Patents by Inventor Frédéric Mazen
Frédéric Mazen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9761607Abstract: A method for producing a microelectronic device is provided, including forming on an insulating layer of a semi-conductor on insulator type substrate, a first semi-conductor block covered with a first strain zone configured to induce a compressive strain in the first block and a second semi-conductor block covered with a second strain zone configured to induce a tensile strain in the second block, the first block and the second block each being formed of a lower region based on amorphous semi-conductor material, covered with an upper region of crystalline semi-conductor material in contact with one of the strain zones; and recrystallizing the lower region of the first and second blocks while using the upper region of crystalline material as starting zone for a recrystallization front.Type: GrantFiled: December 22, 2014Date of Patent: September 12, 2017Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Shay Reboh, Perrine Batude, Sylvain Maitrejean, Frederic Mazen
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Patent number: 9698289Abstract: A method for detaching a self-supporting layer of silicon of crystalline orientation <100>, particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation <100> so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30° C./s so as to detach the self-supporting layer of silicon.Type: GrantFiled: July 1, 2013Date of Patent: July 4, 2017Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Carole Braley, Frédéric Mazen
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Patent number: 9589830Abstract: A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.Type: GrantFiled: April 14, 2015Date of Patent: March 7, 2017Assignees: Soitec, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Didier Landru, Oleg Kononchuk, Nadia Ben Mohamed, Damien Massy, Frederic Mazen, Francois Rieutord
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Publication number: 20160300927Abstract: Method including the steps consisting in: forming source and drain semiconductor blocks comprising a first layer based on a first crystalline semiconductor material surmounted by a second layer (16) based on a second crystalline semiconductor material different from the first semiconductor material, making amorphous and selectively doping the second layer (16) by means of one or more implantation(s), carrying out a recrystallisation of the second layer and an activation of dopants by means of at least one thermal annealing.Type: ApplicationFiled: April 6, 2016Publication date: October 13, 2016Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Shay REBOH, Perrine BATUDE, Frederic MAZEN, Benoit SKLENARD
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Patent number: 9427948Abstract: A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 107 GPa·?m3, securing the first and second thin films to the first and second faces of the flexible substrate respectively so as to form a stack including the flexible structure delimited by the first and second embrittlement regions, the flexible structure having a stiffening effect suitable for allowing transfers of the first and second thin films, and applying a thermal budget so as to transfer the first and second thin films onto the flexible substrate.Type: GrantFiled: December 18, 2012Date of Patent: August 30, 2016Assignee: COMMISSARIATE A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Hubert Moriceau, Maxime Argoud, Frank Fournel, Frederic Mazen, Christophe Morales
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Patent number: 9343375Abstract: Method of manufacturing a transistor on a layer made of a first crystalline semiconducting material to make a channel, deposited on a dielectric layer, the method including the following steps: epitaxial growth of zones made of a second semiconducting material on the layer made of a first crystalline semiconducting material, so as to form source and drain blocks with the layer made of a first crystalline semiconducting material on each side of the channel, the second semiconducting material having a lattice parameter different from that of the first semiconducting material, in-depth amorphization of part of zones made of a second semiconducting material so as to keep only one layer of second crystalline semiconducting material on the surface of the source and drain blocks, and amorphization of zones of the layer made of a first semiconducting material located under zones made of a second semiconducting material, recrystallization of the source and drain blocks such that the second semiconducting material iType: GrantFiled: July 17, 2015Date of Patent: May 17, 2016Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Perrine Batude, Frederic Mazen, Shay Reboh, Benoit Sklenard
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Patent number: 9246006Abstract: A method for manufacturing a transistor is provided, including amorphization and doping, by one or more localized implantations, of given regions of source and drain blocks based on crystalline semi-conductor material disposed on an insulating layer of a semi-conductor on insulator substrate, the implantations being carried out so as to conserve at a surface of said blocks zones of crystalline semi-conductor material on regions of amorphous semi-conductor material; and recrystallization of at least one portion of said given regions.Type: GrantFiled: August 7, 2014Date of Patent: January 26, 2016Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, STMICROELECTRONICS SAInventors: Perrine Batude, Frederic Mazen, Benoit Sklenard, Shay Reboh
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Publication number: 20160020153Abstract: Method of manufacturing a transistor on a layer made of a first crystalline semiconducting material to make a channel, deposited on a dielectric layer, the method including the following steps: epitaxial growth of zones made of a second semiconducting material on the layer made of a first crystalline semiconducting material, so as to form source and drain blocks with the layer made of a first crystalline semiconducting material on each side of the channel, the second semiconducting material having a lattice parameter different from that of the first semiconducting material, in-depth amorphisation of part of zones made of a second semiconducting material so as to keep only one layer of second crystalline semiconducting material on the surface of the source and drain blocks, and amorphisation of zones of the layer made of a first semiconducting material located under zones made of a second semiconducting material, recrystallisation of the source and drain blocks such that the second semiconducting material iType: ApplicationFiled: July 17, 2015Publication date: January 21, 2016Applicant: Commissariat a L'Energie Atomique et aux Energies AlternativesInventors: Perrine BATUDE, Frederic MAZEN, Shay REBOH, Benoit SKLENARD
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Patent number: 9201023Abstract: This system for measuring the propagation of a zone of separation between a first portion and a second portion of at least one substrate includes: a module for emitting at least two incident beams each of which illuminates a separate point on the substrate, the at least two incident beams being able to pass through the first portion and the zone of separation and meet the second portion in such a way that each of them generates at least one first emergent beam Fe originating from the interface between the first portion and the zone of separation, and at least one second emergent beam originating from the interface between the zone of separation and the second portion; a detecting module for detecting light intensity values resulting from interference between the first and second emergent beams; and a computer for determining the conditions of the propagation of the zone of separation.Type: GrantFiled: March 12, 2013Date of Patent: December 1, 2015Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Frédéric Mazen, François Rieutord, Jean-Daniel Penot, Philippe Montmayeul
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Publication number: 20150303098Abstract: A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.Type: ApplicationFiled: April 14, 2015Publication date: October 22, 2015Inventors: Didier Landru, Oleg Kononchuk, Nadia Ben Mohamed, Damien Massy, Frederic Mazen, Francois Rieutord
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Patent number: 9105688Abstract: A process for forming a layer (26) of semiconductor material from a substrate (20), or donor substrate, made of the same semiconductor material is described, comprising: formation in said donor substrate of a high lithium concentration zone (22), with a concentration between 5×1018 atoms/cm3 and 5×1020 atoms/cm3, then a hydrogen implantation (24) in the donor substrate, in, or in the vicinity of, the high lithium concentration zone, application of a stiffener (19) with the donor substrate, application of a thermal budget to result in the detachment of the layer (34) defined by the implantation.Type: GrantFiled: April 27, 2012Date of Patent: August 11, 2015Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Aurelie Tauzin, Frederic Mazen
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Publication number: 20150194550Abstract: A method for detaching a self-supporting layer of silicon of crystalline orientation <100>, particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation <100> so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30° C./s so as to detach the self-supporting layer of silicon.Type: ApplicationFiled: July 1, 2013Publication date: July 9, 2015Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Carole Braley, Frédéric Mazen
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Publication number: 20150179665Abstract: Method for producing a microelectronic device comprising: a) the formation on an insulating layer of a semi-conductor on insulator type substrate, a first semi-conductor block covered with a first strain zone adapted to induce a compressive strain in said first block and a second semi-conductor block covered with a second strain zone adapted to induce a tensile strain in said second block, the first block and the second block each being formed of a lower region based on amorphous semi-conductor material, covered with an upper region of crystalline semi-conductor material in contact with one of said strain zones, b) the re-crystallization of said lower region of said first block and of said second block while using said upper region of crystalline material as starting zone for a recrystallization front.Type: ApplicationFiled: December 22, 2014Publication date: June 25, 2015Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Shay REBOH, Perrine BATUDE, Sylvain MAITREJEAN, Frederic MAZEN
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Publication number: 20150055122Abstract: This system for measuring the propagation of a zone of separation between a first portion and a second portion of at least one substrate includes: a module for emitting at least two incident beams each of which illuminates a separate point on the substrate, the at least two incident beams being able to pass through the first portion and the zone of separation and meet the second portion in such a way that each of them generates at least one first emergent beam Fe originating from the interface between the first portion and the zone of separation, and at least one second emergent beam originating from the interface between the zone of separation and the second portion; a detecting module for detecting light intensity values resulting from interference between the first and second emergent beams; and a computer for determining the conditions of the propagation of the zone of separation.Type: ApplicationFiled: March 12, 2013Publication date: February 26, 2015Inventors: Frèdèric MAZEN, François RIEUTORD, Jean-Daniel PENOT, Philippe MONTMAYEUL
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Publication number: 20150044828Abstract: A Method for manufacturing a transistor comprising: a) amorphization and doping, by means of one or more localised implantation(s), of given regions of source and drain blocks based on crystalline semi-conductor material lying on an insulating layer of a semi-conductor on insulator substrate, the implantation(s) being carried out so as to conserve at the surface of said blocks zones of crystalline semi-conductor material on the regions of amorphous semi-conductor material, b) recrystallization of at least one portion of said given regions.Type: ApplicationFiled: August 7, 2014Publication date: February 12, 2015Applicants: COMMISARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT, STMICROELECTRONICS SAInventors: Perrine BATUDE, Frederic Mazen, Benoit Sklenard
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Patent number: 8778775Abstract: A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone.Type: GrantFiled: December 18, 2007Date of Patent: July 15, 2014Assignee: Commissariat a l'Energie AtomiqueInventors: Aurélie Tauzin, Jérôme Dechamp, Frédéric Mazen, Florence Madeira
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Publication number: 20140113434Abstract: A process for forming a layer (26) of semiconductor material from a substrate (20), or donor substrate, made of the same semiconductor material is described, comprising: formation in said donor substrate of a high lithium concentration zone (22), with a concentration between 5×1018 atoms/cm3 and 5×1020 atoms/cm3, then a hydrogen implantation (24) in the donor substrate, in, or in the vicinity of, the high lithium concentration zone, application of a stiffener (19) with the donor substrate, application of a thermal budget to result in the detachment of the layer (34) defined by the implantation.Type: ApplicationFiled: April 27, 2012Publication date: April 24, 2014Applicant: Commissariat a l'energie atomique et aux ene altInventors: Aurelie Tauzin, Frederic Mazen
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Patent number: 8293620Abstract: A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.Type: GrantFiled: July 7, 2009Date of Patent: October 23, 2012Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, S.O.I. TEC Silicon On Insulator TechnologiesInventors: Thomas Signamarcheix, Chrystel Deguet, Frederic Mazen
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Publication number: 20110129988Abstract: A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.Type: ApplicationFiled: July 7, 2009Publication date: June 2, 2011Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT, S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIESInventors: Thomas Signamarcheix, Chrystel Deguet, Frederic Mazen
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Patent number: 7943402Abstract: A method of characterizing an ion implantation process, the method including a first step of producing a PN junction degraded by the ion implantation of species, the species implantation being obtained by the ion implantation process to be characterized; a second step of measuring a parameter representative of an electrical conduction of the degraded PN junction and a dispersion of the parameter on a surface on which the degraded PN junction is produced, the parameter and the dispersion forming a reference parameter and a reference dispersion, the first and second steps being repeated in time so as to follow the evolution of the parameter representative of electrical conduction with relation to the reference parameter and the dispersion of the representative parameter with relation to the reference dispersion.Type: GrantFiled: February 4, 2010Date of Patent: May 17, 2011Assignee: Commissariat a l'Energie AtomiqueInventors: Frédéric Milesi, Frédéric Mazen