Abstract: Method for preparing a silicon substrate to form a thin electric insulating layer (24), characterized in that it comprises: a deoxidation step of at least one part of the silicon substrate (10), then a heat treatment step of the substrate at a temperature of 750° C. or less, the heat treatment being conducted in a NO-containing atmosphere at a pressure of 5.103 Pa (50 mBr) or less, in order to form a layer of silicon oxynitride (22) on the substrate. Use for the production of EPROM and DRAM memories.

Abstract: The invention relates to a transmission system and a processing system for video signals relating to TV programs, for the purpose of constructing a mosaic of TV programs displayed on a user's television set, allowing him to select a particular TV program quickly and in a relevant manner via a menu.

Abstract: A quantic effect device which functions using a Coulomb blockade phenomenon. The device includes two electron reservoirs, two sets of islands that are separated by a dielectric layer, a protective insulating layer and a control electrode.

Abstract: The invention relates to a method of switching from a first to a second video sequence, in which it is provided, in order to avoid the creation of special access points such as splicing points defined in MPEG standard, to insert at the switching point, between the two sequences, an additional sequence of k pictures. These pictures, said minimal in that sense that they are coded with a reduced number of bits, may be for instance uniform color pictures or the repetition of a single previous I or P picture.

Abstract: The invention relates to a method of switching from a first to a second coded video sequence when the bitrate of the second one is higher than the bitrate of the first one, and to a corresponding device. If the addition of the bits respectively associated to the last transmitted picture (02) of the first sequence and to the first transmitted picture (N1) of the second sequence gives at the decoding time of (02) a number greater than the size of the decoder's buffer, then the bitrate of the second sequence is increased with respect to the higher bitrate.

Abstract: The invention relates to a method of switching from a first to a second video sequence, in which it is provided, in order to avoid the creation of special access points such as splicing points defined in MPEG standard, to insert at the switching point, between the two sequences, an additional sequence of k pictures. These pictures, said minimal in that sense that they are coded with a reduced number of bits, may be for instance uniform colour pictures or the repetition of a single previous I or P picture.

Abstract: System for monitoring the performance of at least one line at a node of a digital communication network, such a system including a set of hardware registers associated with the line for registering line performance information associated therewith, a set of counters associated with the line, each counter defining a parameter depending on the line performance information, and a processing unit for, during a predetermined period of time, gathering the line performance information from the counters in a performance report to be sent to a network management unit. One table (22, 24 or 26) is associated with the line and stores all the data necessary to read the parameter for each counter of the associated set of counters with the line, and a processing machine (20) reads the table, sequentially computes the parameters defined by each counter by using the data stored in the table, and sequentially updates the counters.

Abstract: A method of nitriding the gate oxide layer of a semiconductor device includes the chemical growth on a silicon substrate of a native silicon oxide layer ≦1 nm thick; treating said substrate coated with the native silicon oxide layer with gas NO at a temperature ≦700° C. and a pressure level ≦104 Pa to obtain a nitrided native silicon oxide layer; and the growth of the gate oxide layer. The method is applicable to PMOS devices. Further modifications and alternative embodiments of various aspects of the invention will be apparent to those skilled in the art in view of this description. Accordingly, this description is to be construed as illustrative only and is for the purpose of teaching those skilled in the art the general manner of carrying out the invention. It is to be understood that the forms of the invention shown and described herein are to be taken as the presently preferred embodiments.

Abstract: A method of forming a network of islands (124) of semiconductor material on an electrically insulating material (112), comprising: p1 a) the deposition of nucleation kernels (122) on the surface of the electrically insulating material, b) the formation of islands of semiconductor material (124) respectively on the nucleation kernels. In accordance with the invention, the deposition of the nucleation kernels is effected using at least one so-called distribution layer (116) made of a material having a substantially regular molecular structure, formed on the surface of the electrically insulating material (112), in order to distribute the nucleation kernels in a substantially regular fashion on the surface of the electrically insulating material.

Abstract: The present invention relates to a method of processing an input digital video signal (IS) so as to provide a modified digital video signal (MS) for a motion estimation step (ME). Said processing method comprises the steps of computing (HIS) a histogram (h) of original values associated with pixels belonging to a video frame contained in said input digital video signal, analyzing (ANA) the histogram to provide histogram parameters (hp), and correcting (COR) the original pixel values on the basis of the histogram parameters to provide modified pixel values, which yields the modified digital video signal to be used by the motion estimation step. If required, this processing method may also comprise a step of filtering (FIL) the modified digital video signal so as to provide a filtered modified digital video signal (FMS) for the motion estimation step.

Abstract: The invention relates, in a video decoder, to a method of switching from a first to a second coded video sequence when the second bit rate is lower than the first one. If the time spent in the decoders buffer by the first bit of the first transmitted picture of the second sequence that has to be decoded, also called vbv_delay, is greater -and therefore not compatible with—than the similar period for the first bit of the first replaced picture of the first sequence, it is then reduced by giving to the bitrate of said first transmitted picture an increased value, in order to obtain the compatibility of the vbv_delays. In case of a limited bandwidth for the bit rates, this reduction operation is successively repeated for as many following pictures as necessary.

Abstract: This invention relates to a MIS transistor and its manufacturing process. The process comprises the following steps: a) production of a dummy grid on a substrate, made of a material capable of resisting heat treatment, b) formation of self-aligned source and drain regions on the dummy grid, in the substrate, c) lateral coating of the dummy grid with an electrically insulating layer, d) elimination of the dummy grid and formation of a final grid made of a material with low resistivity, in the same position as the dummy grid. Application to the manufacture of hyper-frequency circuits.

Abstract: The invention proposes a method of generating, from an input transport stream of a first type and from data of a second type, an output transport stream of said first type which notably carries said data of said second type.

Abstract: A method which includes, prior to depositing the encapsulating silicon layer: A) depositing on the Si1−xGex layer a thin film of amorphous or polycrystalline silicon, then in treating said silicon film with gas nitric oxide at a temperature between 450 to 600° C. and at a pressure level of 104 to 105 Pa to obtain a thin nitrided silicon film; or B) depositing on the Si1−xGex layer a thin film of amorphous or polycrystalline silicon and oxidizing the silicon film to form a surface film of silicon oxide less than 1 nm thick and optionally treating the oxidized amorphous or polycrystalline silicon film with nitric oxide as in A). The invention is applicable to CMOS semiconductors.

Abstract: According to this process: the position in respect of height of the "molten metal (2)/liquid slag (3)" interface (M) is continuously determined. Further the position of an isotherm (IS) located at the "liquid slag (3)/powder layer (4)" interface is continuously determined by automatically controlling the position of a thermocouple (8) on this isotherm and by measuring the displacements of this thermocouple.By comparing the position in respect of height of the molten metal/liquid slag interface (M) with the position in respect of height of the isotherm (IS), the thickness and thus the variations in thickness of the liquid slag are continuously deduced.

Abstract: Vacuum rotary filter with horizontal filtering plane comprising a distributor consisting of a distributor part, a collector part and a gas separation chamber. The collector part (110) consists of a single vat divided into three compartments (139, 140, 141, respectively), for the mother water, the first washing liquid and the second washing liquid. The compartments may be interconnected so as to enable a fluid circulation in an imposed direction. The collector part also comprises a sector for annex operations and presuction.

Abstract: A device installed on a traveling wire EDM apparatus for straightening the electrode wire and providing the electrode wire with a needle point end for facilitating manual threading of the electrode wire through close tolerance closed wire guide members. The device takes the form of a pair of spaced-apart current conductive metallic studs, a heat shield being located at some intermediate portion between the metallic studs. The metallic studs are connected across a source of electrical power. A length of wire proximate its end is held manually over the metallic studs, with an intermediate portion of the wire disposed within the heat shield, and a pull is manually exerted on the wire beyond the metallic studs while the wire is being heated by electrical current flow through the wire between the two metallic studs. The wire is heat-straightened and ruptures at its portion within the heat shield, with sharp needle point ends being formed at the point of rupture.

Abstract: The invention has for its object a process for recovering heat from a hot gaseous current, wherein it consists in making the hos gaseous current travel countercurrent to colder solid particles comprising at least a stage made up of a stack of packing elements placed on a widely perforated support, then distributing them at the top of a second column, letting them fall countercurrent to a second colder gaseous current while their grain-from-grain separation, to recover the heat of the solid heated particles.The invention also proposes a device for using the process.

Abstract: An assembly for revaporizing liquefied gases. The arrangement is of the running water type and includes a nest of tubes (1) preferably grouped to form panels and connected to inlet and outlet manifolds and over which water is caused to flow. To withstand the corrosion of salt water, an A-G4MC alloy is used and the cross-section of each tube 1 includes two diametrally opposite outer fins 2,3 and inner fins 5. Said tube is produced preferably by extrusion.Application to vaporization of natural gas.