Patents by Inventor Frédéric Gautier
Frédéric Gautier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240113704Abstract: A method for controlling a MOS transistor compares a first voltage between a drain and a source of the MOS transistor to a second controllable threshold voltage. When the first voltage is smaller than a third voltage, a fourth control voltage is applied to the MOS transistor that is greater than a fifth threshold voltage of the MOS transistor. When the first voltage is greater than the second voltage, the fourth control voltage applied to the MOS transistor is smaller than the fifth voltage. The second voltage is equal to a first constant value between a first time and a second time, and is equal to a second variable value between the second time and a third time. The second value is equal to a sum of the first voltage and a sixth positive voltage. The third time corresponds to a time when the first voltage inverts.Type: ApplicationFiled: September 22, 2023Publication date: April 4, 2024Applicant: STMicroelectronics (Tours) SASInventors: Diawoye CISSE, Bertrand RIVET, Frederic GAUTIER
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Patent number: 11869959Abstract: A device includes a controllable current source connected between a first node and a first terminal coupled to a cathode of a controllable diode. A capacitor is connected between the first node and a second terminal coupled to an anode of the controllable diode. A first switch is connected between the first node and a third terminal coupled to a gate of the controllable diode. A second switch is connected between the second and third terminals. A first diode is connected between the third terminal and the second terminal, an anode of the first diode being preferably coupled to the third terminal.Type: GrantFiled: August 26, 2021Date of Patent: January 9, 2024Assignee: STMicroelectronics (Tours) SASInventor: Frederic Gautier
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Publication number: 20230275526Abstract: A rectifying element includes a MOS transistor series-connected with a Schottky diode. A bias voltage is applied between the control terminal of the MOS transistor and the terminal of the Schottky diode opposite to the transistor. A pair of the rectifying elements are substituted for diodes of a rectifying bridge circuit. Alternatively, the control terminal bias is supplied from a cross-coupling against the Schottky diodes. In another implementation, the Schottky diodes are omitted and the bias voltage applied to control terminals of the MOS transistors is switched in response to cross-coupled divided source-drain voltages of the MOS transistors. The circuits form components of a power converter.Type: ApplicationFiled: May 8, 2023Publication date: August 31, 2023Applicant: STMicroelectronics (Tours) SASInventor: Frederic GAUTIER
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Patent number: 11682981Abstract: A rectifying element includes a MOS transistor series-connected with a Schottky diode. A bias voltage is applied between the control terminal of the MOS transistor and the terminal of the Schottky diode opposite to the transistor. A pair of the rectifying elements are substituted for diodes of a rectifying bridge circuit. Alternatively, the control terminal bias is supplied from a cross-coupling against the Schottky diodes. In another implementation, the Schottky diodes are omitted and the bias voltage applied to control terminals of the MOS transistors is switched in response to cross-coupled divided source-drain voltages of the MOS transistors. The circuits form components of a power converter.Type: GrantFiled: February 18, 2020Date of Patent: June 20, 2023Assignee: STMicroelectronics (Tours) SASInventor: Frederic Gautier
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Publication number: 20220069110Abstract: A device includes a controllable current source connected between a first node and a first terminal coupled to a cathode of a controllable diode. A capacitor is connected between the first node and a second terminal coupled to an anode of the controllable diode. A first switch is connected between the first node and a third terminal coupled to a gate of the controllable diode. A second switch is connected between the second and third terminals. A first diode is connected between the third terminal and the second terminal, an anode of the first diode being preferably coupled to the third terminal.Type: ApplicationFiled: August 26, 2021Publication date: March 3, 2022Applicant: STMicroelectronics (Tours) SASInventor: Frederic GAUTIER
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Publication number: 20200186052Abstract: A rectifying element includes a MOS transistor series-connected with a Schottky diode. A bias voltage is applied between the control terminal of the MOS transistor and the terminal of the Schottky diode opposite to the transistor. A pair of the rectifying elements are substituted for diodes of a rectifying bridge circuit. Alternatively, the control terminal bias is supplied from a cross-coupling against the Schottky diodes. In another implementation, the Schottky diodes are omitted and the bias voltage applied to control terminals of the MOS transistors is switched in response to cross-coupled divided source-drain voltages of the MOS transistors. The circuits form components of a power converter.Type: ApplicationFiled: February 18, 2020Publication date: June 11, 2020Applicant: STMicroelectronics (Tours) SASInventor: Frederic GAUTIER
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Patent number: 10608551Abstract: A rectifying element includes a MOS transistor series-connected with a Schottky diode. A bias voltage is applied between the control terminal of the MOS transistor and the terminal of the Schottky diode opposite to the transistor. A pair of the rectifying elements are substituted for diodes of a rectifying bridge circuit. Alternatively, the control terminal bias is supplied from a cross-coupling against the Schottky diodes. In another implementation, the Schottky diodes are omitted and the bias voltage applied to control terminals of the MOS transistors is switched in response to cross-coupled divided source-drain voltages of the MOS transistors. The circuits form components of a power converter.Type: GrantFiled: August 1, 2018Date of Patent: March 31, 2020Assignee: STMicroelectronics (Tours) SASInventor: Frederic Gautier
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Publication number: 20190044454Abstract: A rectifying element includes a MOS transistor series-connected with a Schottky diode. A bias voltage is applied between the control terminal of the MOS transistor and the terminal of the Schottky diode opposite to the transistor. A pair of the rectifying elements are substituted for diodes of a rectifying bridge circuit. Alternatively, the control terminal bias is supplied from a cross-coupling against the Schottky diodes. In another implementation, the Schottky diodes are omitted and the bias voltage applied to control terminals of the MOS transistors is switched in response to cross-coupled divided source-drain voltages of the MOS transistors. The circuits form components of a power converter.Type: ApplicationFiled: August 1, 2018Publication date: February 7, 2019Applicant: STMicroelectronics (Tours) SASInventor: Frederic GAUTIER
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Patent number: 9773625Abstract: Device for protecting an electrical circuit fed by an alternating current, comprising a housing and a fuse element disposed in the housing. The housing comprises a first portion and a second portion which are mobile in relation to one another, and elastic means suitable for causing the first portion to bear against the second portion and causing the housing to be set in a closed state.Type: GrantFiled: November 7, 2012Date of Patent: September 26, 2017Assignee: ECEInventors: Frederic Gautier, David Balaine
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Patent number: 9118260Abstract: A method for controlling at least one switch in a power converter, wherein the switching speed of the switch dynamically varies according to a measurement of a quantity representative of the efficiency of the converter.Type: GrantFiled: September 14, 2012Date of Patent: August 25, 2015Assignee: STMicroelectronics (Tours) SASInventors: Frédéric Gautier, Bertrand Rivet
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Publication number: 20130107595Abstract: A method for controlling at least one switch in a power converter, wherein the switching speed of the switch dynamically varies according to a measurement of a quantity representative of the efficiency of the converter.Type: ApplicationFiled: September 14, 2012Publication date: May 2, 2013Applicant: STMICROELECTRONICS (TOURS) SASInventors: Frédéric Gautier, Bertrand Rivet
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Patent number: 8339388Abstract: A method and a circuit for controlling a power recovery stage of a plasma display panel including a resonant circuit of at least one inductive element and one capacitive element, wherein the capacitive element is precharged to half a supply voltage of the display panel.Type: GrantFiled: November 17, 2006Date of Patent: December 25, 2012Assignee: STMicroelectronics S.A.Inventors: Bertrand Rivet, Frédéric Gautier, Benoit Peron
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Publication number: 20090141014Abstract: A method and a circuit for controlling a power recovery stage of a plasma display panel including a resonant circuit of at least one inductive element and one capacitive element, wherein the capacitive element is precharged to half a supply voltage of the display panel.Type: ApplicationFiled: November 17, 2006Publication date: June 4, 2009Applicant: STMicroelectronics S.A.Inventors: Bertrand Rivet, Frederic Gautier, Benoit Peron
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Publication number: 20080247197Abstract: A one-way dipolar component with overcurrent protection including, in parallel, a first one-way dipolar component with a positive temperature coefficient; and a second one-way dipolar component having the same biasing as the first one-way dipolar component having a conduction threshold voltage greater than the conduction threshold voltage at ambient temperature of the first one-way dipolar component, the second component comprising a silicon diode in series with a component of a zener diode type.Type: ApplicationFiled: April 4, 2008Publication date: October 9, 2008Applicant: STMicroelectronics S.A.Inventors: Bertrand Rivet, Frederic Gautier
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Patent number: 7072197Abstract: An isolated circuit of low-voltage supply of a control circuit of a high-voltage load, in or upstream of a fullwave three-phase rectifying bridge, comprising a first low-voltage capacitor having a first electrode connected to one of the rectified output terminals of the bridge, and at least one second capacitor providing said low voltage, a first electrode of the second capacitor being connected to one of the A.C. input terminals of the bridge, the respective second electrodes of the capacitors being connected by a high-voltage diode having its cathode connected to the second capacitor.Type: GrantFiled: December 29, 2003Date of Patent: July 4, 2006Assignee: STMicroelectronics S.A.Inventors: Benoît Peron, Frédéric Gautier
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Publication number: 20040141344Abstract: An isolated circuit of low-voltage supply of a control circuit of a high-voltage load, in or upstream of a fullwave three-phase rectifying bridge, comprising a first low-voltage capacitor having a first electrode connected to one of the rectified output terminals of the bridge, and at least one second capacitor providing said low voltage, a first electrode of the second capacitor being connected to one of the A.C. input terminals of the bridge, the respective second electrodes of the capacitors being connected by a high-voltage diode having its cathode connected to the second capacitor.Type: ApplicationFiled: December 29, 2003Publication date: July 22, 2004Applicant: STMicroelectronics S.A.Inventors: Benoit Peron, Frederic Gautier