Abstract: A plasma spray method for the manufacture of an ion conducting membrane, in particular of a hydrogen ion conducting membrane or of an oxygen ion conducting membrane is suggested. In which method the membrane is deposited as a layer (11) on a substrate (10) in a process chamber, wherein a starting material (P) is sprayed onto a surface of the substrate (10) by means of a process gas (G) in the form of a process beam (2). The starting material is injected into a plasma at a low process pressure which is at most 10000 Pa and is partially or completely melted there. In accordance with the invention the substrate (10) has pores (30) which are connected amongst one another so that the substrate (10) is gas permeable and a portion of an overall pore area of an overall area of the coating surface (31, 131) amounts to at least 30%, in particular to at least 40%.

Abstract: To apply a thermal barrier coating (10), a plasma jet (5) is generated by a plasma torch in a work chamber (2) and is directed to the surface of a substrate (3) introduced into the work chamber, and a ceramic coating material is applied to the substrate surface by means of PS-PVD, wherein the coating material is injected into the plasma jet as a powder and is partly or completely vaporized there. On applying the thermal barrier coating, in a first workstep the feed rate of the injected powder is set so that a large part of the injected powder vaporizes, wherein the coating material condenses from the vapor phase on the substrate surface and forms mixed phases with the material of the substrate surface.

Abstract: The invention relates to a plasma spray method which can serve as a starting point for a manufacture of metal nanopowder, nitride nanopowder or carbide nanopowder or metal films, nitride films or carbide films. To achieve an inexpensive manufacture of the nanopowder or of the film, in the plasma spray in accordance with the invention a starting material (P) which contains a metal or silicon oxide is introduced into a plasma jet (113) at a process pressure of at most 1000 Pa, in particular at most 400 Pa. The starting material (P) contains a metal or silicon oxide which vaporizes in the plasma jet (113) and is reduced in so doing. After the reduction, the metal or silicon which formed the metal or silicon oxide in the starting material is thus present in pure form or in almost pure form. The metal or silicon can be deposited in the form of nanopowder or of a film (124).