Patents by Inventor Fran.cedilla.ois Brillouet

Fran.cedilla.ois Brillouet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6046065
    Abstract: An epitaxial deposition process is used to deposit materials that can be crystallized lattice matched to gallium arsenide onto an indium phosphide crystalline wafer. A material of this kind forms a metamorphic layer. Metamorphic layers of this kind constitute two semiconductor Bragg mirrors to form resonant cavities of surface emitting lasers of a matrix. This matrix is consolidated by a silicon support. Applications include optical telecommunications.
    Type: Grant
    Filed: September 12, 1997
    Date of Patent: April 4, 2000
    Assignee: Alcatel
    Inventors: Leon Goldstein, Fran.cedilla.ois Brillouet, Cathrine Fortin, Joel Jacquet, Paul Salet, Jean Luc Lafragette, Antonina Plais
  • Patent number: 6023354
    Abstract: A semiconductor Bragg reflector and to a method of fabricating it. The reflector comprises a plurality of stacked layers on a substrate of a III-V type material, one of the stacked layers forming a holographic grating. The layer forming the grating comprises an alternating succession of air pockets and of III-V type material. Such a reflector is particularly suitable for use in laser devices.
    Type: Grant
    Filed: June 23, 1998
    Date of Patent: February 8, 2000
    Assignee: Alcatel
    Inventors: Leon Goldstein, Hans Bissessur, Alain Bodere, Fran.cedilla.ois Brillouet, Jean Louis Gentner, Catherine Graver
  • Patent number: 5747366
    Abstract: In a method of fabricating a surface emitting semiconductor layer, to achieve good electrical confinement and good flatness of the mirrors delimiting the resonant cavity of the laser, an electrical confinement layer is made by growing a localized aluminum alloy layer on the active layer, except for an opening area on top of which the mirror is to be formed. After epitaxial regrowth, the alloy layer is oxidized laterally. Applications include the fabrication of semiconductor lasers on III-V substrates such as InP and GaAs.
    Type: Grant
    Filed: December 26, 1996
    Date of Patent: May 5, 1998
    Assignee: Alcatel Alsthom Compagnie Generale D'Electricite
    Inventors: Fran.cedilla.ois Brillouet, Leon Goldstein, Joel Jacquet, Antonina Plais, Paul Salet
  • Patent number: 5712864
    Abstract: A semiconductor photonic diplex transceiver includes a laser to generate a first optical signal having a certain wavelength and a photodetector to detect a second optical signal having another wavelength. The diplex transceiver also includes an absorber of the first signal disposed between the laser and the detector which form integral parts of an optical waveguide. The laser generates the first signal in the form of a continuous wave and is disposed between the absorber and a selective modulator of the first signal. This reduces the problems of optical and electrical crosstalk between the transmit and receive functions. Applications include user premises optical fiber transmit/receive equipments.
    Type: Grant
    Filed: March 15, 1996
    Date of Patent: January 27, 1998
    Assignee: Alcatel N.V.
    Inventors: Leon Goldstein, Jean-Louis Gentner, Fran.cedilla.ois Brillouet