Abstract: MEMS ultrasonic transducer, MUT, device, comprising a semiconductor body with a first and a second main face, including: a modulation cavity extending into the semiconductor body from the second main face; a membrane body suspended on the modulation cavity and comprising a transduction membrane body and a modulation membrane body; a piezoelectric modulation structure on the modulation membrane body; a transduction cavity extending into the membrane body, the transduction membrane body being suspended on the transduction cavity; and a piezoelectric transduction structure on the transduction membrane body. The modulation membrane body has a first thickness and the transduction membrane body has a second thickness smaller than the first thickness. In use, the modulation membrane vibrates at a first frequency and the transduction membrane vibrates at a second frequency higher than the first frequency, to emit and/or receive acoustic waves at a frequency dependent on the first and the second frequencies.

Abstract: A MEMS sensing device for sensing microparticles in an environment external to the MEMS sensing device is provided.

Abstract: A MEMS device for detecting particulate and gases in the air, comprising: a first semiconductor body; a second semiconductor body with a first surface facing a first surface of the first semiconductor body; and a first spacer element and a second spacer element, which extend between the first surfaces of the semiconductor bodies so as to arrange them at a distance apart from one another and define a first duct. The MEMS device further comprises at least one of the following: a first particulate sensor comprising a first emitter unit for generating acoustic waves in the first duct, and a first particulate-detection unit for detecting the particulate, the first emitter unit and the first particulate-detection unit facing one another through the first duct; and a first gas sensor, which faces the first duct and is configured to detect said gases in the air present in the first duct.

Abstract: A MEMS device for detecting particulate and gases in the air, comprising: a first semiconductor body; a second semiconductor body with a first surface facing a first surface of the first semiconductor body; and a first spacer element and a second spacer element, which extend between the first surfaces of the semiconductor bodies so as to arrange them at a distance apart from one another and define a first duct. The MEMS device further comprises at least one of the following: a first particulate sensor comprising a first emitter unit for generating acoustic waves in the first duct, and a first particulate-detection unit for detecting the particulate, the first emitter unit and the first particulate-detection unit facing one another through the first duct; and a first gas sensor, which faces the first duct and is configured to detect said gases in the air present in the first duct.

Abstract: A MEMS sensing device for sensing microparticles in an environment external to the MEMS sensing device is provided.

Abstract: A piezoelectric micro-machined ultrasonic transducer (PMUT) comprising: a semiconductor body having a first cavity and a membrane, which is suspended over the first cavity and faces a front side of the semiconductor body; and a piezoelectric transducer assembly extending at least in part on the membrane, which may be actuated for generating a deflection of the membrane. A second cavity extends buried in a peripheral region of the membrane and delimits a central region of the membrane. Moreover, the peripheral portion has a stiffness lower than the stiffness of the central portion.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: A piezoelectric micro-machined ultrasonic transducer (PMUT) comprising: a semiconductor body having a first cavity and a membrane, which is suspended over the first cavity and faces a front side of the semiconductor body; and a piezoelectric transducer assembly extending at least in part on the membrane, which may be actuated for generating a deflection of the membrane. A second cavity extends buried in a peripheral region of the membrane and delimits a central region of the membrane. Moreover, the peripheral portion has a stiffness lower than the stiffness of the central portion.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.