Abstract: A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from <110> in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.

Abstract: An electro-optic modulator includes a doped semiconductor crystal having a crystallographic surface having an amplitude modulation orientation, a first metal electrode located on a first surface of the doped semiconductor crystal, a second metal electrode located on a second surface of the doped semiconductor crystal, and accumulation space charge regions located within surface regions of the doped semiconductor crystal that are proximal to the first metal electrode and the second metal electrode and including excess charge carriers of a same type as majority charge carriers of the doped semiconductor crystal.

Abstract: An electro-optic modulator includes a doped semiconductor crystal having a crystallographic surface having an amplitude modulation orientation, a first metal electrode located on a first surface of the doped semiconductor crystal, a second metal electrode located on a second surface of the doped semiconductor crystal, and accumulation space charge regions located within surface regions of the doped semiconductor crystal that are proximal to the first metal electrode and the second metal electrode and including excess charge carriers of a same type as majority charge carriers of the doped semiconductor crystal.