Abstract: A system and method for a thin multi chip stack package with film on wire and copper wire. The package comprises a substrate and a first die overlying the substrate. Copper wires electrically connect the first die to the substrate. A film overlies the first die and a portion of the copper wires. In addition, the film adheres a second die to the first die. The film also electrically insulates the copper wires from the second die.

Abstract: A method for die stacking is disclosed. In one embodiment a first die is formed overlying a substrate. A first wire is bonded to the first die and to a bond finger of the substrate, wherein the first wire is bonded to the bond finger with a first bond. A first stitch bump is formed overlying the first stitch bond, wherein the first stitch bump is formed from a molten ball of conductive material. A second die is formed overlying the first die. A second wire is bonded to the second die and to the first stitch bump, wherein the second wire is bonded to the first stitch bump with a second bond.

Abstract: A method for die stacking is disclosed. In one embodiment a first die is formed overlying a substrate. A first wire is bonded to the first die and to a bond finger of the substrate, wherein the first wire is bonded to the bond finger with a first bond. A first stitch bump is formed overlying the first stitch bond, wherein the first stitch bump is formed from a molten ball of conductive material. A second die is formed overlying the first die. A second wire is bonded to the second die and to the first stitch bump, wherein the second wire is bonded to the first stitch bump with a second bond.

Abstract: A system and method for a thin multi chip stack package with film on wire and copper wire. The package comprises a substrate and a first die overlying the substrate. Copper wires electrically connect the first die to the substrate. A film overlies the first die and a portion of the copper wires. In addition, the film adheres a second die to the first die. The film also electrically insulates the copper wires from the second die.

Abstract: A method and structure for reducing the size of semiconductor package is disclosed. In one example embodiment, a method for stacking dies of a semiconductor package includes forming a set of insulated bonding wires between respective bonding pads of a first semiconductor integrated circuit die and a conductive layer electrically detached from the respective bonding pads, applying an adhesive material on a top surface of the first semiconductor integrated circuit die, and securing a second semiconductor integrated circuit die one the top surface of the first semiconductor integrated circuit die with the adhesive material.

Abstract: A method and structure for reducing the size of semiconductor package is disclosed. In one example embodiment, a method for stacking dies of a semiconductor package includes forming a set of insulated bonding wires between respective bonding pads of a first semiconductor integrated circuit die and a conductive layer electrically detached from the respective bonding pads, applying an adhesive material on a top surface of the first semiconductor integrated circuit die, and securing a second semiconductor integrated circuit die one the top surface of the first semiconductor integrated circuit die with the adhesive material.