Patents by Inventor Francesco Pipia

Francesco Pipia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change memory cell with self-aligned vertical heater and low resistivity interface
    Patent number: 9412941
    Abstract: A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.
    Type: Grant
    Filed: March 16, 2015
    Date of Patent: August 9, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Barbara Zanderighi, Francesco Pipia
  • Phase change memory cell with self-aligned vertical heater and low resistivity interface
    Patent number: 9246093
    Abstract: A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.
    Type: Grant
    Filed: July 1, 2009
    Date of Patent: January 26, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Barbara Zanderighi, Francesco Pipia
  • PHASE CHANGE MEMORY CELL WITH SELF-ALIGNED VERTICAL HEATER AND LOW RESISTIVITY INTERFACE
    Publication number: 20150188040
    Abstract: A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.
    Type: Application
    Filed: March 16, 2015
    Publication date: July 2, 2015
    Inventors: Barbara Zanderighi, Francesco Pipia
  • Phase change memory cell with self-aligned vertical heater and low resistivity interface
    Patent number: 8981336
    Abstract: A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.
    Type: Grant
    Filed: July 1, 2009
    Date of Patent: March 17, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Barbara Zanderighi, Francesco Pipia
  • PHASE CHANGE MEMORY CELL WITH SELF-ALIGNED VERTICAL HEATER AND LOW RESISTIVITY INTERFACE
    Publication number: 20110001114
    Abstract: A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.
    Type: Application
    Filed: July 1, 2009
    Publication date: January 6, 2011
    Inventors: Barbara Zanderighi, Francesco Pipia
  • Process for removing polymers during the fabrication of semiconductor devices
    Patent number: 6720271
    Abstract: The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface of the semiconductor device and rinsing the semiconductor device with ozonized water, i.e. water enriched with ozone, in which water is preferably deionized (ozone-DIW).
    Type: Grant
    Filed: July 2, 2002
    Date of Patent: April 13, 2004
    Assignee: STMicroelectronics S.r.l.
    Inventors: Enrico Bellandi, Francesco Pipia, Mauro Alessandri
  • Process for removing polymers during the fabrication of semiconductor devices
    Publication number: 20030027429
    Abstract: The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface of the semiconductor device and rinsing the semiconductor device with ozonized water, i.e. water enriched with ozone, in which water is preferably deionized (ozone-DIW).
    Type: Application
    Filed: July 2, 2002
    Publication date: February 6, 2003
    Applicant: STMicroelectronics S.r.I.
    Inventors: Enrico Bellandi, Francesco Pipia, Mauro Alessandri