Abstract: According to a method of redistributing a functional element of the present invention, an insulating resin layer is supplied onto a functional element wafer such as an LSI. A portion to be a via hole on an electrode pad of the functional element is filled with a sacrificial layer. The top of the sacrificial layer filled in the via hole is exposed from the insulating layer by grinding or polishing. Therefore, it is possible to prevent breakage of a brittle material such as a low-k material in the functional element, which would be caused by transmission of shearing stress when a conventional pillar or a conventional gold projecting electrode is used. The reliability, the yield, and the level of flatness can be improved by forming an interconnection conductive layer after the flattening process of grinding or polishing. Accordingly, a fine conductive interconnection can be formed.

Abstract: A method of providing a metal interconnect to second structures embedded in organic dielectric material is disclosed. In one aspect, the method includes obtaining a first structure with second structures, e.g., metal pillars, embedded in organic dielectric material. The method further includes, at least at some locations of the first structure, providing a stiffening layer on top of the organic dielectric material, the stiffening layer having a stiffness higher than the stiffness of the organic dielectric material. The method provides an interconnect structure free from cracks at the interface between the second structures and the organic dielectric material.