Patents by Inventor Fon Yuan

Fon Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for utilizing rough insulator to enhance metal-insulator-semiconductor reliability
    Patent number: 6794309
    Abstract: A method for utilizing a rough insulator to enhance metal-insulator-semiconductor reliability is provided. The method includes steps of: (a) providing a semiconductor substrate; (b) prebaking the semiconductor substrate under a relatively high vacuum to form a rough surface on the semiconductor substrate; and (c) growing an insulator on the semiconductor substrate to form a rough insulator and increase the metal-insulator-semiconductor reliability when the insulator is applied.
    Type: Grant
    Filed: April 15, 2002
    Date of Patent: September 21, 2004
    Assignee: National Taiwan University
    Inventors: Chee-Wee Liu, Fon Yuan, Chung-Hsun Lin
  • Semiconductor phototransistor
    Patent number: 6759694
    Abstract: A phototransistor structure is disclosed. A sidewall is grown on the collector side and under the base. The surface of the sidewall is formed with a sidewall contact. When the contact is connected to an external voltage, the holes accumulated at the junction of the base and emitter can be quickly removed. This solves the problem in the prior art that using a bias between the base and the emitter to remove holes usually results in a large dark current (bias current), power consumption, and diminishing optoelectronic conversion gain.
    Type: Grant
    Filed: November 24, 2003
    Date of Patent: July 6, 2004
    Assignee: Industrial Technology Research Institute
    Inventors: Yu-Min Hsu, Jin-Wei Shi, Zing-Way Pei, Fon Yuan, Chee-Wee Liu
  • METHOD FOR UTILIZING ROUGH INSULATOR TO ENHANCE METAL-INSULATOR-SEMICONDUCTOR RELIABILITY
    Publication number: 20030162409
    Abstract: A method for utilizing a rough insulator to enhance metal-insulator-semiconductor reliability is provided. The method includes steps of: (a) providing a semiconductor substrate; (b) prebaking the semiconductor substrate under a relatively high vacuum to form a rough surface on the semiconductor substrate; and (c) growing an insulator on the semiconductor substrate to form a rough insulator and increase the metal-insulator-semiconductor reliability when the insulator is applied.
    Type: Application
    Filed: April 15, 2002
    Publication date: August 28, 2003
    Applicant: National Taiwan University
    Inventors: Chee-Wee Liu, Fon Yuan, Chung-Hsun Lin