Abstract: A heterojunction electronic component includes a substrate; a heterojunction including a channel layer arranged on the substrate and a barrier layer arranged on the channel layer; a passivation layer arranged on the barrier layer; a field plate separated from the barrier layer by a portion of the passivation layer; and a floating region made from a p-doped semiconductor material, located in the barrier layer in vertical alignment with a flank of the field plate, the floating region having a thickness less than that of the barrier layer.

Abstract: Electron gas transistor of normally open type, includes a first semiconductor layer laid out along a layer plane and a second semiconductor layer formed on the first semiconductor layer and laid out along the layer plane, the first and second semiconductor layers forming an electron gas layer at the interface thereof; a third semiconductor layer with P type doping formed on the second semiconductor layer and laid out along the layer plane, a first zone with N type doping of which a part is arranged within the thickness of the third semiconductor layer, the first zone-delimiting a source zone; a second zone with N or metal type doping having at least one part arranged in the second semiconductor layer; a source electrode formed on the source zone; a drain electrode formed on the first semiconductor layer; and a gate located between the source electrode and the second zone.

Abstract: A heterojunction electronic component includes a substrate; a heterojunction including a channel layer arranged on the substrate and a barrier layer arranged on the channel layer; a passivation layer arranged on the barrier layer; a field plate separated from the barrier layer by a portion of the passivation layer; and a floating region made from a p-doped semiconductor material, located in the barrier layer in vertical alignment with a flank of the field plate, the floating region having a thickness less than that of the barrier layer.

Abstract: Electron gas transistor of normally open type, includes a first semiconductor layer laid out along a layer plane and a second semiconductor layer formed on the first semiconductor layer and laid out along the layer plane, the first and second semiconductor layers forming an electron gas layer at the interface thereof; a third semiconductor layer with P type doping formed on the second semiconductor layer and laid out along the layer plane, a first zone with N type doping of which a part is arranged within the thickness of the third semiconductor layer, the first zone-delimiting a source zone; a second zone with N or metal type doping having at least one part arranged in the second semiconductor layer; a source electrode formed on the source zone; a drain electrode formed on the first semiconductor layer; and a gate located between the source electrode and the second zone.