Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) containing at least in part the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloadi

Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading gr

Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between

Abstract: The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A, 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.

Abstract: The reaction chamber (100) is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube (110) made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis (111) is vertical; the tube (110) has a cylindrical inner interspace (112) which extends along the entire length of the tube (110) and which is adapted to accommodate a flowing liquid; the chamber (100) further comprises an annular closing element (120) made of quartz and fixed to a first lower end of the tube (110) so as to close the interspace (112) preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element (120) has an annular recess (122) facing the interspace (112) so that the flowing liquid can reach the recess (122) at the bottom; the chamber (100) further comprises a set of internal conduits (130) internal to the interspace (112), wherein said internal conduits (130) extend from the first lower region of the tube (110) till a

Abstract: The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).

Abstract: The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief; the edge is accessible from a side of the susceptor for handling the supporting element.

Abstract: A reaction chamber of a reactor for epitaxial growth includes a wall (1) with a recess and a susceptor (7) comprising a body and a relief. The body is placed in said recess in a rotational manner with respect to said wall (1). The chamber includes a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth. The chamber also includes a flat covering (91, 92) located over said wall (1) and a hole (10) at said discoid supporting element (8). The shape of said hole (10) corresponds to the shape of said discoid supporting element (8). The covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).

Abstract: The tool (1) for manipulating substrates in an epitaxial reactor comprises an arm (2), a gripping disc (3) and a ball joint (4); said gripping disc (3) has a seat (5) on a lower face thereof for receiving a substrate (6) to be manipulated; said gripping disc (3) is mounted on the arm (2) through said ball joint (4) placed centrally with respect to said gripping disc (3); said gripping disc (3) is shaped so as to come into contact only with the upper edge of said substrate (6) to be manipulated; said gripping disc (3) has two degrees of freedom of rotational movement with respect to said arm (1) to allow adapting to the position of a substrate in a pocket of a susceptor of an epitaxial reactor.

Abstract: This disclosure concerns a susceptor for a reactor for epitaxial deposition comprising a body having the shape of a horizontal disc; the body has a first upper face, a second lower face and a vertical symmetry axis of the body; the first face has a plurality of disc-shaped recesses each of which with a centroid and with a symmetry axis of the recess which passes through said centroid; a section of each of said recesses taken along any vertical plane which comprises said vertical symmetry axis of the body is asymmetric with respect to any axis; a section of each of said recesses taken along any vertical plane which is parallel to said vertical symmetry axis of the body and which is perpendicular to a radius of the body passing through the centroid of the recess is symmetric with respect to a vertical axis.

Abstract: The tool (1) for manipulating substrates in an epitaxial reactor comprises an arm (2), a gripping disc (3) and a ball joint (4); said gripping disc (3) has a seat (5) on a lower face thereof for receiving a substrate (6) to be manipulated; said gripping disc (3) is mounted on the arm (2) through said ball joint (4) placed centrally with respect to said gripping disc (3); said gripping disc (3) is shaped so as to come into contact only with the upper edge of said substrate (6) to be manipulated; said gripping disc (3) has two degrees of freedom of rotational movement with respect to said arm (1) to allow adapting to the position of a substrate in a pocket of a susceptor of an epitaxial reactor.

Abstract: A reaction chamber of a reactor for epitaxial growth comprises:—a wall (1) with a recess,—a susceptor (7) comprising a body and a relief, wherein said body is placed in said recess in rotational manner with respect to said wall (1),—a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth, and—a flat covering (91, 92) located over said wall (1) and a having hole (10) at said discoid supporting element (8); wherein the shape of said hole (10) corresponds to the shape of said discoid supporting element (8); wherein said covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).

Abstract: The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief; the edge is accessible from a side of the susceptor for handling the supporting element.