Abstract: A method for selectively filling, with a filling liquid, a first cavity from among a plurality of cavities, each cavity opening out at a front face of a substrate. The method includes a processing step for altering the surface energy of the first internal surface of the first cavity or the surface energy of the second internal surfaces of the other cavities, such that the first surface has a first surface energy and the second surfaces have a second surface energy and a step including a sequence for spreading the filling liquid, the first energy and the second energy being adjusted such that the first and the second surfaces exert an attracting effect and a repelling effect, respectively, on the liquid.

Abstract: A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.

Abstract: The invention relates to a method for manufacturing a photovoltaic module comprising a plurality of solar cells in a thin-layer structure, in which the following are consecutively formed: an electrode on the rear surface (41), a photovoltaic layer (46) obtained by depositing a layer (42) of precursors and by annealing such as to convert the precursors into a semiconductor material, and another semiconductor layer (43) in order to create a pn junction with the photovoltaic layer (46); characterized in that the layer (42) is deposited in a localized manner, such as to leave free at least one area (410) of the electrode on the rear surface (41) placed between two adjacent cells, wherein the annealing step modifies said area (410) which has higher resistivity than the rest of the electrode on the rear surface (41), such as to provide electric insulation between two adjacent cells.

Abstract: The invention relates to a photovoltaic module comprising a plurality of photovoltaic cells in a structure made up of thin films, comprising the following steps: a step of producing an intermediate product by depositing on the entirety of a substrate a layer of a conductive material, forming an absorbing layer on this layer of a conductive material, and producing holes through the stack formed by the layer of a conductive material and the absorbing layer, the layer of a conductive material forming the backside electrode; a step of depositing a transparent insulating material in the holes of the intermediate product, the absorbing layer being devoid of this material; and a step of depositing a layer forming the front side electrode, on the entirety of the product obtained.

Abstract: A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.

Abstract: The invention relates to a method for manufacturing a photovoltaic module comprising a plurality of solar cells in a thin-layer structure, in which the following are consecutively formed: an electrode on the rear surface (41), a photovoltaic layer (46) obtained by depositing a layer (42) of precursors and by annealing such as to convert the precursors into a semiconductor material, and another semiconductor layer (43) in order to create a pn junction with the photovoltaic layer (46); characterised in that the layer (42) is deposited in a localised manner, such as to leave free at least one area (410) of the electrode on the rear surface (41) placed between two adjacent cells, wherein the annealing step modifies said area (410) which has higher resistivity than the rest of the electrode on the rear surface (41), such as to provide electric insulation between two adjacent cells.