Patents by Inventor Florian Hilt

Florian Hilt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11812621
    Abstract: The present invention refers to a three terminal tandem solar generation unit (1) comprising: —a first absorbing layer (7) made of a perovskite type compound, —a second absorbing layer (11, 11?), —a first and a second interdigitated front contacts (5a, 5b) arranged on the front side of the first absorbing layer (7), the first front contact (5a) having a first polarity and the second front contact (5b) having a second polarity, —a back contact (17, 17?) having the first or the second polarity arranged on the back side of the second absorbing layer (11, 11?), —an interface layer (9, 90, 9?, 90?) arranged between the first (7) and the second (11, 11?) absorbing layers comprising a first semiconductor sub-layer (9a, 90a, 9a?, 90a?) doped according to the first polarity and a second sub-layer (9b, 90b, 9b?, 90b?) doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact (17, 17?) to be transferred from the second absorbing
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: November 7, 2023
    Inventors: Florian Hilt, Philip Schulz, Etienne Drahi
  • Publication number: 20220045130
    Abstract: The present invention refers to a three terminal tandem solar generation unit (1) comprising: —a first absorbing layer (7) made of a perovskite type compound, —a second absorbing layer (11, 11?), —a first and a second interdigitated front contacts (5a, 5b) arranged on the front side of the first absorbing layer (7), the first front contact (5a) having a first polarity and the second front contact (5b) having a second polarity, —a back contact (17, 17?) having the first or the second polarity arranged on the back side of the second absorbing layer (11, 11?), —an interface layer (9, 90, 9?, 90?) arranged between the first (7) and the second (11, 11?) absorbing layers comprising a first semiconductor sub-layer (9a, 90a, 9a?, 90a?) doped according to the first polarity and a second sub-layer (9b, 90b, 9b?, 90b?) doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact (17, 17?) to be transferred from the second absorbing
    Type: Application
    Filed: December 16, 2019
    Publication date: February 10, 2022
    Inventors: Florian HILT, Philip SCHULZ, Etienne DRAHI
  • Patent number: 10636632
    Abstract: Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: April 28, 2020
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Florian Hilt, Michael Q. Hovish, Nicholas Rolston, Reinhold H. Dauskardt
  • Patent number: 10471465
    Abstract: The invention provides a method for forming regular polymer thin films on a substrate using atmospheric plasma discharges. In particular, the method allows for the deposition of functional polymer thin films which require a high regularity and a linear polymer structure.
    Type: Grant
    Filed: May 6, 2015
    Date of Patent: November 12, 2019
    Assignee: Luxembourg Institute of Science and Technology (LIST)
    Inventors: Nicolas Boscher, Patrick Choquet, David Duday, Florian Hilt
  • Publication number: 20180204709
    Abstract: Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.
    Type: Application
    Filed: January 18, 2018
    Publication date: July 19, 2018
    Inventors: Florian Hilt, Michael Q. Hovish, Nicholas Rolston, Reinhold H. Dauskardt
  • Publication number: 20170050214
    Abstract: The invention provides a method for forming regular polymer thin films on a substrate using atmospheric plasma discharges. In particular, the method allows for the deposition of functional polymer thin films which require a high regularity and a linear polymer structure.
    Type: Application
    Filed: May 6, 2015
    Publication date: February 23, 2017
    Applicant: Luxembourg Institute of Science and Technology (LIST)
    Inventors: Nicolas Boscher, Patrick Choquet, David Duday, Florian Hilt