Patents by Inventor Fonglan Ji

Fonglan Ji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Direct conversion X-ray/gamma-ray photocathode
    Patent number: 5635706
    Abstract: A direct conversion broad band x-ray/gamma-ray photocathode having at least one layer functioning as an efficient x-ray or gamma-ray absorber and another layer functioning as an efficient transmission secondary electron emitter for providing both high detection efficiency and high spatial resolution, for use in either a radiation detection environment or an image intensification environment.
    Type: Grant
    Filed: March 27, 1996
    Date of Patent: June 3, 1997
    Assignee: CSL Opto-Electronics Corporation
    Inventors: Yongzheng She, Fonglan Ji, Wei-Lou Cao, Meizhen Zhang, Yanhua Shih, Roger H. Schneider