Patents by Inventor Frances Hellman

Frances Hellman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits
    Patent number: 9741921
    Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.
    Type: Grant
    Filed: November 16, 2016
    Date of Patent: August 22, 2017
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Xiao Liu, Daniel R. Queen, Frances Hellman, Thomas H. Metcalf, Matthew R. Abernathy, Glenn G. Jernigan
  • Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits
    Publication number: 20170069819
    Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.
    Type: Application
    Filed: November 16, 2016
    Publication date: March 9, 2017
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Xiao Liu, Daniel R. Queen, Frances Hellman, Thomas H. Metcalf, Matthew R. Abernathy, Glenn G. Jernigan
  • Hydrogen-free amorphous dielectric insulating thin films with no tunneling states
    Patent number: 9530535
    Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10?8 Torr.
    Type: Grant
    Filed: November 12, 2014
    Date of Patent: December 27, 2016
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Xiao Liu, Daniel R. Queen, Frances Hellman
  • Hydrogen-Free Amorphous Dielectric Insulating Thin Films With No Tunneling States
    Publication number: 20150129089
    Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10?8 Torr.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 14, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Xiao Liu, Daniel R. Queen, Frances Hellman
  • Superconductor-magnet induced separation
    Patent number: 4797386
    Abstract: Separation between a magnetized member and a Type II superconducting member inherently manifestets stability in separation distance, in lateral direction and in attitude. Uses include levitation of fixed and moveable members as well as superconducting bearings.
    Type: Grant
    Filed: April 22, 1987
    Date of Patent: January 10, 1989
    Assignee: American Telephone and Telegraph Company, AT&T Bell Labs
    Inventors: Ernst M. Gyorgy, Frances Hellman, David W. Johnson, Jr.