Abstract: A power semiconductor device includes a Si chip providing a Si switch and a wide bandgap material chip providing a wide bandgap material switch, wherein the Si switch and the wide bandgap material switch are electrically connected in parallel. A method for controlling a power semiconductor device includes: during a normal operation mode, controlling at least the wide bandgap material switch for switching a current through the power semiconductor device by applying corresponding gate signals to at least the wide bandgap material switch; sensing a failure in the power semiconductor device; and, in the case of a sensed failure, controlling the Si switch by applying a gate signal, such that a current is generated in the Si chip heating the Si chip to a temperature forming a permanent conducting path through the Si chip.

Abstract: A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent.

Abstract: The present invention relates to a spring element for a power semiconductor module, wherein the spring element includes a first part made from a first material and a second part made from a second material, the first material being different from the second material, wherein the first part comprises both a first contact portion having a first contact and a second contact portion having a second contact, wherein the first part comprises an electrically conductive path formed from the first contact portion to the second contact portion, and wherein the second part is adapted for exerting a spring force (FS) onto the first contact portion and the second contact portion for pressing the first contact to a first contact area of a power semiconductor module and the second contact to a second contact area of a power semiconductor module. Such a spring element may form a press contact in a power semiconductor module and may be less bulky compared to solutions in the prior art and may be formed cost-sparingly.

Abstract: A power semiconductor device includes a Si chip providing a Si switch and a wide bandgap material chip providing a wide bandgap material switch, wherein the Si switch and the wide bandgap material switch are electrically connected in parallel. A method for controlling a power semiconductor device includes: during a normal operation mode, controlling at least the wide bandgap material switch for switching a current through the power semiconductor device by applying corresponding gate signals to at least the wide bandgap material switch; sensing a failure in the power semiconductor device; and, in the case of a sensed failure, controlling the Si switch by applying a gate signal, such that a current is generated in the Si chip heating the Si chip to a temperature forming a permanent conducting path through the Si chip.

Abstract: A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent.

Abstract: A power semiconductor module includes a first main electrode, a second main electrode and a control terminal. The power semiconductor module includes controllable power semiconductor components arranged between the first main electrode and the second main electrode. At least some of the controllable power semiconductor components are arranged in a ring arrangement, wherein the controllable power semiconductor components of the ring arrangement are arranged at least approximately along a first circular line of the ring arrangement, and a control conductor track of the ring arrangement is arranged on the first main electrode, wherein the control conductor track runs at least approximately along a second circular line of the ring arrangement, and the second circular line runs concentrically relative to the first circular line.

Abstract: A semiconductor assembly includes a stack with a semiconductor module and a cooler, wherein the semiconductor module is provided in contact with the cooler. A clamping assembly is adapted to exert a force on the two sides of the stack. The stack is provided with a through hole between the two sides thereof and a part of the clamping assembly including an electrically conductive part which extends through the through hole of the stack. Thereby, a compact mechanical arrangement is provided while obtaining improved electrical properties, such as lower inductance and more even current distribution.

Abstract: The present invention relates to a spring element for a power semiconductor module, wherein the spring element includes a first part made from a first material and a second part made from a second material, the first material being different from the second material, wherein the first part comprises both a first contact portion having a first contact and a second contact portion having a second contact, wherein the first part comprises an electrically conductive path formed from the first contact portion to the second contact portion, and wherein the second part is adapted for exerting a spring force (FS) onto the first contact portion and the second contact portion for pressing the first contact to a first contact area of a power semiconductor module and the second contact to a second contact area of a power semiconductor module. Such a spring element may form a press contact in a power semiconductor module and may be less bulky compared to solutions in the prior art and may be formed cost-sparingly.

Abstract: A semiconductor assembly includes a stack with a semiconductor module and a cooler, wherein the semiconductor module is provided in contact with the cooler. A clamping assembly is adapted to exert a force on the two sides of the stack. The stack is provided with a through hole between the two sides thereof and a part of the clamping assembly including an electrically conductive part which extends through the through hole of the stack. Thereby, a compact mechanical arrangement is provided while obtaining improved electrical properties, such as lower inductance and more even current distribution.

Abstract: A power semiconductor module includes a first main electrode, a second main electrode and a control terminal. The power semiconductor module includes controllable power semiconductor components arranged between the first main electrode and the second main electrode. At least some of the controllable power semiconductor components are arranged in a ring arrangement, wherein the controllable power semiconductor components of the ring arrangement are arranged at least approximately along a first circular line of the ring arrangement, and a control conductor track of the ring arrangement is arranged on the first main electrode, wherein the control conductor track runs at least approximately along a second circular line of the ring arrangement, and the second circular line runs concentrically relative to the first circular line.

Abstract: A power semiconductor module and a power semiconductor module assembly, which includes a plurality of power semiconductor modules, are disclosed. The power semiconductor module includes an electrically conducting base plate, an electrically conducting top plate, arranged in parallel to the base plate and spaced apart from the base plate, at least one power semiconductor device, which is arranged on the base plate in a space formed between the base plate and the top plate, and at least one presspin, which is arranged in the space formed between the base plate and the top plate to provide contact between the semiconductor device and the top plate. A metallic protection plate can be provided at an inner face of the top plate facing towards the base plate, wherein the material of the protection plate has a melting temperature higher than the melting temperature of the top plate.

Abstract: A power semiconductor module and a power semiconductor module assembly, which includes a plurality of power semiconductor modules, are disclosed. The power semiconductor module includes an electrically conducting base plate, an electrically conducting top plate, arranged in parallel to the base plate and spaced apart from the base plate, at least one power semiconductor device, which is arranged on the base plate in a space formed between the base plate and the top plate, and at least one presspin, which is arranged in the space formed between the base plate and the top plate to provide contact between the semiconductor device and the top plate. A metallic protection plate can be provided at an inner face of the top plate facing towards the base plate, wherein the material of the protection plate has a melting temperature higher than the melting temperature of the top plate.

Abstract: A power semiconductor arrangement includes a base plate having a molybdenum layer, and a power semiconductor device mounted to a top side of the base plate and electrically and thermally coupled thereto. The base plate includes a metallic mounting base, which is arranged between the semiconductor device and the molybdenum layer and prevents the molybdenum layer from forming highly resistive intermetallic phases with the semiconductor device. A semiconductor module, such as a power semiconductor module, includes multiple semiconductor arrangements, whereby the base plate of the semiconductor arrangements is a common base plate. A module assembly, such as a power semiconductor module assembly, includes multiple semiconductor modules, whereby the semiconductor modules are arranged side by side to each other with electric connections between adjacent semiconductor modules.

Abstract: A first presspin includes a foot, whereby a base of the foot is provided for contacting a contact element of a power semiconductor device, such as within a power semiconductor module including a base plate and at least one power semiconductor device, which is arranged on the base plate and contacted by at least one further presspin. An insulation means is provided for electrically an outer surface of the foot. A power semiconductor module is also provided including a base plate, at least one power semiconductor device arranged on the base plate, and at least one of the aforementioned first presspin provided with the aforementioned insulation means. A power semiconductor module assembly is also provided including multiple power semiconductor modules as specified above, whereby the power semiconductor modules are arranged side by side to each other with electric connections between adjacent power semiconductor modules.

Abstract: A soldering preform for soldering in a reducing atmosphere is substantially disc-shaped and has two soldering surfaces each for being in contact with an object to be soldered, respectively, and with at least one recess on at least one soldering surfaces for constituting a channel open to a surface of the object.