Abstract: A plurality of mesoporous metal nitride materials may be formed by a method that includes treating with ammonia (or a related bonded nitrogen and hydrogen containing reducing material) a mixed metal oxide material that comprises at least one first metal that forms an unstable product with ammonia and at least one second metal that forms a stable product with ammonia to form the metal nitride materials that include the second metal but not the first metal. The method contemplates forming metal nitride materials, as well as metal oxynitride materials. A related method that uses a non-bonded nitrogen and hydrogen containing reducing material may yield a mesoporous metal oxide. In particular the at least one metal that forms an unstable product with ammonia comprises zinc metal.

Abstract: A plurality of mesoporous metal nitride materials may be formed by a method that includes treating with ammonia (or a related bonded nitrogen and hydrogen containing reducing material) a mixed metal oxide material that comprises at least one first metal that forms an unstable product with ammonia and at least one second metal that forms a stable product with ammonia to form the metal nitride materials that include the second metal but not the first metal. The method contemplates forming metal nitride materials, as well as metal oxynitride materials. A related method that uses a non-bonded nitrogen and hydrogen containing reducing material may yield a mesoporous metal oxide. In particular the at least one metal that forms an unstable product with ammonia comprises zinc metal.

Abstract: The present invention provides compositions and a novel high-yielding process for preparing high purity Group III nitrides. The process involves heating a Group III metal and a catalytic amount of a metal wetting agent in the presence of a nitrogen source. Group III metals can be stoichiometrically converted into high purity Group III nitride powders in a short period of time. The process can provide multi-gram quantities of high purity Group III nitrides in relatively short reaction times. Detailed characterizations of GaN powder were preformed and are reported herein, including morphology and structure by SEM and XRD, optical properties by cathodoluminescence (CL), and Raman spectra to determine the quality of the GaN particles. The purity of GaN powder was found to be greater than 99.9% pure, as analyzed by Glow Discharge Mass Spectrometry (GDMS). Green, yellow, and red light emission can be obtained from doped GaN powders.