Abstract: A method is provided that includes the steps of i) providing a specimen in the form of a wafer having a measurement area and a reference area, assumed to be without deformations and coplanar with the measurement area; ii) illuminating one face of the specimen with an electron beam (Fin); iii) superposing a beam (F1B) of radiation diffracted by the measurement area (B) with a beam (F1A) of the radiation diffracted by the reference so as to cause these two beams to interfere; iv) measuring the spatial periodicity and the orientation of the fringes of the interference pattern (FI); and v) deducing from this a difference in the lattice parameter and/or the orientation between the reference and measurement areas, which is indicative of a state of deformation of the latter at the nanoscale. A device and system for implementing the method is also provided.

Abstract: A method for measuring nanoscale deformations in a portion (B) of a crystal specimen, comprising steps consisting in: i) preparing a specimen in the form of a wafer comprising a measurement area (B) and a reference area (A), assumed to be without deformations and coplanar with the measurement area; ii) illuminating one face of said specimen with an electron beam (Fin); iii) superposing a beam (F1B) of radiation diffracted by the measurement area (B) with a beam (F1A) of the radiation diffracted by the reference area (A) so as to cause these two beams to interfere; iv) measuring the spatial periodicity and the orientation of the fringes of the interference pattern (FI); and v) deducing from this a difference in the lattice parameter and/or the orientation between said reference and measurement areas, which is indicative of a state of deformation of the latter at the nanoscale. A device and system for implementing such a method.