Abstract: A process and installation for producing cooled air and water or energy and water from hot damp air. In the former embodiment, the hot damp air is first compressed. Then, the compressed air is at least partially dehumidified and cooled. The dehumidified, cooled, compressed air is thereafter expanded. In the latter embodiment, the hot damp air is first expanded. The expanded air is thereafter compressed. In addition to the above, the invention also has utility in desalinating salt water.

Abstract: The present invention relates to an apparatus for the purification of water by ultraviolet radiation.A pipe traversed by the liquid to be purified contains an ultraviolet lamp and an electrovalve electrically connected in series with the lamp and placed upstream of the latter. The resistance of the electrovalve is substantially equal to the load impedance of the lamp, the assembly being supplied with power by a solar collector.Application to the purification of water.

Abstract: Solar radiation is collected and directed through transparent material for the optical conversion of solar radiation to infrared radiation onto a rod-shaped multijunction semi-conductor photovoltaic cell. This is achieved by means of a focusing structure of linear form having a focal line and a plate of transparent converting material. The plate is placed in the vicinity of the focal line and performs the double function of light guide and optical converter. The semiconductor rod is placed along one of the longitudinal edges of the plate.

Abstract: A photovoltaic cell includes a metal support which is coated with a metal having a low melting point on which a crystalline layer of a semiconductive material is deposited, the material being doped to form a p-n semiconductor. In preferred embodiments the metal support may be a cell plate, the metal having a low melting point may be tin, and the semiconductive material may be silicon.According to the method of manufacturing the cell a gaseous compound containing a material adapted to form the semiconductive crystalline layer is decomposed in a chamber containing a metal support coated with a metal having a low melting point, the temperature of the metal having a low melting point is then raised to a value such that the metal is in a liquid state and forms a liquid metal substrate on which the crystalline layer forms by epitaxy, and finally the gaseous compound is suitably doped so that the semiconductive layer has a p-n type structure.