Patents by Inventor Francis DOMART

Francis DOMART has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor and its manufacturing process
    Patent number: 11031505
    Abstract: A transistor carried by a substrate comprising an active layer, the transistor comprising: at least one source area and at least one drain area; at least one electrical contact area; at least one conduction channel; at least one gate; wherein the gate comprises: a longitudinal portion; a transverse portion extending on either side of a portion of the active layer and comprising: at least a first portion extending beyond a portion of a first side of the portion of the active layer on a first extension dimension I2; at least a second portion extending beyond a portion of a second side of the portion of the active layer on a second extension dimension I3; and in that: I2>I3 with I3?0.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: June 8, 2021
    Assignee: X-FAB FRANCE
    Inventors: Philippe Trovati, Nicolas Pons, Pascal Costaganna, Francis Domart
  • TRANSISTOR AND ITS MANUFACTURING PROCESS
    Publication number: 20190245097
    Abstract: A transistor carried by a substrate comprising an active layer, the transistor comprising: at least one source area and at least one drain area; at least one electrical contact area; at least one conduction channel; at least one gate; wherein the gate comprises: a longitudinal portion; a transverse portion extending on either side of a portion of the active layer and comprising: at least a first portion extending beyond a portion of a first side of the portion of the active layer on a first extension dimension I2; at least a second portion extending beyond a portion of a second side of the portion of the active layer on a second extension dimension I3; and in that: I2>I3 with I3?0.
    Type: Application
    Filed: December 26, 2018
    Publication date: August 8, 2019
    Inventors: Philippe TROVATI, Nicolas PONS, Pascal COSTAGANNA, Francis DOMART
  • Method for the formation of transistors PDSO1 and FDSO1 on a same substrate
    Patent number: 10181429
    Abstract: The present invention relates to a method for forming an electronic device intended to accommodate at least one fully depleted transistor of the FDSOI type and at least one partially depleted transistor of the PDSOI type, from a stack of layers (10) comprising at least one insulating layer (100) topped with at least one active layer (200) made of a semiconductor material, the method comprising at least one step of dry etching and one step of height adjustment between at least two etched elements.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: January 15, 2019
    Assignee: X-FAB Semiconductor Foundries AG
    Inventors: Pascal Costaganna, Francis Domart, Gregory U'Ren
  • METHOD FOR THE FORMATION OF TRANSISTORS PDSO1 AND FDSO1 ON A SAME SUBSTRATE
    Publication number: 20170345724
    Abstract: The present invention relates to a method for forming an electronic device intended to accommodate at least one fully depleted transistor of the FDSOI type and at least one partially depleted transistor of the PDSOI type, from a stack of layers (10) comprising at least one insulating layer (100) topped with at least one active layer (200) made of a semiconductor material, the method comprising at least one step of dry etching and one step of height adjustment between at least two etched elements.
    Type: Application
    Filed: May 23, 2017
    Publication date: November 30, 2017
    Inventors: Pascal COSTAGANNA, Francis DOMART, Gregory U'REN