Patents by Inventor Francis Kanyiri Mungai

Francis Kanyiri Mungai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma induced modification of silicon carbide surface
    Patent number: 11692267
    Abstract: Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.
    Type: Grant
    Filed: December 31, 2020
    Date of Patent: July 4, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Francis Kanyiri Mungai, Vijayabhaskara Venkatagiriyappa, Yung-Cheng Hsu, Keiichi Tanaka, Mario D. Silvetti, Mihaela A. Balseanu
  • Susceptor wafer chucks for bowed wafers
    Patent number: 11581213
    Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: February 14, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Abhishek Chowdhury, Vijayabhaskara Venkatagiriyappa, Mihaela A. Balseanu, Jyoti Prakash Deo, Srinivas Ramakrishna, Keiichi Tanaka, Mandyam Sriram, Francis Kanyiri Mungai, Mario D. Silvetti, Sriharish Srinivasan
  • PLASMA INDUCED MODIFICATION OF SILICON CARBIDE SURFACE
    Publication number: 20220205095
    Abstract: Apparatus and methods for modifying a susceptor having a silicon carbide (SiC) surface. The method includes exposing the silicon carbide surface (SiC) to an atmospheric plasma. The method increases the atomic oxygen content of the silicon carbide (SiC) surface. The disclosure also describes a plasma treatment apparatus having a susceptor holding assembly and a plasma nozzle.
    Type: Application
    Filed: December 31, 2020
    Publication date: June 30, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Francis Kanyiri Mungai, Vijayabhaskara Venkatagiriyappa, Yung-Cheng Hsu, Keiichi Tanaka, Mario D. Silvetti, Mihaela A. Balseanu
  • SUSCEPTOR WAFER CHUCKS FOR BOWED WAFERS
    Publication number: 20220093443
    Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.
    Type: Application
    Filed: September 23, 2020
    Publication date: March 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Abhishek Chowdhury, Vijayabhaskara Venkatagiriyappa, Mihaela A. Balseanu, Jyoti Prakash Deo, Srinivas Ramakrishna, Keiichi Tanaka, Mandyam Sriram, Francis Kanyiri Mungai, Mario D. Silvetti, Sriharish Srinivasan