Abstract: A method of manufacturing a microelectronic device including the following steps: a) providing a substrate, a cavity being formed from a first main surface of the substrate, the bottom of the cavity being made of a first material, the first main surface being made of a second material, b) performing a selective epitaxy of a third material in the cavity to form an epitaxial structure filling and protruding out of the cavity by a so-called protrusion thickness, c) depositing an encapsulation layer made of a fourth material on the substrate and the epitaxial structure, d) carrying out a CMP thinning step to remove the encapsulation layer and the portion of the epitaxial material protruding from the first main surface, the thickness of the deposited encapsulation layer being in the range from 20 to 200% of the protrusion thickness.

Abstract: An integrated structure that includes: a substrate; a conductive layer, the conductive layer having a first cavity, the first cavity being filled with a first insulating region, the first insulating region having a top surface flush with a top surface of the conductive layer to form a first planar surface; a protective liner on the top surface of the conductive layer and the top surface of the first insulating region; and an anodization barrier layer on the protective liner, the protective liner and the anodization barrier layer having a second cavity passing through the protective liner and the anodization barrier layer and opening onto the first insulating region, the second cavity being filled with a second insulating region, the second insulating region having a top surface flush with a top surface of the anodization barrier layer to form a second planar surface.

Abstract: A method of manufacturing an integrated device that includes: forming, on a substrate, a metal anodization barrier layer; planarizing the metal anodization barrier layer; forming, on the planarized metal anodization barrier layer, an anodizable metal layer; planarizing the anodizable metal layer; and anodizing the planarized anodizable metal layer to obtain an anodic porous oxide region having a plurality of substantially straight pores that extend from a top surface of the anodic porous oxide region towards the metal anodization barrier layer.

Abstract: Method including the steps of a) Providing a first stack including a first substrate on which is deposited a first metal layer including a first metal, and a first solubilization layer distinct from the first metal layer, the first solubilization layer including a first getter material configured to solubilize the oxygen, b) Providing a second stack including a second substrate on which is deposited a second metal layer including a second metal, c) Contacting the first metal layer and the second metal layer so as to obtain a direct metal bonding between the first metal layer and the second metal layer, and d) Applying a heat treatment for annealing the bonding.

Abstract: Method including the steps of a) Providing a first stack including a first substrate on which is deposited a first metal layer including a first metal, and a first solubilization layer distinct from the first metal layer, the first solubilization layer including a first getter material configured to solubilize the oxygen, b) Providing a second stack including a second substrate on which is deposited a second metal layer including a second metal, c) Contacting the first metal layer and the second metal layer so as to obtain a direct metal bonding between the first metal layer and the second metal layer, and d) Applying a heat treatment for annealing the bonding.