Patents by Inventor Frédéric Drillet

Frédéric Drillet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230361102
    Abstract: A semiconductor structure includes a semiconductor wafer having one or more semiconductor devices and an inductor attached to an upper surface of said semiconductor wafer. The semiconductor structure further includes a redistribution layer electrically connecting the inductor to at least one of said one or more semiconductor devices.
    Type: Application
    Filed: May 3, 2023
    Publication date: November 9, 2023
    Inventors: Frederic DRILLET, Imene LAHBIB, Gregory U'REN
  • Patent number: 11610916
    Abstract: A semiconductor structure for RF applications comprises: a first ?TP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.
    Type: Grant
    Filed: May 5, 2020
    Date of Patent: March 21, 2023
    Assignee: X-FAB France SAS
    Inventors: Imène Lahbib, Jérôme Loraine, Frédéric Drillet, Albert Kumar, Gregory U'ren
  • Publication number: 20220415927
    Abstract: A semiconductor structure for RF applications comprises: a first ?TP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.
    Type: Application
    Filed: August 24, 2022
    Publication date: December 29, 2022
    Inventors: Imène Lahbib, Jérôme Loraine, Frédéric Drillet, Albert Kumar, Gregory U'ren
  • Publication number: 20210273085
    Abstract: A semiconductor structure for RF applications comprises: a target substrate; a micro-transfer printed (?TP) gallium nitride (GaN) chiplet on said target substrate, wherein said chiplet comprises a GaN device and a dummy metal layer.
    Type: Application
    Filed: February 26, 2021
    Publication date: September 2, 2021
    Inventors: Jérôme Loraine, Imène Lahbib, Frédéric Drillet, Brice Grandchamp, Lucas logna-Prat, Gregory U'ren
  • Publication number: 20200365619
    Abstract: A semiconductor structure for RF applications comprises: a first ?TP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.
    Type: Application
    Filed: May 5, 2020
    Publication date: November 19, 2020
    Inventors: Imène Lahbib, Jérôme Loraine, Frédéric Drillet, Albert Kumar, Gregory U'ren