Abstract: The present invention relates to a pharmaceutical composition comprising a weak acid drug, with the use of a bicarbonate salt to achieve a high incorporation of the drug into the liposome and a better therapeutic efficacy. Also disclosed is a method for treating a respiratory disease using the pharmaceutical composition disclosed herein.

Abstract: Disclosed herein is an AI-assisted screening method and model that capable of automatically extracting prominent intrabeat dynamic patterns associated with HFpEF from apical 4-chamber (A4C) view images. The method comprises steps of: (a) segmenting the plurality of A4C view images to produce a plurality of segmented images; (b) extracting a plurality of features from each segmented A4C view images of step (a) to produce a plurality of linear waveforms; and (c) training the plurality of linear waveforms of step (b) with the diagnosis of the subjects, thereby establishing the model. Also herein is a method for identifying and treating a subject having HFpEF by providing a medicament to the subject having HFpEF identified by the present model.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a second semiconductor layer on a first semiconductor layer. The first semiconductor layer and the second semiconductor layer have different energy bandgaps. The method further includes performing an etching process to form an opening exposing a first vertical sidewall of the first semiconductor layer and a second vertical sidewall of the second semiconductor layer. The method further includes forming an electrode structure in the opening to cover the first vertical sidewall and the second vertical sidewall.

Abstract: A method includes forming a gate stack, and etching the gate stack to form a trench penetrating through the gate stack. A dielectric isolation region underlying the gate stack is exposed to the trench, and a first portion and a second portion of the gate stack are separated by the trench. The method includes performing a first deposition process to form a first dielectric layer extending into the trench and lining sidewalls of the first portion and the second portion of the gate stack, and performing a second deposition process to form a second dielectric layer on the first dielectric layer. The second dielectric layer fills the trench. The first dielectric layer has a first dielectric constant, and the second dielectric layer has a second dielectric constant greater than the first dielectric constant.

Abstract: The present invention relates to a pharmaceutical composition comprising a weak acid drug, with the use of a bicarbonate salt to achieve a high incorporation of the drug into the liposome and a better therapeutic efficacy. Also disclosed is a method for treating a respiratory disease using the pharmaceutical composition disclosed herein.

Abstract: A high electron mobility transistor (HEMT) includes a semiconductor channel layer, a semiconductor barrier layer, a patterned semiconductor capping layer, and a patterned semiconductor protection layer disposed on a substrate in sequence. The HEMT further includes an interlayer dielectric layer and a gate electrode. The interlayer dielectric layer covers the patterned semiconductor capping layer and the patterned semiconductor protection layer, and includes a gate contact hole. The gate electrode is disposed in the gate contact hole and electrically coupled to the patterned semiconductor capping layer, where the patterned semiconductor protection layer is disposed between the gate electrode and the patterned semiconductor capping layer. The resistivity of the patterned semiconductor protection layer is between the resistivity of the patterned semiconductor capping layer and the resistivity of the interlayer dielectric layer.

Abstract: A semiconductor device and a method for forming the same are provided. The semiconductor device includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, a barrier layer on the channel layer and a gate structure on the barrier layer. The gate structure includes a gate layer, a gate electrode layer, a first protection pattern layer and second protection spacers. The gate electrode layer covers the gate layer. The first protection pattern layer covers a first top surface of the gate electrode layer. The second protection spacers cover first side surfaces of the gate electrode layer, second side surfaces of the first protection pattern layer and a portion of the gate layer. First interfaces between the second protection spacers and the gate layer are coplanar with a second interface, which is between the gate electrode layer and the gate layer.

Abstract: Improved methods for forming gate isolation structures between portions of gate electrodes and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a channel structure over a substrate; forming a first isolation structure extending in a direction parallel to the channel structure; forming a dummy gate structure over the channel structure and the first isolation structure; depositing a hard mask layer over the dummy gate structure; etching the hard mask layer to form a first opening through the hard mask layer over the first isolation structure; conformally depositing a first dielectric layer over the hard mask layer, in the first opening, and over the dummy gate structure; etching the first dielectric layer to extend the first opening and expose the dummy gate structure; and etching the dummy gate structure to extend the first opening and expose the first isolation structure.

Abstract: The present invention relates to a pharmaceutical composition containing liposomes, said liposome comprise an external lipid bilayer; and an internal aqueous medium including a weak acid drug with a half-life of less than 2 hours. Also provided is the use of the pharmaceutical composition disclosed herein to treat pulmonary hypertension with reduced dosing frequency.

Abstract: A high electron mobility transistor (HEMT) includes a semiconductor channel layer, a semiconductor barrier layer, a patterned semiconductor capping layer, and a patterned semiconductor protection layer disposed on a substrate in sequence. The HEMT further includes an interlayer dielectric layer and a gate electrode. The interlayer dielectric layer covers the patterned semiconductor capping layer and the patterned semiconductor protection layer, and includes a gate contact hole. The gate electrode is disposed in the gate contact hole and electrically coupled to the patterned semiconductor capping layer, where the patterned semiconductor protection layer is disposed between the gate electrode and the patterned semiconductor capping layer. The resistivity of the patterned semiconductor protection layer is between the resistivity of the patterned semiconductor capping layer and the resistivity of the interlayer dielectric layer.

Abstract: An illumination lamp system having automatic switching function for sterilization is disclosed. It contains a plurality of germicidal lighting lamp assemblies, a personnel counter, a data receiving indicator, and an ultraviolet indicator. Each germicidal lighting lamp assembly includes a lamp panel, an infrared human body sensor and a control module. The control module includes a power conversion unit, a synchronization interface, a startup circuit, a first microcontroller, and an output and input connection interface. Because the infrared human body sensor can detect the appearance of people in real time, with a synchronous voltage to switch emitting between illumination LED strips and ultraviolet germicidal light sources, in addition to effectively expanding the disinfection area, it can also safely adjust the type of light to achieve the automatic switching function for sterilization.

Abstract: Provided are semiconductor devices and methods for manufacturing semiconductor devices. A method deposits conformal material to form a conformal liner in the trench and modifies the conformal liner such an upper liner portion is modified more than a lower liner portion. The deposition and modifying steps are repeated while a rate of deposition of the conformal material over a non-modified surface of the conformal liner is faster than a rate of deposition of the conformal material over a modified surface of the conformal liner to form a remaining unfilled gap with a V-shape. The method further includes depositing a conformal material in the remaining unfilled gap.

Abstract: A semiconductor structure includes a ceramic substrate, a first bonding layer, a second bonding layer, a cavity, and a semiconductor layer. The ceramic substrate includes holes on its surface. The first bonding layer is disposed on the surface of the ceramic substrate, and the second bonding layer is bonded to the first bonding layer. The cavity is disposed above the hole and enclosed by the first bonding layer and the second bonding layer. The semiconductor layer extends over the cavity and is disposed along the surface of the second bonding layer.

Abstract: The present invention relates to a pharmaceutical composition containing liposomes, said liposome comprise an external lipid bilayer; and an internal aqueous medium including a weak acid drug with a half-life of less than 2 hours. Also provided is the use of the pharmaceutical composition disclosed herein to treat pulmonary hypertension with reduced dosing frequency.

Abstract: Improved methods for forming gate isolation structures between portions of gate electrodes and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a channel structure over a substrate; forming a first isolation structure extending in a direction parallel to the channel structure; forming a dummy gate structure over the channel structure and the first isolation structure; depositing a hard mask layer over the dummy gate structure; etching the hard mask layer to form a first opening through the hard mask layer over the first isolation structure; conformally depositing a first dielectric layer over the hard mask layer, in the first opening, and over the dummy gate structure; etching the first dielectric layer to extend the first opening and expose the dummy gate structure; and etching the dummy gate structure to extend the first opening and expose the first isolation structure.

Abstract: The present invention relates to a pharmaceutical composition comprising a weak acid drug, with the use of a bicarbonate salt to achieve a high incorporation of the drug into the liposome and a better therapeutic efficacy. Also disclosed is a method for treating a respiratory disease using the pharmaceutical composition disclosed herein.

Abstract: A semiconductor structure includes a ceramic substrate, a first bonding layer, a second bonding layer, a cavity, and a semiconductor layer. The ceramic substrate includes holes on its surface. The first bonding layer is disposed on the surface of the ceramic substrate, and the second bonding layer is bonded to the first bonding layer. The cavity is disposed above the hole and enclosed by the first bonding layer and the second bonding layer. The semiconductor layer extends over the cavity and is disposed along the surface of the second bonding layer.

Abstract: A paper blocking device includes a pick roller, a cover plate, a paper blocking component, a driving mechanism, a gear mechanism and a motor. The cover plate has a pick roller window penetrated the cover plate. The pick roller is positioned in the pick roller window. The paper blocking component is coupled to the cover plate. The driving mechanism has a driving shaft and a cam being connected to the driving shaft. The cam is connected to the paper blocking component. The gear mechanism is connected to the driving shaft. The motor is connected to the gear mechanism. As described above, the paper blocking device can block papers and align the leading edges of papers.

Abstract: Brushes for cleaning wafers after a Chemical Mechanical Polishing (CMP) process and methods for fabricating such brushes are provided. An exemplary method for fabricating a brush for cleaning wafers after a Chemical Mechanical Polishing (CMP) process includes forming a brush configured for contacting the wafers; and, while forming the brush, controlling formation of pores within the brush to a maximum pore dimension, wherein the maximum pore dimension is 1000 nanometers (nm).

Abstract: The present invention relates to a pharmaceutical composition comprising a weak acid drug, with the use of a bicarbonate salt to achieve a high incorporation of the drug into the liposome and a better therapeutic efficacy. Also disclosed is a method for treating a respiratory disease using the pharmaceutical composition disclosed herein.