Abstract: A robot for exploring a conduit including a first frame and a second frame. The first frame and the second frame each including a bearing module provided with a plurality of articulated arms. Each articulated arm including a bearing portion that can be applied against a wall of the conduit. Each bearing module is further configured to alternately switch from a bearing portion engaged configuration into a bearing portion disengaged configuration. The articulated arms are disposed in a plane perpendicular to the longitudinal axis x of the robot, and the articulated arms are capable of at least partially moving between said engaged configuration and said disengaged configuration, via a rotational motion about an axis parallel to the longitudinal axis x.

Abstract: The invention relates to a robot 1 comprising a first frame 10 and a second frame 10?, the first frame 10 and the second frame 10? each comprising a bearing module 11 for bearing against a wall 20 of a conduit 2, and at least one positioning system 12 for the relative positioning of the first frame 10 and the second frame 10?, the robot 1 being characterised in that the positioning system 12 comprises at least a first pair 120 of linear actuators disposed in a direction parallel to a longitudinal axis x of the robot 1, able to be independently actuated such that they move in translation, and configured to be free to rotate relative to at least one of either the first frame 10 or the second frame 10?, so as to position the first frame 10 and the second frame 10? relative to one another.

Abstract: A nanoparticle screening chip and a method using said chip allowing for determining physical properties of nanoparticles, wherein the screening chip comprises a substrate having a working surface divided into a plurality of areas, wherein (1) each of these areas presents different surface properties defined by surface energy component (d,b,a), the total free energy ?TOT of the surface of each area being defined as follows: ?TOT=?LW+2(?+??)0.5, wherein the components are: ?LW=dispersive component=d, ?+=electron acceptor component=b, ??=electron donor component=a; and (2) each of these areas comprises a plurality of subareas, each subarea comprising an array of sub-micrometric holes or elongated grooves with a different aperture size (S1, S2, S3, . . . ).

Abstract: A nanoparticle screening chip and a method using said chip allowing for determining physical properties of nanoparticles, wherein the screening chip comprises a substrate having a working surface divided into a plurality of areas, wherein (1) each of these areas presents different surface properties defined by surface energy component (d,b,a), the total free energy ?TOT of the surface of each area being defined as follows: ?TOT=?LW+2(?+??)0.5, wherein the components are: ?LW=dispersive component=d, ?+=electron acceptor component=b, ??=electron donor component=a; and (2) each of these areas comprises a plurality of subareas, each subarea comprising an array of sub-micrometric holes or elongated grooves with a different aperture size (S1, S2, S3, . . . ).

Abstract: A sensor device comprises a dielectric substrate (52); and a metal layer (53) on the substrate (52) with at least one array of cavities (54) therein and adapted to support L-SPR, each of the cavities (54) in the metal layer (53) having an opening (56) and a closed bottom (58) and widening from opening to bottom. A bed of dielectric material (62) is provided over the bottom (58) of each cavity (54) to reduce its apparent depth, the bed surface (62) being functionalized to bind to receptor moieties (64). This sensor device is particularly designed for SPR detection, but can be used in other detection techniques.

Abstract: A sensor device comprises a dielectric substrate (52); and a metal layer (53) on the substrate (52) with at least one array of cavities (54) therein and adapted to support L-SPR, each of the cavities (54) in the metal layer (53) having an opening (56) and a closed bottom (58) and widening from opening to bottom. A bed of dielectric material (62) is provided over the bottom (58) of each cavity (54) to reduce its apparent depth, the bed surface (62) being functionalized to bind to receptor moieties (64). This sensor device is particularly designed for SPR detection, but can be used in other detection techniques.

Abstract: The present invention relates to a method for preparing accessory cells, said accessory cells may themselves be used for preparing activated NK cells that may be used in various therapeutic protocols (e.g. cancer treatment). More particularly, the present invention relates to a method for preparing an accessory cell comprising the steps consisting of i) providing a cell and ii) inhibiting in said cell the expression of a gene encoding for a Killer-Cell Immunoglobulin-like Receptor(s) (KIR) ligand.

Abstract: A SPR sensing method comprising the steps of: providing a SPR sensor comprising a SPR supporting sensor surface and contacting a sample to be analysed with the sensor surface. At least one resonance condition at said SPR supporting sensor surface is monitored by illuminating the sensor surface with an SPR exciting test light beam and sensing the reflected or transmitted test light beam. Additionally, the sensor surface is illuminated with a reference light beam under conditions selected so as not to excite SPR at said sensor surface and sensing the intensity of the reflected or transmitted reference light beam. At least one property of the reflected or transmitted test light beam is determined taking into account the sensed intensity of the reflected or transmitted reference light beam.

Abstract: A SPR sensing method comprising the steps of: providing a SPR sensor comprising a SPR supporting sensor surface and contacting a sample to be analysed with the sensor surface. At least one resonance condition at said SPR supporting sensor surface is monitored by illuminating the sensor surface with an SPR exciting test light beam and sensing the reflected or transmitted test light beam. Additionally, the sensor surface is illuminated with a reference light beam under conditions selected so as not to excite SPR at said sensor surface and sensing the intensity of the reflected or transmitted reference light beam. At least one property of the reflected or transmitted test light beam is determined taking into account the sensed intensity of the reflected or transmitted reference light beam.

Abstract: An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external and an internal side with respect to the chamber (12). An electromagnetic field source (140) is arranged in front of the external side of the dielectric window (400) for generating an electromagnetic field within the plasma chamber (12). The field source comprises at least one magnetic core (301, 302, 303). The at least one magnetic core (301, 302, 303) is attached to the external side of the dielectric window (400), such that the at least one magnetic core helps the dielectric window (400) to withstand collapsing forces caused by negative pressure inside said chamber during operation.

Abstract: A process for controlling the wettability of a silicon-containing substrate including forming a polymer coating over at least one surface region of the silicon substrate, the wettability of which is to be controlled; inducing a controlled roughness on the at least one surface region by over-etching the polymer coating using a fluorinated plasma; subjecting the at least one surface region to a surface energy modifying treatment.

Abstract: An apparatus for plasma treatment of a non-conductive hollow substrate, including a plurality of ionization energy sources disposed adjacent to each other all along the part of the substrate to be treated. The apparatus also includes a processor to sequentially power the plurality of ionization energy sources from a radio frequency power source. Each ionization energy source includes two parts sandwiching the substrate. The ionization energy sources can be capacitively or inductively coupled plasma sources.

Abstract: An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external and an internal side with respect to the chamber (12). An electromagnetic field source (140) is arranged in front of the external side of the dielectric window (400) for generating an electromagnetic field within the plasma chamber (12). The field source comprises at least one magnetic core (301, 302, 303). The at least one magnetic core (301, 302, 303) is attached to the external side of the dielectric window (400), such that the at least one magnetic core helps the dielectric window (400) to withstand collapsing forces caused by negative pressure inside said chamber during operation.

Abstract: The invention relates to intravascular stents having in an inner surface an enzyme capable of catabolizing cholesterol and lipids, such as lipase, or cells that have been genetically modified to produce the enzyme, and to their use in the treatment or prevention of obstructive artheriosclerotic lesions in coronary and peripheral blood vessels, or prevention of restenosis in intra coronaric stents.

Abstract: The apparatus for plasma treatment of a non-conductive hollow substrate (1), comprises a plurality of ionisation energy sources (7-10) disposed adjacent to each other all along the part of the substrate to be treated. The apparatus further comprises a processing means (11) for sequentially powering the plurality of ionisation energy sources from a radio frequency power source (6). Each ionisation energy source (7) is comprised of two parts (7a, 7b) sandwiching the substrate. The ionisation energy sources can be capacitively or inductively coupled plasma sources.

Abstract: The plasma processing apparatus comprises a plasma chamber (1) bounded, on at least one side thereof, by an electrically conductive wall (10), said electrically conductive wall comprising one or several apertures (100) for interrupting a current path through said wall, external electromagnetic means (2) for supplying electromagnetic energy into the plasma chamber through the electrically conductive wall, thereby generating a plasma inside said chamber, and sealing means for sealing the apertures. The apparatus is characterised in that the sealing means comprises one or more electrically conductive enclosure elements which are electrically insulated from the electrically conductive wall.

Abstract: An apparatus configured to generate a time-varying magnetic field through a field admission window of a plasma processing chamber to create or sustain a plasma within the chamber by inductive coupling. The apparatus includes a magnetic core presenting a pole face structure,—an inductor means associated with the magnetic core, arranged to generate a time-varying magnetic field through the pole face structure, and—a device for injecting gas into the chamber and through the chamber and through the magnetic core.

Abstract: The apparatus for plasma treatment of a non-conductive hollow substrate (5), comprises a plasma chamber (12) provided with two oppositely facing field admission windows (8, 9), and first and second opposite coil arrangements (20, 30) located on an outer surface (8a; 9a) of the first and second windows respectively. The first and second coil arrangements being connected to power supply means (4) such that a current (I) of a same direction flows simultaneously in the first and second coil arrangements. The two coil arrangements (20, 30) induce through the substrate a magnetic flux (7) transversal and perpendicular to a substrate depth (L) for generating an electrical field in the substrate plan.

Abstract: The apparatus for plasma treatment of a non-conductive hollow substrate (5), comprises a plasma chamber (12) provided with two oppositely facing field admission windows (8, 9), and first and second opposite coil arrangements (20, 30) located on an outer surface (8a; 9a) of the first and second windows respectively. The first and second coil arrangements being connected to power supply means (4) such that a current (I) of a same direction flows simultaneously in the first and second coil arrangements. The two coil arrangements (20, 30) induce through the substrate a magnetic flux (7) transversal and perpendicular to a substrate depth (L) for generating an electrical field in the substrate plan.

Abstract: A plasma processing apparatus comprises a processing chamber having at least one opening for receiving field energy by inductive coupling, and at least one field energy source arranged to induce the field energy into the chamber via the corresponding opening. The field energy source comprises an inductor device associated with a magnetic core. The magnetic core forms a closure and gas seal for the corresponding opening.