Patents by Inventor Françoise Hébert

Françoise Hébert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-voltage transistor fabrication with trench etching technique
    Patent number: 7557394
    Abstract: A lateral high-voltage depletion-mode device structure in which fingers of semiconductor material are interdigitated with trench gates. Since the effective channel area is proportional to the depth of the trenches, a large amount of active channel area can be achieved for a given surface area.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: July 7, 2009
    Assignee: Bourns, Inc.
    Inventors: Richard A. Blanchard, Françoise Hébert