Patents by Inventor Francisco C. Cruz, Jr.

Francisco C. Cruz, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 6833611
    Abstract: A semiconductor device mainly comprises a chip disposed on the upper surface of a substrate. The upper surface of the substrate is provided with a ground ring, a power ring, and a plurality of conductive traces arranged at the periphery of the ground ring and the power ring. The semiconductor device comprises at least a surface-mountable device connected across the ground ring and the power ring. The semiconductor device of the present invention is characterized by having at least a bonding wire formed across the surface-mountable device. The bonding wire is connected between one of the bonding pads of the chip and the power ring wherein at least one downward depression is formed in a lengthen portion at a top of the bonding wire.
    Type: Grant
    Filed: May 27, 2003
    Date of Patent: December 21, 2004
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Sheng Tsung Liu, Francisco C. Cruz, Jr.
  • Semiconductor device
    Patent number: 6429536
    Abstract: A semiconductor device mainly comprises a chip disposed on the upper surface of a substrate. The upper surface of the substrate is provided with a ground ring, a power ring, and a plurality of conductive traces arranged at the periphery of the ground ring and the power ring. The semiconductor device comprises at least a surface-mountable device connected across the ground ring and the power ring. The semiconductor device of the present invention is characterized by having at least a bonding wire formed across the surface-mountable device. The bonding wire is connected between one of the bonding pads of the chip and the power ring wherein at least one downward depression is formed in a lengthen portion at a top of the bonding wire.
    Type: Grant
    Filed: July 12, 2000
    Date of Patent: August 6, 2002
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Sheng-Tsung Liu, Francisco C. Cruz, Jr.