Abstract: The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A. 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.

Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) containing at least in part the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloadi

Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between

Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading gr

Abstract: A system for loading and unloading wafer cassettes for an epitaxial reactor, the system includes a carousel platform, configured to transport at least one cassette, wherein the carousel platform is pivotally able to be connected to the epitaxial reactor around a carousel axis; a carousel actuator, configured to drive the rotation of the carousel platform around the carousel axis in relation to the epitaxial reactor; at least one support platform, suitable to support at least one cassette, wherein at least one support platform is pivotally connected to the carousel platform around a rotation axis that differs from the carousel axis; a rotation actuator, configured to drive the rotation of at least one support platform around the rotation axis relative to the carousel platform.

Abstract: The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A, 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.

Abstract: The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).

Abstract: The reaction chamber (100) is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube (110) made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis (111) is vertical; the tube (110) has a cylindrical inner interspace (112) which extends along the entire length of the tube (110) and which is adapted to accommodate a flowing liquid; the chamber (100) further comprises an annular closing element (120) made of quartz and fixed to a first lower end of the tube (110) so as to close the interspace (112) preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element (120) has an annular recess (122) facing the interspace (112) so that the flowing liquid can reach the recess (122) at the bottom; the chamber (100) further comprises a set of internal conduits (130) internal to the interspace (112), wherein said internal conduits (130) extend from the first lower region of the tube (110) till a

Abstract: The innovative reactor comprises: a first reaction chamber, a second reaction chamber, an induction heating system for the reaction chambers, and a liquid flow cooling system for the reaction chambers. According to some designs, the cooling system comprises a reservoir that is designed to contain coolant and that is divided into a first reservoir section and a second reservoir section in fluidic communication with each other. The two reaction chambers are typically located in two side-by-side but separate spaces.

Abstract: A system for loading and unloading wafer cassettes for an epitaxial reactor, the system includes a carousel platform, configured to transport at least one cassette, wherein the carousel platform is pivotally able to be connected to the epitaxial reactor around a carousel axis; a carousel actuator, configured to drive the rotation of the carousel platform around the carousel axis in relation to the epitaxial reactor; at least one support platform, suitable to support at least one cassette, wherein at least one support platform is pivotally connected to the carousel platform around a rotation axis that differs from the carousel axis; a rotation actuator, configured to drive the rotation of at least one support platform around the rotation axis relative to the carousel platform.

Abstract: The innovative reactor is used for epitaxial deposition of semiconductor material on substrates and comprises a reaction chamber extending along a longitudinal direction, a sledge adapted to support the reaction chamber or a portion of the reaction chamber, and a tube extending along the longitudinal direction and adapted to house the reaction chamber and the sledge supporting the reaction chamber; the sledge is adapted to slide along the longitudinal direction so as to extract/insert the reaction chamber from/into the tube when the reactor is in a non-operational condition.

Abstract: A system for loading and unloading wafers into a reaction chamber of an epitaxial reactor, the system comprising a handling robot; a linear actuator, extended along a translation axis, wherein the handling robot is configured to transfer a wafer to the linear actuator, and wherein the linear actuator is configured to receive the wafer from the handling robot and to move the wafer along the translation axis so as to place the wafer inside the reaction chamber.

Abstract: Apparatus for manufacturing semiconductor devices comprising a substrate and a film applied onto the substrate by a chemical-vapor-deposition (CVD) process, comprising: a process chamber in which to arrange substrates in a linear formation along a first axis and according to an orientation in which the substrates lie in parallel planes orthogonal to the first axis; a heating system for heating the process chamber to a predetermined temperature; a delivering unit for delivering process gas to the process chamber, in which the process gas undergoes a CVD process to form a film on each substrate of the linear formation; an exhaust gas extraction unit for extracting process exhaust gas from the process chamber; and a case enclosing the process chamber, which is configured to be traversed by gas flow that moves along a second axis transversal to the first axis and across the substrates' linear formation in the process chamber.

Abstract: The reaction chamber (100) comprises a covering system (90) that is located within its cavity (101) and comprises at least one lower covering element (120) resting on a lower wall of the cavity, and an upper covering element (130) resting on the lower covering element (120); the lower covering element (120) and the upper covering element (130) define an insulated inner space to accommodate at least one substrate, and make four walls surrounding this inner space and are spaced apart from the cavity walls; the walls of the chamber (100) are typically made of quartz and the covering system (90) is typically made of quartz.

Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) containing at least in part the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloadi

Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading gr

Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between

Abstract: The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A, 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.

Abstract: The reaction chamber (100) is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube (110) made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis (111) is vertical; the tube (110) has a cylindrical inner interspace (112) which extends along the entire length of the tube (110) and which is adapted to accommodate a flowing liquid; the chamber (100) further comprises an annular closing element (120) made of quartz and fixed to a first lower end of the tube (110) so as to close the interspace (112) preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element (120) has an annular recess (122) facing the interspace (112) so that the flowing liquid can reach the recess (122) at the bottom; the chamber (100) further comprises a set of internal conduits (130) internal to the interspace (112), wherein said internal conduits (130) extend from the first lower region of the tube (110) till a

Abstract: The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).