Abstract: The invention relates to a DEPFET comprising: a semiconductor substrate (100) of a first conduction type, which has a first main surface (101) and a second main surface (102), which are opposite one another; a source terminal region (1s) of a second conduction type on the first main surface (101); a drain terminal region (1d) of a second conduction type; a channel region (10), which is arranged between the source terminal region (1s) and the drain terminal region (1d); a gate electrode (11), which is separated from the channel region (10) by a gate insulator (6); a rear activation region (104) of a second conduction type, which is formed on the second main surface (102); and a substrate doping increase region (2) of a first conduction type, which is formed at least under the source terminal region (1s) and under the channel region (10), the substrate doping increase region (2) having a signal charge control region (20) of the first conduction type below the gate electrode (11), in which signal charge control

Abstract: An avalanche photodiode array for detecting electromagnetic radiation comprises: a semiconductor substrate (100) having a first main surface (101) and a second main surface (102), which are opposite one another, a plurality of n-doped anode regions (1) formed at the first main surface (101) and separated from one another by pixel isolation regions (7), a p-doped cathode region (3) arranged at the second main surface (102) opposite the anode regions, a drift region (4) between the plurality of anode regions (1) and the cathode region (3), and a p-doped multiplication layer (2) arranged below the plurality of anode regions (1) and below the pixel isolation regions (7), and is characterized by an n-doped field reduction layer (9) arranged below the plurality of anode regions (1) and the pixel isolation regions (7) and above the multiplication layer (2).

Abstract: The invention relates to a DEPFET comprising: a semiconductor substrate (100) of a first conduction type, which has a first main surface (101) and a second main surface (102), which are opposite one another; a source terminal region (1s) of a second conduction type on the first main surface (101); a drain terminal region (1d) of a second conduction type; a channel region (10), which is arranged between the source terminal region (1s) and the drain terminal region (1d); a gate electrode (11), which is separated from the channel region (10) by a gate insulator (6); a rear activation region (104) of a second conduction type, which is formed on the second main surface (102); and a substrate doping increase region (2) of a first conduction type, which is formed at least under the source terminal region (1s) and under the channel region (10), the substrate doping increase region (2) having a signal charge control region (20) of the first conduction type below the gate electrode (11), in which signal charge control

Abstract: The invention relates to a DEPFET comprising: a semiconductor substrate (100) of a first conduction type, which has a first main surface (101) and a second main surface (102), which are opposite one another; a source terminal region (1s) of a second conduction type on the first main surface (101); a drain terminal region (1d) of a second conduction type; a channel region (10), which is arranged between the source terminal region (1s) and the drain terminal region (1d); a gate electrode (11), which is separated from the channel region (10) by a gate insulator (6); a rear activation region (104) of a second conduction type, which is formed on the second main surface (102); and a substrate doping increase region (2) of a first conduction type, which is formed at least under the source terminal region (1s) and under the channel region (10), the substrate doping increase region (2) having a signal charge control region (20) of the first conduction type below the gate electrode (11), in which signal charge control

Abstract: The invention relates to a DEPFET comprising: a semiconductor substrate (100) of a first conduction type, which has a first main surface (101) and a second main surface (102), which are opposite one another; a source terminal region (1s) of a second conduction type on the first main surface (101); a drain terminal region (1d) of a second conduction type; a channel region (10), which is arranged between the source terminal region (1s) and the drain terminal region (1d); a gate electrode (11), which is separated from the channel region (10) by a gate insulator (6); a rear activation region (104) of a second conduction type, which is formed on the second main surface (102); and a substrate doping increase region (2) of a first conduction type, which is formed at least under the source terminal region (1s) and under the channel region (10), the substrate doping increase region (2) having a signal charge control region (20) of the first conduction type below the gate electrode (11), in which signal charge control

Abstract: The invention relates to a DEPFET comprising: a semiconductor substrate (100) of a first conduction type, which has a first main surface (101) and a second main surface (102), which are opposite one another; a source terminal region (1s) of a second conduction type on the first main surface (101); a drain terminal region (1d) of a second conduction type; a channel region (10), which is arranged between the source terminal region (1s) and the drain terminal region (1d); a gate electrode (11), which is separated from the channel region (10) by a gate insulator (6); a rear activation region (104) of a second conduction type, which is formed on the second main surface (102); and a substrate doping increase region (2) of a first conduction type, which is formed at least under the source terminal region (1s) and under the channel region (10), the substrate doping increase region (2) having a signal charge control region (20) of the first conduction type below the gate electrode (11), in which signal charge control

Abstract: An avalanche photodiode array for detecting electromagnetic radiation comprises: a semiconductor substrate (100) having a first main surface (101) and a second main surface (102), which are opposite one another, a plurality of n-doped anode regions (1) formed at the first main surface (101) and separated from one another by pixel isolation regions (7), a p-doped cathode region (3) arranged at the second main surface (102) opposite the anode regions, a drift region (4) between the plurality of anode regions (1) and the cathode region (3), and a p-doped multiplication layer (2) arranged below the plurality of anode regions (1) and below the pixel isolation regions (7), and is characterized by an n-doped field reduction layer (9) arranged below the plurality of anode regions (1) and the pixel isolation regions (7) and above the multiplication layer (2).

Abstract: The invention concerns a detector arrangement for detection of radiation, in particular particle radiation or electromagnetic radiation, with a semi-conductor detector with several pixels for detection of the radiation. It is proposed that the individual pixels each have a first subpixel (1) and a second subpixel (2). The semi-conductor detector can be switched between a first collection state, in which the first subpixel (1) is sensitive and the second subpixel (2) is insensitive so that radiation-generated signal charge carriers are substantially collected only in the first subpixel (1), and a second collection state in which the second subpixel (2) is sensitive and the first subpixel (1) is insensitive so that the radiation-generated signal charge carriers are collected substantially only in the second subpixel (2). The invention furthermore concerns a corresponding operating method and detector arrangements based on the same concept with a higher number of subpixels per pixel.

Abstract: The invention concerns a detector arrangement for detection of radiation, in particular particle radiation or electromagnetic radiation, with a semi-conductor detector with several pixels for detection of the radiation. It is proposed that the individual pixels each have a first subpixel (1) and a second subpixel (2). The semi-conductor detector can be switched between a first collection state, in which the first subpixel (1) is sensitive and the second subpixel (2) is insensitive so that radiation-generated signal charge carriers are substantially collected only in the first subpixel (1), and a second collection state in which the second subpixel (2) is sensitive and the first subpixel (1) is insensitive so that the radiation-generated signal charge carriers are collected substantially only in the second subpixel (2). The invention furthermore concerns a corresponding operating method and detector arrangements based on the same concept with a higher number of subpixels per pixel.

Abstract: The invention relates to an extrusion billet having two end sides, characterized in that the surface of at least one end side face has a three-dimensional topography which is composed of a substantially planar end side face from which local elevations protrude.

Abstract: The invention relates to a heat exchanger for small components through which a fluid may flow, made from several individual pieces, exclusively produced by forming and joined to each other, to an inlet channel, a planar heat exchange element and an outlet channel. The heat exchange element comprises an upper and lower side which may be connected to at least one heat source, characterized in that the inlet channel is made from a metal connector tube which continuously enlarges towards the heat exchange element on the inlet side up to the total cross-sectional flow area of the inlet side and face of the heat exchange element and the outlet channel continuously tapers away from the heat exchanger on the outlet side from the total cross-sectional flow area of the output side end face of the heat exchanger element to a metal connector tube.

Abstract: The invention relates to an extrusion billet having two end sides, characterized in that the surface of at least one end side has a three-dimensional topography which is composed of a substantially planar end side face from which local elevations protrude.