partially on a top end of the first portion; and a second semiconductor portion, with a second type of doping, arranged at least partially on all or part of the active portion. The optoelectronic device further includes an electrically resistive layer having an electrical resistance that is higher than that of the active portion, covering at least all or part of the side surfaces of the first portion and all or part of the surface of the top end of the first portion not covered by the active portion. The resistive layers of the first and second LEDs are separated from one another.Type: GrantFiled: May 28, 2020Date of Patent: June 4, 2024Assignee: ALEDIAInventors: Florian Dupont, Jérôme Napierala
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Publication number: 20240145614Abstract: The present description relates to a light emitting and receiving device including:-a light-emitting diode including a first active layer, a first electrode in contact with the lower face of the first active layer, and a second electrode in contact with the upper face of the first active layer; and opposite the light-emitting diode, on an emission face of the light-emitting diode, a light conversion and detection element comprising a second active layer, a third electrode in contact with the lower face of the second active layer, and a fourth electrode in contact with the upper face of the second active layer.Type: ApplicationFiled: October 24, 2023Publication date: May 2, 2024Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventor: Florian Dupont
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Publication number: 20240136446Abstract: A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate; and c) forming, on the first layer, by epitaxial growth from the front face of the substrate, at least one second layer of a III-V material, preferably III-N.Type: ApplicationFiled: October 23, 2023Publication date: April 25, 2024Applicant: Commissariat á I'Énergie Atomique et aux Énergies AlternativesInventor: Florian Dupont
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Publication number: 20240128303Abstract: An optoelectronic device including a light-emitting diode covered with a photoluminescent conversion layer based on a perovskite material.Type: ApplicationFiled: February 11, 2022Publication date: April 18, 2024Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Florian Dupont, Francois Templier
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Publication number: 20240055561Abstract: A method for manufacturing three-dimensional (3D) structures for optoelectronics, each 3D structure including, in a stack along (z), a bottom part bearing on a substrate, an active region configured to emit light radiation, said active region bearing on a top of the bottom part, and a top part bearing on a top of the active region, the method including provision of a substrate carrying a plurality of bottom parts of 3D structures, said bottom parts having distinct tops such that the tops of two adjacent bottom parts are separated from each other by a separation distance ds of less than 180 nm, formation by metalorganic vapour-phase epitaxy (MOVPE) of the active regions on the tops of the bottom parts, formation of the top parts on the tops of the active regions. An embodiment also relates to an optoelectronic device based on a plurality of these 3D structures.Type: ApplicationFiled: December 17, 2021Publication date: February 15, 2024Inventors: Florian DUPONT, Jérôme NAPIERALA
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Publication number: 20230231076Abstract: A three-dimensional (3D) structure for optoelectronics including a pyramid made of a first InGaN-based material formed from a substrate, wherein the 3D structure includes a wire made of a second GaN-based material, different from the first material, the wire extending in a longitudinal direction perpendicular to the plane of the substrate between the substrate and a base of the InGaN-based pyramid, so that the 3D structure has the general shape of a pencil. One or more embodiments of the invention also relates to a method for manufacturing such a 3D structure, and an optoelectronic device based on a plurality of these 3D structures.Type: ApplicationFiled: May 26, 2021Publication date: July 20, 2023Inventors: Jérôme NAPIERALA, Florian DUPONT
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Publication number: 20230216474Abstract: An electroacoustic device includes, stacked in a direction a silicon-based substrate, a first electrode, a piezoelectric layer with the basis of a perovskite taken from among lithium niobate LiNbO3, lithium tantalum LiTaO3, or an Li(Nb,Ta)O3 alloy, on the first electrode, a second electrode disposed on the piezoelectric layer. Advantageously, the first electrode is made of a nitride-based electrically conductive refractory material, such as TiN, VN, TaN. The invention also relates to a method for producing such a device.Type: ApplicationFiled: December 5, 2022Publication date: July 6, 2023Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Florian DUPONT, Guillaume RODRIGUEZ
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Publication number: 20230179165Abstract: A method for forming a lithium niobate- or lithium tantalum-based (LN/LT) layer includes providing a silicon-based substrate, forming nucleation layer on the substrate, and forming the LN/LT layer by epitaxy on the nucleation layer. The nucleation layer is chosen based upon a III-N material. The nucleation layer may be used in a surface acoustic wave device.Type: ApplicationFiled: December 5, 2022Publication date: June 8, 2023Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Florian DUPONT, Guillaume RODRIGUEZ, Laura SAUZE
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Publication number: 20230035764Abstract: A device configured for a laser treatment including a substrate transparent for the laser and objects, each object being bonded to the substrate via a photonic crystal.Type: ApplicationFiled: December 18, 2020Publication date: February 2, 2023Applicant: AlediaInventors: Tiphaine Dupont, Mehdi Daanoune, Olivier Jeannin, Ivan-Christophe Robin, Florian Dupont
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Publication number: 20230029638Abstract: A device configured for a treatment with a laser, including a support transparent for the laser and at least one optoelectronic circuit including at least one optoelectronic component having a three-dimensional semiconductor element covered with an active layer, the three-dimensional semiconductor element including a base bonded to the support, the device including a region absorbing for the laser resting on the support and surrounding the base.Type: ApplicationFiled: December 22, 2020Publication date: February 2, 2023Applicant: AlediaInventors: Florian Dupont, Olivier Jeannin, Tiphaine Dupont, Mehdi Daanoune
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Publication number: 20220351971Abstract: A method of manufacturing a device including micrometer- or nanometer-range wires including a III-V compound, including, for each wire, the forming of at least a portion of the wire by a step of metal-organic vapor epitaxy including the injection into a reactor of a first precursor gas of the group-V element, of a second precursor gas of the group-III element, and of a third precursor gas of an additional element, dopant of the III-V compound, of a gas capable of obtaining a dopant concentration greater than 5.1019 atoms/cm3, for example, greater than 1.1020 atoms/cm3, in the wire portion in the case where the portion has a homogeneous dopant concentration.Type: ApplicationFiled: June 26, 2020Publication date: November 3, 2022Applicant: AlediaInventors: Florian Dupont, Jérôme Napierala
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Publication number: 20220231076Abstract: An optoelectronic device includes first and second light-emitting diodes, each LED having: a first semiconductor portion, with a first type of doping, having a wire-like shape along an axis and having side surfaces parallel to this axis; an active portion arranged at least partially on a top end of the first portion; and a second semiconductor portion, with a second type of doping, arranged at least partially on all or part of the active portion. The optoelectronic device further includes an electrically resistive layer having an electrical resistance that is higher than that of the active portion, covering at least all or part of the side surfaces of the first portion and all or part of the surface of the top end of the first portion not covered by the active portion. The resistive layers of the first and second LEDs are separated from one another.Type: ApplicationFiled: May 28, 2020Publication date: July 21, 2022Inventors: Florian DUPONT, Jérôme NAPIERALA
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Patent number: 10886427Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.Type: GrantFiled: June 26, 2017Date of Patent: January 5, 2021Assignees: ALEDIA, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Florian Dupont, Benoit Amstatt, Vincent Beix, Thomas Lacave, Philippe Gilet, Ewen Henaff, Berangere Hyot, Hubert Bono
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Patent number: 10801129Abstract: A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.Type: GrantFiled: June 26, 2017Date of Patent: October 13, 2020Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIAInventors: Benoit Amstatt, Florian Dupont, Ewen Henaff, Berangere Hyot
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Patent number: 10636653Abstract: The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).Type: GrantFiled: October 25, 2013Date of Patent: April 28, 2020Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIAInventors: Bérangère Hyot, Benoit Amstatt, Marie-Françoise Armand, Florian Dupont
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Patent number: 10340138Abstract: The electronic device comprises a substrate (1), at least one semiconductor wire element (2) formed by a nitride of a group III material and an electroconductive layer (3) interposed between the substrate (1) and said at least one semiconductor wire element (2). Said at least one semiconductor wire element (2) extends from said electroconductive layer (3), and the electroconductive layer (3) comprises a carbide of zirconium or a carbide of hafnium.Type: GrantFiled: December 4, 2015Date of Patent: July 2, 2019Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIAInventors: Florian Dupont, Benoit Amstatt, Bérangère Hyot