Patents by Inventor Florian Krach

Florian Krach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor and method for producing the same
    Patent number: 11854890
    Abstract: In a method for producing a capacitor, a dielectric structure is generated in a trench of a semiconductor substrate. The dielectric structure includes a plurality of adjacent dielectric layers having opposing material tensions.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: December 26, 2023
    Assignees: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V., Friedrich-Alexander-Universitaet Erlangen-Nuernberg
    Inventors: Florian Krach, Tobias Erlbacher
  • CAPACITOR AND METHOD FOR PRODUCING THE SAME
    Publication number: 20210210386
    Abstract: In a method for producing a capacitor, a dielectric structure is generated in a trench of a semiconductor substrate. The dielectric structure includes a plurality of adjacent dielectric layers having opposing material tensions.
    Type: Application
    Filed: March 1, 2021
    Publication date: July 8, 2021
    Inventors: Florian KRACH, Tobias ERLBACHER
  • Capacitor and method for producing the same
    Patent number: 10937696
    Abstract: In a method for producing a capacitor, a dielectric structure is generated in a trench of a semiconductor substrate. The dielectric structure includes a plurality of adjacent dielectric layers having opposing material tensions.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: March 2, 2021
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
    Inventors: Florian Krach, Tobias Erlbacher
  • Unknown
    Publication number: 20160190230
    Abstract: In a method for producing a capacitor, a dielectric structure is generated in a trench of a semiconductor substrate. The dielectric structure includes a plurality of adjacent dielectric layers having opposing material tensions.
    Type: Application
    Filed: November 24, 2015
    Publication date: June 30, 2016
    Inventors: Florian KRACH, Tobias ERLBACHER
  • Electronic device
    Patent number: 9269774
    Abstract: An electronic device (1) includes a semiconductor substrate (3) having a front surface (7), a first electrode (8) and a second electrode (9) disposed on the front surface (7) of the substrate (3), wherein the first electrode (8) and the second electrode (9) each have at least one epitaxial graphene monolayer (10). The at least one epitaxial graphene monolayer (10) of the first electrode (8) forms an ohmic contact with the substrate (3) and the at least one epitaxial graphene monolayer (10) of the second electrode (9) forms a Schottky barrier with the substrate (3).
    Type: Grant
    Filed: June 18, 2012
    Date of Patent: February 23, 2016
    Assignee: Friedrich-Alexander-Universität Erlangen-Nürnberg
    Inventors: Heiko B. Weber, Michael Krieger, Stefan Hertel, Florian Krach, Johannes Jobst, Daniel Waldmann
  • Semiconductor component
    Patent number: 9263526
    Abstract: A semiconductor component (1, 20, 30) comprising a semiconductor substrate (3) composed of silicon carbide and comprising separate electrodes (4, 5) applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene (11) on silicon carbide, in such a way that a current channel is formed between the electrodes (4, 5) through the semiconductor substrate (3).
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: February 16, 2016
    Assignee: Friedrich-Alexander-Universität Erlangen-Nürnberg
    Inventors: Heiko B. Weber, Michael Krieger, Stefan Hertel, Florian Krach, Johannes Jobst, Daniel Waldmann
  • SEMICONDUCTOR COMPONENT
    Publication number: 20150060881
    Abstract: A semiconductor component (1, 20, 30) comprising a semiconductor substrate (3) composed of silicon carbide and comprising separate electrodes (4, 5) applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene (11) on silicon carbide, in such a way that a current channel is formed between the electrodes (4, 5) through the semiconductor substrate (3).
    Type: Application
    Filed: March 29, 2012
    Publication date: March 5, 2015
    Applicant: FRIEDRICH-ALEXANDER-UNIVERSITAT ERLANGEN- NURNBERG
    Inventors: Heiko B. Weber, Michael Krieger, Stefan Hertel, Florian Krach, Johannes Jobst, Daniel Waldmann
  • ELECTRONIC DEVICE
    Publication number: 20140225066
    Abstract: An electronic device (1) includes a semiconductor substrate (3) having a front surface (7), a first electrode (8) and a second electrode (9) disposed on the front surface (7) of the substrate (3), wherein the first electrode (8) and the second electrode (9) each have at least one epitaxial graphene monolayer (10). The at least one epitaxial graphene monolayer (10) of the first electrode (8) forms an ohmic contact with the substrate (3) and the at least one epitaxial graphene monolayer (10) of the second electrode (9) forms a Schottky barrier with the substrate (3).
    Type: Application
    Filed: June 18, 2012
    Publication date: August 14, 2014
    Applicant: FRIEDRICH-ALEXANDER-UNIVERSITÄT ERLANGEN-NÜRNBERG
    Inventors: Heiko B. Weber, Michael Krieger, Stefan Hertel, Florian Krach, Johannes Jobst, Daniel Waldmann