Abstract: A carrier substrate comprises monocrystalline silicon, and has a front face and a back face. The carrier substrate comprises: a surface region extending from the front face to a depth of between 800 nm and 2 microns, having less than 10 crystal-originated particles (COPs) (as detected by inspecting the surface using dark-field reflection microscopy); an upper region extending from the front face to a depth of between a few microns and 40 microns and having an interstitial oxygen (Oi) content less than or equal to 7.5E17 Oi/cm3 and a resistivity higher than 500 ohm·cm, and a lower region extending between the upper region and the back face and having a micro-defect (BMD) concentration greater than or equal to 1E8/cm3. A method is used to manufacture such a carrier substrate.