Abstract: A half-bridge having power connections and signal connections shaped from a leadframe, the signal connections electrically connected to semiconductor switching elements so that they can be switched by the signal connections, and the power connections are electrically connected to the switching elements in so that they switch an electrical power transmission between the power connections. The switching elements are embedded in a modular layer system including a contact-connection plane and a metallization for contact-connecting the switching elements, the signal connections and the power connections are arranged on a first surface of the substrate.

Abstract: An inverter includes a DC input, a link capacitor including a plurality of input contacts fitted to a capacitor housing, a plurality of half-bridges, each including semiconductor switching elements for converting the DC current into an AC current having a plurality of phase currents, wherein the half-bridges are arranged in a row along a transverse direction to the inverter, a positive DC conductor rail and a negative DC conductor rail for the infeed of DC current to the half-bridges, wherein the positive and/or negative DC conductor rail extends in a transverse direction to the inverter over the row of half-bridges, such that the width of the positive and/or negative DC conductor rail extends to the width of the row of half-bridges, an AC conductor rail assembly for the output of AC current to the electric drive, and a cooler for cooling the half-bridges.

Abstract: A power module includes a plurality of half-bridges, each including a substrate, a plurality of semiconductor switching elements, a positive DC power connection, a negative DC power connection, an AC power connection and a plurality of signal connections, wherein a respective DC busbar is connected to the respective DC power connection, wherein the two DC busbars extend from the half-bridges up to an intermediate circuit capacitor, wherein at least one of the two DC busbars is formed in one piece outside of the intermediate circuit capacitor with respect to the plurality of half-bridges.

Abstract: An inverter includes a DC input, a link capacitor including a plurality of input contacts fitted to a capacitor housing, a plurality of half-bridges, each including semiconductor switching elements for converting the DC current into an AC current having a plurality of phase currents, wherein the half-bridges are arranged in a row along a transverse direction to the inverter, a positive DC conductor rail and a negative DC conductor rail for the infeed of DC current to the half-bridges, wherein the positive and/or negative DC conductor rail extends in a transverse direction to the inverter over the row of half-bridges, such that the width of the positive and/or negative DC conductor rail extends to the width of the row of half-bridges, an AC conductor rail assembly for the output of AC current to the electric drive, and a cooler for cooling the half-bridges.

Abstract: A half-bridge having power connections and signal connections shaped from a leadframe, the signal connections electrically connected to semiconductor switching elements so that they can be switched by the signal connections, and the power connections are electrically connected to the switching elements in so that they switch an electrical power transmission between the power connections. The switching elements are embedded in a modular layer system including a contact-connection plane and a metallization for contact-connecting the switching elements, the signal connections and the power connections are arranged on a first surface of the substrate.

Abstract: A power module (10) for an inverter (100) for operating an electric drive in an electric vehicle or a hybrid vehicle, the power module (10) comprising a plurality of half-bridges (12A, 12B, 12C), which each comprise a substrate, a plurality of semiconductor switching elements, a positive DC power connection (14), a negative DC power connection (16), an AC power connection and a plurality of signal connections (18), wherein the signal connections (18) are electrically connected to the semiconductor switching elements in each half-bridge (12A, 12B, 12C) in such a way that the semiconductor switching elements can be switched by means of the signal connections (18), wherein the power connections (14, 16) are electrically connected to the semiconductor switching elements in such a way that the semiconductor switching elements permit or interrupt an electrical power transmission between the power connections (14, 16), wherein a respective DC busbar (24, 26), which is connected to the respective DC power connection