Abstract: The invention relates to a method for etching a structure (1) including at least one material (4) to be etched, said method consisting in: selecting at least one chemical species that can react with the material (4) to be etched; selecting at least one soluble compound that can release this chemical species; producing a solution (11) containing said compound; placing the structure (1) in a position such that the surface of the material to be etched is in the presence of the solution and additional bubbles of a gas; and producing high-frequency ultrasounds in the solution, at at least one frequency, capable of generating reactive cavitation bubbles such that the chemical species is generated in the presence of these additional bubbles and reacts with the material to be etched, thereby producing a soluble compound or a precipitate.

Abstract: The invention relates to a method for etching a structure (1) including at least one material (4) to be etched, said method consisting in: selecting at least one chemical species that can react with the material (4) to be etched; selecting at least one soluble compound that can release this chemical species; producing a solution (11) containing the compound and a powder of particles or solid grains (13) in suspension; placing the material to be etched in the presence of the solution; and producing high-frequency ultrasounds in the solution, at at least one frequency, capable of generating active cavitation bubbles such that the chemical species is generated and reacts with the material to be etched, thereby producing a soluble compound or a precipitate.

Abstract: Method and device for selectively etching a first material (4) relative to a second material (2), comprising a bath (11) of a solution capable of producing at least one chemical species for etching the first material (4) but not the second (2) and a system (12) for generating ultrasound at a frequency between 100 kHz and 3 MHz in the bath in order to produce cavitation bubbles.

Abstract: The invention relates to a method for etching a structure (1) including at least one material (4) to be etched, said method consisting in: selecting at least one chemical species that can react with the material (4) to be etched; selecting at least one soluble compound that can release this chemical species; producing a solution (11) containing the compound and a powder of particles or solid grains (13) in suspension; placing the material to be etched in the presence of the solution; and producing high-frequency ultrasounds in the solution, at least one frequency, capable of generating active cavitation bubbles such that the chemical species is generated and reacts with the material to be etched, thereby producing a soluble compound or a precipitate.

Abstract: The invention relates to a method for etching a structure (1) including FIG. 1 at least one material (4) to be etched, said method consisting in: selecting at least one chemical species that can react with the material (4) to be etched; selecting at least one soluble compound that can release this chemical species; producing a solution (11) containing said compound; placing the structure (1) in a position such that the surface of the material to be etched is in the presence of the solution and additional bubbles of a gas; and producing high-frequency ultrasounds in the solution, at at least one frequency, capable of generating reactive cavitation bubbles such that the chemical species is generated in the presence of these additional bubbles and reacts with the material to be etched, thereby producing a soluble compound or a precipitate.

Abstract: Method and device for selectively etching a first material (4) relative to a second material (2), comprising a bath (11) of a solution capable of producing at least one chemical species for etching the first material (4) but not the second (2) and a system (12) for generating ultrasound at a frequency between 100 kHz and 3 MHz in the bath in order to produce cavitation bubbles.

Abstract: The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.

Abstract: A method for forming catalytic sites at the surface of a support, which includes: depositing on the surface a liquid film (3) containing elements (4) of a living matter, capable of moving when subjected to an electric and/or magnetic field and designed to form catalytic traces or alterations at the surface of the substrate; applying an electric and/or magnetic field to the film such that, under the effect of the field, at least some of the living matter elements move and assemble on zones of the substrate surface; and eliminating the liquid film and the living matter at the substrate surface while allowing the traces left by the living element at the substrate surface to subsist so as to constitute the catalytic sites at the locations of the traces.

Abstract: The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.

Abstract: The invention concerns a method for forming catalytic sites at the surface of a support, which consists in: depositing on said surface a liquid film (3) containing elements (4) of a living matter, capable of moving when subjected to an electric and/or magnetic field and designed to form catalytic traces or alterations at the surface of the substrate; applying an electric and/or magnetic field to said film such that, under the effect of the field, at least some of said living matter elements move and assemble on zones of the substrate surface; and eliminating the liquid film and the living matter at the substrate surface while allowing the traces left by said living element at the substrate surface to subsist so as to constitute said catalytic sites at the locations of said traces.