Abstract: Channel material is conformally deposited along sidewalls of one or more etched features of a mold stack in fabricating a three-terminal memory device. The channel material is deposited in recessed regions and non-recessed regions of the one or more etched features. A sacrificial liner is deposited on the channel material. A directional etch removes the sacrificial liner from non-recessed regions of the one or more etched features. An isotropic etch removes the channel material from non-recessed regions of the one or more etched features, leaving the channel material and the sacrificial liner intact in the recessed regions. The sacrificial liner is removed, leaving the channel material intact and isolated with minimal loss of channel material from over-etch.

Abstract: A tool and method for processing substrates by encapsulating a mask to protect from degradation during an etch-back to prevent a feature liner material from pinching off an opening during deposition-etch cycles used to fabricate high aspect ratio features with very tight critical dimension control.

Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

Abstract: A method for etching features in a stack below a carbon containing mask is provided. The stack is cooled to a temperature below ?20° C. An etch gas is provided comprising a free fluorine providing component, a hydrogen containing component, a hydrocarbon containing component, and a fluorocarbon containing component. A plasma is generated from the etch gas. A bias is provided with a magnitude of at least about 400 volts to accelerate ions from the plasma to the stack. Features are selectively etched in the stack with respect to the carbon containing mask.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant, with a coolant temperature below ?20° C. An etch gas comprising a metal containing component, a carbon containing component, and a halogen containing component is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched in the stack with respect to the patterned mask.

Abstract: A method for etching features in a stack below a carbon containing mask is provided. The stack is cooled to a temperature below ?20° C. An etch gas is provided comprising a free fluorine providing component, a hydrogen containing component, a hydrocarbon containing component, and a fluorocarbon containing component. A plasma is generated from the etch gas. A bias is provided with a magnitude of at least about 400 volts to accelerate ions from the plasma to the stack. Features are selectively etched in the stack with respect to the carbon containing mask.

Abstract: Methods and apparatus for etching a feature in a substrate are provided. The feature may be etched in dielectric material, which may or may not be provided in a stack of materials. The substrate may be etched using cryogenic temperatures and particular classes of reactants. In various examples, the substrate may be etched at a temperature of about ?20° C. or lower, using a mixture of reactants that includes at least one reactant that is an iodine-containing fluorocarbon, an iodine-containing fluoride, a bromine-containing fluorocarbon, a sulfur-containing reactant, or one of another select set of reactants. In various embodiments, the combination of low processing temperature with particular reactants results in very effective bow control.