Abstract: The present invention is a loadbearing device known by the Applicants' as the “Central Osteoarticular Relief and Performance Structured Load Distribution System” (“CORPS-LDS”), which is worn by a user to help distribute the weight of a load being carried or borne by the user. More specifically, the weight is substantially shifted from the user's shoulders to their hips while not overly inhibiting the user's range of motion. Furthermore, it is an aspect of the CORPS-LDS to distribute the weight being carried in a manner that reduces the strain on the spine and back while lessening the metabolic expenditure of the user. Moreover, the present invention is a protective vest system that utilizes the present invention's CORPS-LDS.

Abstract: The present invention is a loadbearing device known by the Applicants' as the “Central Osteoarticular Relief and Performance Structured Load Distribution System” (“CORPS-LDS”), which is worn by a user to help distribute the weight of a load being carried or borne by the user. More specifically, the weight is substantially shifted from the user's shoulders to their hips while not overly inhibiting the user's range of motion. Furthermore, it is an aspect of the CORPS-LDS to distribute the weight being carried in a manner that reduces the strain on the spine and back while lessening the metabolic expenditure of the user. Moreover, the present invention is a protective vest system that utilizes the present invention's CORPS-LDS.

Abstract: In one exemplary embodiment, a multi-chip semiconductor connector is utilized for forming a semiconductor package having a plurality of semiconductor die. The multi-chip semiconductor connector is utilized to mechanically attach the plurality of semiconductor die together and to provide electrical connection to the plurality of semiconductor die.

Abstract: In one embodiment, a packaged semiconductor device having enhanced thermal dissipation characteristics includes a lead frame structure and a semiconductor chip having a major current carrying or heat generating electrode. The semiconductor chip is oriented so that the major current carrying electrode faces the top of the package or away from the next level of assembly. The packaged semiconductor device further includes a non-planar, stepped or undulating attachment structure coupling the current carrying electrode to the lead frame. A high thermal conductivity mold compound and thin package profile further enhance thermal dissipation.

Abstract: A semiconductor device (50) includes a semiconductor die (20) having a first surface (14) for forming electronic circuitry. A coating layer (16) formed on a second surface (15) of the semiconductor die has a color that contrasts with the color of the semiconductor die. The coating layer is patterned to expose a portion of the second surface to reveal information pertaining to the semiconductor device. The coating layer is patterned by directing a radiation beam (30) such as a laser to selectively remove material from the coating layer.

Abstract: In one embodiment, a semiconductor package structure includes a plurality of upright clips having ends with mounting surfaces for vertically mounting the package to a next level of assembly. A semiconductor chip is interposed between the upright clips together with one or more spacers.

Abstract: In one exemplary embodiment, a multi-chip connector is formed to have a first conductive strip that is suitable for attaching to a first semiconductor die and a second conductive strip that is attached suitable for attaching to a second semiconductor die.

Abstract: In one exemplary embodiment, a multi-chip connector is formed to have a first conductive strip that is attached to a first semiconductor die and a second conductive strip that is attached to a second semiconductor die.

Abstract: A semiconductor device (10) includes a semiconductor die (20) and an inductor (30, 50) formed with a bonding wire (80) attached to a top surface (21) of the semiconductor die. The bonding wire is extended laterally a distance (L30, L150) greater than its height (H30, H50) to define an insulating core (31, 57). In one embodiment, the inductor is extended beyond an edge (35, 39) of the semiconductor die to reduce loading.

Abstract: In one embodiment, a method for forming a leaded molded array package includes placing a lead frame assembly into a molding apparatus having lead cavities. The method further includes forming seals between conductive leads within the lead frame assembly and the lead cavities, and encapsulating the lead frame assembly to form a molded array assembly. The molded array assembly is then separated into individual leaded molded packages.

Abstract: A semiconductor component having a positionally adaptable locking feature and a method for manufacturing the semiconductor component using a wire bond tool. A conductive support substrate having a flag portion, a lead portion and tie-bars is provided. A semiconductor chip is coupled to the flag portion of the conductive support substrate. A conductive attachment structure couples the semiconductor chip to the lead portion. One or more positionally adaptable locking features are formed on the conductive substrate such that they extend upward from the substrate. Alternatively, the positionally adaptable locking features can be formed on the conductive attachment structure, the semiconductor chip, the tie-bars, other circuit elements, or combinations thereof. The positionally adaptable locking features may be bonding wires, wire bond posts, or the like.

Abstract: A semiconductor device (50) includes a semiconductor die (20) having a first surface (14) for forming electronic circuitry. A coating layer (16) formed on a second surface (15) of the semiconductor die has a color that contrasts with the color of the semiconductor die. The coating layer is patterned to expose a portion of the second surface to reveal information pertaining to the semiconductor device. The coating layer is patterned by directing a radiation beam (30) such as a laser to selectively remove material from the coating layer.

Abstract: A seconductor device (50) includes a semiconductor die (20) having a first surface (14) for forming electronic circuitry. A coating layer (16) formed on a second surface (15) of the semiconductor die has a color that contrasts with the color of the semiconductor die. The coating layer is patterned to expose a portion of the second surface to reveal information pertaining to the semiconductor device. The coating layer is patterned by directing a radiation beam (30) such as a laser to selectively remove material from the coating layer.

Abstract: An apparatus and method for producing liquefied natural gas. A liquefaction plant may be coupled to a source of unpurified natural gas, such as a natural gas pipeline at a pressure letdown station. A portion of the gas is drawn off and split into a process stream and a cooling stream. The cooling stream passes through an expander creating work output. A compressor may be driven by the work output and compresses the process stream. The compressed process stream is cooled, such as by the expanded cooling stream. The cooled, compressed process stream is divided into first and second portions with the first portion being expanded to liquefy the natural gas. A gas-liquid separator separates the vapor from the liquid natural gas. The second portion of the cooled, compressed process stream is also expanded and used to cool the compressed process stream.

Abstract: A power semiconductor package, including a leadframe having at least one first terminal, a second terminal and a third terminal. The package also includes a semiconductor power die having a bottom surface defining a first current carrying electrode and a top surface on which a first metalized region defining a second current carrying electrode and a second metalized region defining a control electrode are disposed, the bottom surface being coupled to the leadframe such that the first terminal is electrically connected to the first current carrying electrode. A clip is also coupled to the first metalized region defining the second current carrying electrode and to the second terminal such that it is electrically coupled to the second current carrying electrode.

Abstract: In one exemplary embodiment, a multi-chip semiconductor connector is utilized for forming a semiconductor package having a plurality of semiconductor die. The multi-chip semiconductor connector is utilized to mechanically attach the plurality of semiconductor die together and to provide electrical connection to the plurality of semiconductor die.

Abstract: A semiconductor device (10) includes a semiconductor die (20) and an inductor (30, 50) formed with a bonding wire (80) attached to a top surface (21) of the semiconductor die. The bonding wire is extended laterally a distance (L30, L150) greater than its height (H30, H50) to define an insulating core (31, 57). In one embodiment, the inductor is extended beyond an edge (35, 39) of the semiconductor die to reduce loading.

Abstract: In one exemplary embodiment, a multi-chip connector is formed to have a first conductive strip that is attached to a first semiconductor die and a second conductive strip that is attached to a second semiconductor die.

Abstract: In one exemplary embodiment, a multi-chip connector is formed to have a first conductive strip that is suitable for attaching to a first semiconductor die and a second conductive strip that is attached suitable for attaching to a second semiconductor die.

Abstract: A seconductor device (50) includes a semiconductor die (20) having a first surface (14) for forming electronic circuitry. A coating layer (16) formed on a second surface (15) of the semiconductor die has a color that contrasts with the color of the semiconductor die. The coating layer is patterned to expose a portion of the second surface to reveal information pertaining to the semiconductor device. The coating layer is patterned by directing a radiation beam (30) such as a laser to selectively remove material from the coating layer.