Patents by Inventor Francisco Bloom

Francisco Bloom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant
    Publication number: 20210202842
    Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.
    Type: Application
    Filed: February 25, 2021
    Publication date: July 1, 2021
    Inventors: Omrane Fadhel, Carsten Rothe, Jan Birnstock, Ansgar Werner, Kai Gilge, Jens Angermann, Mike Zöllner, Francisco Bloom, Thomas Rosenow, Tobias Canzler, Tomas Kalisz, Ulrich Denker
  • Organic light-emitting diode including an electronic transport layer comprising a three component blend of a matrix compound and two lithium compounds
    Patent number: 10522778
    Abstract: The present invention relates to an organic light-emitting diode (100) comprising an emission layer (150) and at least one electron transport layer (161), wherein the at least one electron transport layer (161) comprises at least one matrix compound and at least two lithium compounds.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: December 31, 2019
    Assignee: Novaled GmbH
    Inventors: Francisco Bloom, Thomas Rosenow, Tobias Canzler, Bodo Wallikewitz
  • Organic Light-Emitting Diode Including an Electronic Transport Layer Comprising a Three Component Blend of a Matrix Compound and Two Lithium Compounds
    Publication number: 20170301876
    Abstract: The present invention relates to an organic light-emitting diode (100) comprising an emission layer (150) and at least one electron transport layer (161), wherein the at least one electron transport layer (161) comprises at least one matrix compound and at least two lithium compounds.
    Type: Application
    Filed: September 30, 2015
    Publication date: October 19, 2017
    Inventors: Francisco Bloom, Thomas Rosenow, Tobias Canzler, Bodo Wallikewitz
  • N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant
    Publication number: 20160322568
    Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.
    Type: Application
    Filed: December 23, 2014
    Publication date: November 3, 2016
    Inventors: Omrane Fadhel, Carsten Rothe, Jan Birnstock, Ansgar Werner, Kai Gilge, Jens Angermann, Mike Zöllner, Francisco Bloom, Thomas Rosenow, Tobias Canzler, Tomas Kalisz, Ulrich Denker