Abstract: A semiconductor package includes: a die coupled to a substrate; a housing coupled to the substrate and at least partially enclosing the die within a cavity of the housing, and; a pin fixedly coupled to the housing and electrically coupled with the die. The pin includes a reversibly elastically deformable lower portion, which in implementations includes a spring, configured to compress to prevent a lower end of the pin from lowering beyond a predetermined point relative to the substrate when the housing is lowered to be coupled to the substrate. The pin is fixedly coupled in a top of the housing and is configured to be coupled with the substrate by lowering the housing towards the substrate. In implementations the pin includes two rigid portions coupled together only with a coil spring, the spring biasing the rigid portions away from one another when the housing is lowered towards the substrate.

Abstract: Forming a semiconductor package includes coupling electrically conductive elements with a substrate, coupling a first die with one or more of the electrically conductive elements, and at least partially encapsulating the first die and electrically conductive elements in a first mold layer. A first redistribution layer (RDL) is placed over the first mold layer and electrically coupled with the first die. A second die is coupled with the first RDL, and the second die and first RDL are at least partially encapsulated in a second mold layer. A second RDL is formed over the second mold layer and is electrically coupled with the second die. A third mold layer at least partially encapsulates the second RDL. A portion of the substrate is removed to expose (and a solder mask is applied to) surfaces of the electrically conductive elements and of the first mold layer to form a stacked embedded package.

Abstract: Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

Abstract: A method of forming a semiconductor package. Implementations include forming on a die backside an intermediate metal layer having multiple sublayers, each including a metal selected from the group consisting of titanium, nickel, copper, silver, and combinations thereof. A tin layer is deposited onto the intermediate metal layer and is then reflowed with a silver layer of a substrate to form an intermetallic layer having a melting temperature above 260 degrees Celsius and including an intermetallic consisting of silver and tin and/or an intermetallic consisting of copper and tin. Another method of forming a semiconductor package includes forming a bump on each of a plurality of exposed pads of a top side of a die, each exposed pad surrounded by a passivation layer, each bump including an intermediate metal layer as described above and a tin layer coupled to the intermediate metal layer is reflowed to form an intermetallic layer.

Abstract: A semiconductor device includes a singulated region of semiconductor material having a first major surface and a second major surface opposite to the first major surface. In one embodiment, the second major surface includes a recessed surface portion bounded by opposing sidewall portions extending outward from the region of semiconductor material in cross-sectional view. The sidewall portions have outer surfaces defining peripheral edge segments of the singulated region of semiconductor material. An active device region is disposed adjacent to the first major surface and a first conductive layer is disposed adjoining the recessed surface portion. The recessed surface portion provides a semiconductor device having improved electrical characteristics, and the sidewall portions provide a semiconductor device that is less susceptible to warpage, breakage, and other reliability issues.

Abstract: A semiconductor device has a plurality of interconnected modular units to form a 3D semiconductor package. Each modular unit is implemented as a vertical component or a horizontal component. The modular units are interconnected through a vertical conduction path and lateral conduction path within the vertical component or horizontal component. The vertical component and horizontal component each have an interconnect interposer or semiconductor die. A first conductive via is formed vertically through the interconnect interposer. A second conductive via is formed laterally through the interconnect interposer. The interconnect interposer can be programmable. A plurality of protrusions and recesses are formed on the vertical component or horizontal component, and a plurality of recesses on the vertical component or horizontal component. The protrusions are inserted into the recesses to interlock the vertical component and horizontal component.

Abstract: A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

Abstract: A semiconductor device has a semiconductor die containing a base material having an active surface and a back surface opposite the active surface. A portion of the base material is removed by plasma etching to form an alignment recess in the base material. Alternatively, an alignment protrusion is formed over the base material. The alignment recess or alignment protrusion make a non-uniform surface. The semiconductor die is disposed over a substrate with a portion of the substrate, such as a die pad, positioned within the alignment recess. The die pad may be disposed partially or completely within the alignment recess of the base material. The base material may extend beyond the die pad, or the alignment recess or alignment protrusion may extend a length of the base material. A metal layer can be formed in the alignment recess of the base material.

Abstract: A stacked semiconductor device structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a recessed surface portion bounded by opposing sidewall portions extending outward to define a recessed region. A conductive layer is disposed along at least the recessed surface portion. The second semiconductor device is disposed within the recessed portion and is electrically connected to the conductive layer. In one embodiment, the stacked semiconductor device is connected to a conductive lead frame and is at least partially encapsulated by a package body.

Abstract: A semiconductor device has a first semiconductor wafer. The first semiconductor wafer is singulated to provide a first wafer section including at least one first semiconductor die or a plurality of first semiconductor die. The first wafer section is a fractional portion of the first semiconductor wafer. An edge support structure is formed around the first wafer section. A second wafer section includes at least one second semiconductor die. The second wafer section can be an entire second semiconductor wafer. The first semiconductor die is a first type of semiconductor device and the second semiconductor die is a second type of semiconductor device. An alignment opening is formed through the first wafer section and second wafer section with a light source projected through the opening. The first wafer section is bonded to the second wafer section with the first semiconductor die aligned with the second semiconductor die.

Abstract: A through-substrate vias structure includes a substrate having opposing first and second major surfaces. One or more conductive via structures are disposed extending from the first major surface to a first vertical distance within the substrate. A recessed region extends from the second major surface to a second vertical distance within the substrate and adjoining a lower surface of the conductive via. In one embodiment, the second vertical distance is greater than the first vertical distance. A conductive region is disposed within the recessed region and is configured to be in electrical and/or thermal communication with the conductive via.

Abstract: A method for removing material from a substrate includes providing the substrate with first and second opposing major surfaces. A masking layer is disposed along one of the first major surface and the second major surface, and is provided with a plurality of openings. The substrate is placed within an etching apparatus and material is removed from the substrate through openings using the etching apparatus. The thickness of the substrate is measured within the etching apparatus using a thickness transducer. The measured thickness is compared to a predetermined thickness and the material removal step is terminated responsive to the measured thickness corresponding to the predetermined thickness. In one embodiment, the method is used to more accurately form recessed regions in semiconductor die, which can be used in, for example, stacked device configurations.

Abstract: A semiconductor device has a first semiconductor die with a base material. A covering layer is formed over a surface of the base material. The covering layer can be made of an insulating material or metal. A trench is formed in the surface of the base material. The covering layer extends into the trench to provide the cantilevered protrusion of the covering layer. A portion of the base material is removed by plasma etching to form a cantilevered protrusion extending beyond an edge of the base material. The cantilevered protrusion can be formed by removing the base material to the covering layer, or the cantilevered protrusion can be formed within the base material under the covering layer. A second semiconductor die is disposed partially under the cantilevered protrusion. An interconnect structure is formed between the cantilevered protrusion and second semiconductor die.

Abstract: A semiconductor device has a semiconductor die containing a base material having a first surface and a second surface with an image sensor area. A masking layer with varying width openings is disposed over the first surface of the base material. The openings in the masking layer are larger in a center region of the semiconductor die and smaller toward edges of the semiconductor die. A portion of the first surface of the base material is removed by plasma etching to form a first curved surface. A metal layer is formed over the first curved surface of the base material. The semiconductor die is positioned over a substrate with the first curved surface oriented toward the substrate. Pressure and temperature is applied to assert movement of the base material to change orientation of the second surface with the image sensor area into a second curved surface.

Abstract: A method of forming a semiconductor package. Implementations include forming on a die backside an intermediate metal layer having multiple sublayers, each including a metal selected from the group consisting of titanium, nickel, copper, silver, and combinations thereof. A tin layer is deposited onto the intermediate metal layer and is then reflowed with a silver layer of a substrate to form an intermetallic layer having a melting temperature above 260 degrees Celsius and including an intermetallic consisting of silver and tin and/or an intermetallic consisting of copper and tin. Another method of forming a semiconductor package includes forming a bump on each of a plurality of exposed pads of a top side of a die, each exposed pad surrounded by a passivation layer, each bump including an intermediate metal layer as described above and a tin layer coupled to the intermediate metal layer is reflowed to form an intermetallic layer.

Abstract: A method of bonding a plurality of die having first and second metal layers on a die surface to a board, comprising placing a first die onto a board comprising one of a ceramic or substrate board or metal lead frame having a solderable surface and placing the first die and the board into a reflow oven. The method includes reflowing at a first reflow temperature for a first period until the first metal board layer and at least one of the first and second metal die layers of the first die form an alloy to adhere the first die to the board. The alloy has a melting temperature higher than the first reflow temperature. Accordingly, additional die may be added at a later time and reflowed to attach to the board without causing the bonding of the first die to the board to fail.

Abstract: A method of bonding a plurality of die having first and second metal layers on a die surface to a board, comprising placing a first die onto a board comprising one of a ceramic or substrate board or metal lead frame having a solderable surface and placing the first die and the board into a reflow oven. The method includes reflowing at a first reflow temperature for a first period until the first metal board layer and at least one of the first and second metal die layers of the first die form an alloy to adhere the first die to the board. The newly formed alloy has a higher melting temperature than the first reflow temperature. Accordingly, additional die may be reflowed and attached to the board without causing the bonding of the first die to the board to fail if the same reflow temperature is used.

Abstract: A semiconductor package includes: a die coupled to a substrate; a housing coupled to the substrate and at least partially enclosing the die within a cavity of the housing, and; a pin fixedly coupled to the housing and electrically coupled with the die. The pin includes a reversibly elastically deformable lower portion, which in implementations includes a spring, configured to compress to prevent a lower end of the pin from lowering beyond a predetermined point relative to the substrate when the housing is lowered to be coupled to the substrate. The pin is fixedly coupled in a top of the housing and is configured to be coupled with the substrate by lowering the housing towards the substrate. In implementations the pin includes two rigid portions coupled together only with a coil spring, the spring biasing the rigid portions away from one another when the housing is lowered towards the substrate.

Abstract: In one embodiment, a method of forming an electronic device includes providing a wafer having plurality of die separated by spaces. The method includes plasma singulating the wafer through the spaces to form singulation lines that expose side surfaces of the plurality of die. The method includes forming an insulating layer on the exposed side surfaces. In one embodiment, the steps of singulating and forming the insulating layer are carried out with the wafer mounted to a carrier substrate that supports the wafer and singulated die during both steps.

Abstract: A semiconductor package includes: a die coupled to a substrate; a housing coupled to the substrate and at least partially enclosing the die within a cavity of the housing, and; a pin fixedly coupled to the housing and electrically coupled with the die. The pin includes a reversibly elastically deformable lower portion, which in implementations includes a spring, configured to compress to prevent a lower end of the pin from lowering beyond a predetermined point relative to the substrate when the housing is lowered to be coupled to the substrate. The pin is fixedly coupled in a top of the housing and is configured to be coupled with the substrate by lowering the housing towards the substrate. In implementations the pin includes two rigid portions coupled together only with a coil spring, the spring biasing the rigid portions away from one another when the housing is lowered towards the substrate.