Patents by Inventor Frédéric Dupont
Frédéric Dupont has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9011598Abstract: The present invention provides methods for fabricating a composite substrate including a supporting substrate and a layer of a binary or ternary material having a crystal form that is non-cubic and semi-polar or non-polar. The methods comprise transferring the layer of a binary or ternary material from a donor substrate to a receiving substrate.Type: GrantFiled: September 28, 2006Date of Patent: April 21, 2015Assignee: SoitecInventors: Alice Boussagol, Frédéric Dupont, Bruce Faure
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Patent number: 8785293Abstract: The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A1, of nominal lattice parameter An and of thermal expansion coefficient CTE3, a low-viscosity layer and an intermediate substrate of thermal expansion coefficient CTE1; b) a heat treatment is applied so as to relax the seed layer of strained material; and c) the seed layer is transferred onto a support substrate of thermal expansion coefficient CTE5, the intermediate substrate and the support substrate being chosen so that A1<An and CTE1?CTE3 and CTE5>CTE1 or A1>An and CTE1?CTE3 and CTE5<CTE1.Type: GrantFiled: February 15, 2010Date of Patent: July 22, 2014Assignee: SOITECInventors: Pascal Guenard, Frederic Dupont
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Patent number: 8581229Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive non-III-nitride material is disposed in direct contact with the n-type region. A total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is less than one micron.Type: GrantFiled: November 23, 2009Date of Patent: November 12, 2013Assignees: Koninklijke Philips N.V., Philips Lumileds Lighting Company, LLCInventors: Frederic Dupont, John E. Epler
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Patent number: 8310266Abstract: A device for characterizing the electro-optical performance of a semiconductor component includes a chamber containing a controlled atmosphere; a measuring head equipped with conductive probes for contacting the electrical interfaces of said component and connected to a data processing system in order to determine said electro-optical performance; and a staging fixture support to accommodate said component(s), the staging fixture being capable of being cooled and being moved in an upward and downward translational movement to bring the electrical interfaces of said component(s) into contact with the tip of the measuring probes of the measuring head. The staging fixture has bumps and the components are positioned in contact with these and the staging fixture accommodates, in the area of each of these bumps, two positioning grids which are capable of sliding relative to each other and cooperating with each other to define pockets suitable for accommodating the component(s) to be characterized.Type: GrantFiled: March 23, 2010Date of Patent: November 13, 2012Assignee: Societe Francaise de Detecteurs Infrarouges-SofradirInventors: Yves Daultier, Frédéric Dupont
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Publication number: 20110294245Abstract: The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A1, of nominal lattice parameter An and of thermal expansion coefficient CTE3, a low-viscosity layer and an intermediate substrate of thermal expansion coefficient CTE1; b) a heat treatment is applied so as to relax the seed layer of strained material; and c) the seed layer is transferred onto a support substrate of thermal expansion coefficient CTE5, the intermediate substrate and the support substrate being chosen so that A1<An and CTE1?CTE3 and CTE5>CTE1 or A1>An and CTE1?CTE3 and CTE5<CTE1.Type: ApplicationFiled: February 15, 2010Publication date: December 1, 2011Applicant: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIESInventors: Pascal Guenard, Frederic Dupont
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Patent number: 7968909Abstract: Reconditioned donor substrates that include a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and an additional layer deposited upon the opposite surface of the remainder substrate to increase its thickness and to form the reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers and is typically made from gallium nitride donor substrates.Type: GrantFiled: November 4, 2010Date of Patent: June 28, 2011Assignee: S.O.I.Tec Silicon on Insulator TechnologiesInventor: Frederic Dupont
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Publication number: 20110121332Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive non-III-nitride material is disposed in direct contact with the n-type region. A total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is less than one micron.Type: ApplicationFiled: November 23, 2009Publication date: May 26, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Frédéric DUPONT, John E. EPLER
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Publication number: 20110049528Abstract: Reconditioned donor substrates that include a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and an additional layer deposited upon the opposite surface of the remainder substrate to increase its thickness and to form the reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers and is typically made from gallium nitride donor substrates.Type: ApplicationFiled: November 4, 2010Publication date: March 3, 2011Inventor: Frederic Dupont
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Patent number: 7851330Abstract: Methods are disclosed for preparing a reconditioned donor substrate by providing a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and depositing an additional layer onto the opposite surface of the remainder substrate to increase its thickness and to form a reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers.Type: GrantFiled: March 31, 2009Date of Patent: December 14, 2010Assignee: S.O.I.Tec Silicon on Insulator TechnologiesInventor: Frederic Dupont
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Publication number: 20100259291Abstract: A device for characterizing the electro-optical performance of a semiconductor component includes a chamber containing a controlled atmosphere; a measuring head equipped with conductive probes for contacting the electrical interfaces of said component and connected to a data processing system in order to determine said electro-optical performance; and a staging fixture support to accommodate said component(s), the staging fixture being capable of being cooled and being moved in an upward and downward translational movement to bring the electrical interfaces of said component(s) into contact with the tip of the measuring probes of the measuring head. The staging fixture has bumps and the components are positioned in contact with these and the staging fixture accommodates, in the area of each of these bumps, two positioning grids which are capable of sliding relative to each other and cooperating with each other to define pockets suitable for accommodating the component(s) to be characterized.Type: ApplicationFiled: March 23, 2010Publication date: October 14, 2010Applicant: Societe Francaise De Detecteurs Infrarouges-SofradirInventors: Yves Daultier, Frédéric Dupont
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Patent number: 7695996Abstract: A method of manufacturing a photodetecting device, by providing a first wafer that includes a photosensitive layer made of a semiconductor material and a second wafer that includes a circuit layer of electronic components, with one of the photosensitive layer or the circuit layer incorporating a field isolation layer; bonding the first and second wafers to form a structure comprising successively the circuit layer, the field isolation layer and the photosensitive layer; and forming electrically conductive vias to electrically connect the photosensitive layer to at least some of the electronic components of the circuit layer. Also, photodetecting devices prepared by these methods.Type: GrantFiled: July 31, 2008Date of Patent: April 13, 2010Assignee: S.O.I. Tec Silicon on Insulator TechnologiesInventors: Frédéric Dupont, Ian Cayrefourcq
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Publication number: 20090191719Abstract: Methods are disclosed for preparing a reconditioned donor substrate by providing a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and depositing an additional layer onto the opposite surface of the remainder substrate to increase its thickness and to form a reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers.Type: ApplicationFiled: March 31, 2009Publication date: July 30, 2009Inventor: Frederic Dupont
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Patent number: 7531428Abstract: Methods for fabricating compound material wafers are described. An embodiment of the method includes providing a donor substrate having a surface, forming a weakened zone in the donor substrate to define a transfer layer that includes the donor substrate surface, bonding the surface of the transfer layer to a handle substrate, and detaching the donor substrate at the weakened zone to transfer the transfer layer onto the handle substrate. Consequently, a compound material wafer is formed, and the transfer layer detached donor wafer provides a remainder substrate having a surface where the transfer layer was detached. Next, an additional layer is deposited onto a surface of the remainder substrate to increase its thickness and to form a reconditioned substrate, and the reconditioned substrate is recycled as a donor substrate for fabricating additional compound material wafers.Type: GrantFiled: March 18, 2005Date of Patent: May 12, 2009Assignee: S.O.I.Tec Silicon on Insulator TechnologiesInventor: Frederic Dupont
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Publication number: 20080303113Abstract: A method of manufacturing a photodetecting device, by providing a first wafer that includes a photosensitive layer made of a semiconductor material and a second wafer that includes a circuit layer of electronic components, with one of the photosensitive layer or the circuit layer incorporating a field isolation layer; bonding the first and second wafers to form a structure comprising successively the circuit layer, the field isolation layer and the photosensitive layer; and forming electrically conductive vias to electrically connect the photosensitive layer to at least some of the electronic components of the circuit layer. Also, photodetecting devices prepared by these methods.Type: ApplicationFiled: July 31, 2008Publication date: December 11, 2008Inventors: Frederic Dupont, Ian Cayrefourcq
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Patent number: 7452745Abstract: A method of manufacturing a photodetecting device, by providing a first wafer that includes a photosensitive layer made of a semiconductor material and a second wafer that includes a circuit layer of electronic components, with one of the photosensitive layer or the circuit layer incorporating a field isolation layer; bonding the first and second wafers to form a structure comprising successively the circuit layer, the field isolation layer and the photosensitive layer; and forming electrically conductive vias to electrically connect the photosensitive layer to at least some of the electronic components of the circuit layer. Also, photodetecting devices prepared by these methods.Type: GrantFiled: August 24, 2006Date of Patent: November 18, 2008Assignee: S.O.I.Tec Silicon on Insulator TechnologiesInventors: Frédéric Dupont, Ian Cayrefourcq
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Patent number: 7232743Abstract: A method for fabricating a semiconductor structure having a high-strained crystalline layer with a low crystal defect density is disclosed. The structure includes a substrate having a first material comprising germanium or a Group(III)-Group(V)-semiconductor or alloy thereof. In addition, a crystalline epitaxial first layer, comprising a graded buffer layer and a substantially relaxed layer, is provided. The buffer layer is sufficiently relaxed to provide relaxation of the substantially relaxed layer deposited thereon. A further layer may be provided on the first layer, and the transfer of at least the further layer is facilitated by providing a weakened zone in the first layer.Type: GrantFiled: November 17, 2005Date of Patent: June 19, 2007Assignee: S.O.I.Tec Silicon on Insulator Technologies S.A.Inventors: Cécile Aulnette, Frédéric Dupont, Carlos Mazuré
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Publication number: 20070022940Abstract: The present invention provides methods for fabricating a composite substrate including a supporting substrate and a layer of a binary or ternary material having a crystal form that is non-cubic and semi-polar or non-polar. The methods comprise transferring the layer of a binary or ternary material from a donor substrate to a receiving substrate.Type: ApplicationFiled: September 28, 2006Publication date: February 1, 2007Inventors: Alice Boussagol, Frederic Dupont, Bruce Faure
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Publication number: 20070018266Abstract: A method of manufacturing a photodetecting device, by providing a first wafer that includes a photosensitive layer made of a semiconductor material and a second wafer that includes a circuit layer of electronic components, with one of the photosensitive layer or the circuit layer incorporating a field isolation layer; bonding the first and second wafers to form a structure comprising successively the circuit layer, the field isolation layer and the photosensitive layer; and forming electrically conductive vias to electrically connect the photosensitive layer to at least some of the electronic components of the circuit layer. Also, photodetecting devices prepared by these methods.Type: ApplicationFiled: August 24, 2006Publication date: January 25, 2007Inventors: Frederic Dupont, Ian Cayrefourcq
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Publication number: 20060099776Abstract: Methods for fabricating compound material wafers are described. An embodiment of the method includes providing a donor substrate having a surface, forming a weakened zone in the donor substrate to define a transfer layer that includes the donor substrate surface, bonding the surface of the transfer layer to a handle substrate, and detaching the donor substrate at the weakened zone to transfer the transfer layer onto the handle substrate. Consequently, a compound material wafer is formed, and the transfer layer detached donor wafer provides a remainder substrate having a surface where the transfer layer was detached. Next, an additional layer is deposited onto a surface of the remainder substrate to increase its thickness and to form a reconditioned substrate, and the reconditioned substrate is recycled as a donor substrate for fabricating additional compound material wafers.Type: ApplicationFiled: March 18, 2005Publication date: May 11, 2006Inventor: Frederic Dupont
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Publication number: 20060088979Abstract: A method for fabricating a semiconductor structure having a high-strained crystalline layer with a low crystal defect density is disclosed. The structure includes a substrate having a first material comprising germanium or a Group(III)-Group(V)-semiconductor or alloy thereof. In addition, a crystalline epitaxial first layer, comprising a graded buffer layer and a substantially relaxed layer, is provided. The buffer layer is sufficiently relaxed to provide relaxation of the substantially relaxed layer deposited thereon. A further layer may be provided on the first layer, and the transfer of at least the further layer is facilitated by providing a weakened zone in the first layer.Type: ApplicationFiled: November 17, 2005Publication date: April 27, 2006Inventors: Cecile Aulnette, Frederic Dupont, Carlos Mazure