Abstract: A sensor for contactlessly detecting currents, has a sensor element having a magnetic tunnel junction (MTJ), and detection circuitry, the sensor element having a resistance which varies with the magnetic field, and the detection circuitry is arranged to detect a tunnel current flowing through the tunnel junction. The sensor element may share an MTJ stack with memory elements. Also it can provide easy integration with next generation CMOS processes, including MRAM technology, be more compact, and use less power. Solutions for increasing sensitivity of the sensor, such as providing a flux concentrator, and for generating higher magnetic fields with a same current, such as forming L-shaped conductor elements, are given. The greater sensitivity enables less post processing to be used, to save power for applications such as mobile devices. Applications include current sensors, built-in current sensors, and IDDQ and IDDT testing, even for next generation CMOS processes.

Abstract: An integrated circuit device has boundary scan structure coupled between a test input (TDI) and the test output (TDO). The test register structure is used to shift information from the test input to a test output. Test data is transported from the input to the output by shifting. The test shift register structure contains a data shift part (106) coupled to connections (12) for a functional circuit under test. In parallel with the data shift part is an instruction shift structure (102, 104). By means of test control signals it is controlled whether instruction information travels from the test input to the test output through the instruction shift part or whether data travels from the test input to the test output through the data shift the instruction shift part controls operation of the device in a test mode. A sensor (14) is provided for sensing a physical operating parameter of the device.

Abstract: A test arrangement for testing the interconnections of an electronic circuit (100) and a further electronic circuit is provided. A first selection of I/O nodes (120), which are arranged to receive input data in a functional mode of the electronic circuit (100), and which are coupled to a test unit in a test mode of the electronic circuit (100). The test unit has a combinatorial circuit (160) for implementing a multiple-input XOR or XNOR gate. The test unit also provides interconnections between the first selection of I/O nodes (120) and a second selection of I/O nodes (130) via logic gates (141-144). These interconnections increase the interconnect test coverage of the electronic device (100), because the interconnects with the further electronic circuits that are associated with I/O nodes (131-134) become testable as well.