Abstract: Semiconductor stack structures such as magnetic tunnel junction structures having a magnetic free layer that is grown on composite, obliquely deposited seed layers to induce an increased in-plane magnetic anisotropy Hk of the magnetic free layer. In one aspect, a semiconductor device includes a composite seed layer formed on a substrate, and a magnetic layer formed on the composite seed layer. The composite seed layer includes a first seed layer obliquely formed with an incident angle from a surface normal of the substrate along a first direction of the substrate, and a second seed layer obliquely formed with the incident angle on the first seed layer along a second direction of the substrate, opposite the first direction.

Abstract: Semiconductor stack structures such as magnetic tunnel junction structures having a magnetic free layer that is grown on composite, obliquely deposited seed layers to induce an increased in-plane magnetic anisotropy Hk of the magnetic free layer. In one aspect, a semiconductor device includes a composite seed layer formed on a substrate, and a magnetic layer formed on the composite seed layer. The composite seed layer includes a first seed layer obliquely formed with an incident angle from a surface normal of the substrate along a first direction of the substrate, and a second seed layer obliquely formed with the incident angle on the first seed layer along a second direction of the substrate, opposite the first direction.