Abstract: Structures including a single-photon avalanche diode and methods of forming such structures. The structure comprises a semiconductor substrate including a trench. The trench surrounds a portion of the semiconductor substrate. The structure further comprises a deep trench isolation region that includes a dielectric layer and a semiconductor layer inside the trench. The dielectric layer is disposed between a sidewall of the trench and the semiconductor layer. The structure further comprises an active device that includes a doped region in the semiconductor layer.

Abstract: The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to devices containing photodiodes such as avalanche photodiodes (APDs) and single photon avalanche diodes (SPADs). The present disclosure may provide a device including a substrate, a first well of a first conductivity type in the substrate, a second well of a second conductivity type in the substrate, and a buried layer of the second conductivity type in the substrate. The buried layer may be below the first well and the second well. The buried layer may have a first section and a second section, in which the first section has a larger thickness than the second section.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to single-photon avalanche diodes and methods of manufacture. The structure includes: a first deep trench structure in a semiconductor substrate having a conductive material and a material of a first polarity; a second deep trench structure in the semiconductor substrate surrounding the first deep trench structure, the second deep trench structure having a conductive material and a material of a second polarity; and contacts to both the first deep trench structure and the second deep trench structure.