Abstract: The invention relates to an implantable pacemaker. This pacemaker comprises at least one conducting cable (11) electrically connecting a control box (10) to at least one electrode placed at a point in the patient's heart, the said control box (10) comprising a power supply system and an electronic system, and is characterised in that at least part of the said electronic system is remote from the control box (10) and is located at the at least one electrode to form an electrode module (13, 14a, 14b), the electrode module being placed on the outside surface of the heart.

Abstract: The invention concerns a current-voltage converter comprising electronic means (3,R) to supply a voltage (Vout)from a current (Iph). The converter comprises first means (4, K) to apply or not apply the current at converter input, second means (ECH1) to sample and memorize a voltage (Vout1) at converter output when the current is applied at converter input, third means (ECH2) to sample and memorize a voltage (Vout2, Vout3) at converter output when the current is not applied at converter input, and fourth means (S) for subtracting the voltage sampled and memorized by the third means (ECH2) from the voltage sampled and memorized by the second means (ECH1).

Abstract: A method and device for managing the functioning under irradiation of an electronic component having a nominal supply voltage. During a test phase there is applied to the component an initial supply voltage less than the nominal voltage and the functioning of the component is checked. Next, during a working phase, the nominal supply voltage is applied to the component, and finally, during an off-load phase, an off-load voltage is applied to the component in order to determine whether the electronic component functions under irradiation.

Abstract: The present invention relates to a process for the production of a random access memory of the preloading static type, in which use is made of a static random access memory constituted by MOS transistors formed from the memory flip-flop array and in which a particle or photon beam is applied to the said MOS transistors in such a way that the accumulated dose received exceeds a predetermined value.

Abstract: A process for extending the operating period of a circuit having MOS components exposed to gamma radiation wherein identical systems (10a, 10b, 10c) forming the circuit are switched on in turn. Exposure to radiation causes the MOS components to deteriorate. However, when one of the systems are "on", the others are "off" and are able to partly or fully recover their original characteristics. The systems are operated for a period of time shorter than that required for deterioration. Specific application to intervention robotics on nuclear sites and space installations.

Abstract: A pulsed eddy current testing system for detecting defects in a part. A probe carries an exciting pulse in one coil and receives a measuring signal in a second coil. The measuring signal is sampled at two instants defined by short and long time lags. The two amplitudes obtained are plotted in a representative plane having two reference axes. The point having the signals as coordinates describes a figure eight, when the part has a defect. The size and orientation of the figure gives information on the defect in the part.