Abstract: It is proposed a sensor for measuring a gas property, wherein the sensor comprises a semiconductor die, wherein the semiconductor die comprises a reference cavity and a measuring cavity, wherein a reference sensor element is arranged in the reference cavity, wherein a measuring sensor element is arranged in the measuring cavity, wherein the reference cavity is sealed from ambient gas, wherein the measuring cavity is fluidly connected to ambient gas. Further it is proposed a method for manufacturing such a sensor.

Abstract: The semiconductor device includes a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface, a first glass-based substrate, on which the MEMS chip is arranged by its first main surface, and a second substrate, which is arranged on the second main surface of the MEMS chip, wherein the MEMS chip has a first recess connected to the surroundings by way of a plurality of perforation holes arranged in the first substrate.

Abstract: A pressure sensor is configured to monitor a first resistance value of a first resistor and a second resistance value of a second resistor. The first resistor and the second resistor are configured to be sensing elements of a sensing component of a pressure sensor. The pressure sensor is configured to determine, based on a difference between the first resistance value and the second resistance value satisfying a threshold, that a measurement from the sensing component is unreliable. The pressure sensor is configured to perform, based on determining that the measurement from the sensing component is unreliable, an action associated with the pressure sensor.

Abstract: A pressure sensor may monitor a first resistance value of a first resistor and a second resistance value of a second resistor. The first resistor and the second resistor may be sensing elements of a sensing component of a pressure sensor. The pressure sensor may determine, based on a difference between the first resistance value and the second resistance value satisfying a threshold, that a measurement from the sensing component is unreliable. The pressure sensor may perform, based on determining that the measurement from the sensing component is unreliable, an action associated with the pressure sensor.

Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.

Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.

Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.