Patents by Inventor Franciscus Godefridus Casper Bijnen
Franciscus Godefridus Casper Bijnen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11966166Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.Type: GrantFiled: July 16, 2021Date of Patent: April 23, 2024Assignee: ASML NETHERLANDS B.V.Inventors: Franciscus Godefridus Casper Bijnen, Edo Maria Hulsebos, Henricus Johannes Lambertus Megens, Robert John Socha, Youping Zhang
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Patent number: 11927892Abstract: Disclosed is a substrate, associated patterning device and a method for measuring a position of the substrate. The method comprises performing an alignment scan of an alignment mark to obtain simultaneously: a first measurement signal detected in a first measurement channel and a second measurement signal detected in a second measurement channel. The first and second measurement signals are processed by subtracting a first direction component of the first measurement signal from a first direction component of the second measurement signal to obtain a first processed signal, the first direction components relating to said first direction. The position of an alignment mark is determined with respect to the first direction from the first processed signal.Type: GrantFiled: November 17, 2020Date of Patent: March 12, 2024Assignee: ASML Netherlands B.V.Inventors: Franciscus Godefridus Casper Bijnen, Edo Maria Hulsebos
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Patent number: 11874103Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.Type: GrantFiled: August 26, 2021Date of Patent: January 16, 2024Assignee: ASML NETHERLANDS B.V.Inventors: Franciscus Godefridus Casper Bijnen, Junichi Kanehara, Stefan Carolus Jacobus Antonius Keij, Thomas Augustus Mattaar, Petrus Franciscus Van Gils
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Patent number: 11803130Abstract: An alignment apparatus includes an illumination system configured to direct one or more illumination beams towards an alignment target and receive the diffracted beams from the alignment target. The alignment apparatus also includes a self-referencing Interferometer configured to generate two diffraction sub-beams, wherein the two diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment apparatus further includes a beam analyzer configured to generate interference between the overlapped components of the diffraction sub-beams and produce two orthogonally polarized optical branches, and a detection system configured to determine a position of the alignment target based on light intensity measurement of the optical branches, wherein the measured light intensity is temporally modulated by a phase modulator.Type: GrantFiled: August 5, 2020Date of Patent: October 31, 2023Assignees: ASML Netherlands B.V., ASML Holding N.V.Inventors: Franciscus Godefridus Casper Bijnen, Muhsin Eralp, Simon Reinald Huisman, Arie Jeffrey Den Boef
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Publication number: 20230236515Abstract: Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.Type: ApplicationFiled: June 8, 2021Publication date: July 27, 2023Applicant: ASML Netherlands B.V.Inventors: Maurits VAN DER SCHAAR, Patrick WARNAAR, Franciscus Godefridus Casper BIJNEN, Olger Victor ZWIER
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Publication number: 20230168595Abstract: A method of, and associated apparatuses for, performing a position measurement on an alignment mark including at least a first periodic structure having a direction of periodicity along a first direction. The method includes obtaining signal data relating to the position measurement and fitting the signal data to determine a position value. The fitting uses one of a modulation fit or a background envelope periodic fit.Type: ApplicationFiled: May 11, 2021Publication date: June 1, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Edo Maria HULSEBOS, Franciscus Godefridus Casper BIJNEN
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Publication number: 20230004097Abstract: Disclosed is a substrate, associated patterning device and a method for measuring a position of the substrate. The method comprises performing an alignment scan of an alignment mark to obtain simultaneously: a first measurement signal detected in a first measurement channel and a second measurement signal detected in a second measurement channel. The first and second measurement signals are processed by subtracting a first direction component of the first measurement signal from a first direction component of the second measurement signal to obtain a first processed signal, the first direction components relating to said first direction. The position of an alignment mark is determined with respect to the first direction from the first processed signal.Type: ApplicationFiled: November 17, 2020Publication date: January 5, 2023Applicant: ASML Netherlands B.V.Inventors: Franciscus Godefridus Casper BIJNEN, Edo Maria HULSEBOS
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Patent number: 11531280Abstract: An apparatus and system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to a compact integrated optical device to create self images of the alignment mark which may be manipulated (e.g., mirrored, polarized) and combined to obtain information on the position of the mark and distortions within the mark. Also disclosed is a system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to an optical fiber arrangement to obtain information such as the position of the mark and distortions within the mark.Type: GrantFiled: August 22, 2019Date of Patent: December 20, 2022Assignees: ASML HOLDING N.V., ASML NETHERLANDS B.V.Inventors: Tamer Mohamed Tawfik Ahmed Mohamed Elazhary, Justin Lloyd Kreuzer, Franciscus Godefridus Casper Bijnen, Krishanu Shome
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Publication number: 20220397833Abstract: An alignment apparatus includes an illumination system configured to direct one or more illumination beams towards an alignment target and receive the diffracted beams from the alignment target. The alignment apparatus also includes a self-referencing Interferometer configured to generate two diffraction sub-beams, wherein the two diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment apparatus further includes a beam analyzer configured to generate interference between the overlapped components of the diffraction sub-beams and produce two orthogonally polarized optical branches, and a detection system configured to determine a position of the alignment target based on light intensity measurement of the optical branches, wherein the measured light intensity is temporally modulated by a phase modulator.Type: ApplicationFiled: August 5, 2020Publication date: December 15, 2022Applicants: ASML Netherlands B.V., ASML Holding N.V.Inventors: Franciscus Godefridus Casper BIJNEN, Muhsin ERALP, Simon Reinald HUISMAN, Arie Jeffrey DEN BOEF
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Patent number: 11442372Abstract: The invention provides a method of measuring an alignment mark or an alignment mark assembly, wherein the alignment mark comprises grid features extending in at least two directions, the method comprising: measuring the alignment mark or alignment mark assembly using an expected location of the alignment mark or alignment mark assembly, determining a first position of the alignment mark or alignment mark assembly in a first direction, determining a second position of the alignment mark or alignment mark assembly in a second direction, wherein the second direction is perpendicular to the first direction, determining a second direction scan offset between the expected location of the alignment mark or alignment mark assembly in the second direction and the determined second position, and correcting the first position on the basis of the second direction scan offset using at least one correction data set to provide a first corrected position.Type: GrantFiled: February 25, 2020Date of Patent: September 13, 2022Assignee: ASML Netherlands B.V.Inventors: Franciscus Godefridus Casper Bijnen, Ralph Brinkhof
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Publication number: 20220187722Abstract: The invention provides a method of measuring an alignment mark or an alignment mark assembly, wherein the alignment mark comprises grid features extending in at least two directions, the method comprising: measuring the alignment mark or alignment mark assembly using an expected location of the alignment mark or alignment mark assembly, determining a first position of the alignment mark or alignment mark assembly in a first direction, determining a second position of the alignment mark or alignment mark assembly in a second direction, wherein the second direction is perpendicular to the first direction, determining a second direction scan offset between the expected location of the alignment mark or alignment mark assembly in the second direction and the determined second position, and correcting the first position on the basis of the second direction scan offset using at least one correction data set to provide a first corrected position.Type: ApplicationFiled: February 25, 2020Publication date: June 16, 2022Applicant: ASML Netherlands B.V.Inventors: Franciscus Godefridus Casper BIJNEN, Ralph BRINKHOF
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Publication number: 20210381826Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.Type: ApplicationFiled: August 26, 2021Publication date: December 9, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Franciscus Godefridus Casper BIJNEN, Junichi KANEHARA, Stefan Carolus Jacobus Antonius KEIJ, Thomas Augustus MATTAAR, Petrus Franciscus VAN GILS
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Patent number: 11181836Abstract: A method for determining substrate deformation includes obtaining first measurement data associated with mark positions, from measurements of a plurality of substrates; obtaining second measurement data associated with mark positions, from measurements of the plurality of substrates; determining a mapping between the first measurement data and the second measurement data; and decomposing the mapping, by calculating an eigenvalue decomposition for the mapping, to separately determine a first deformation (e.g. mark deformation) that scales differently from a second deformation (e.g. substrate deformation) in the mapping between the data. The steps of determining a mapping and decomposing the mapping may be performed together using non-linear optimization.Type: GrantFiled: May 28, 2018Date of Patent: November 23, 2021Assignee: ASML Netherlands B.V.Inventors: Edo Maria Hulsebos, Patricius Aloysius Jacobus Tinnemans, Franciscus Godefridus Casper Bijnen
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Publication number: 20210341846Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.Type: ApplicationFiled: July 16, 2021Publication date: November 4, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Franciscus Godefridus Casper BIJNEN, Edo Maria HULSEBOS, Henricus Johannes Lambertus MEGENS, Robert John SOCHA, Youping ZHANG
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Publication number: 20210318627Abstract: An apparatus and system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to a compact integrated optical device to create self images of the alignment mark which may be manipulated (e.g., mirrored, polarized) and combined to obtain information on the position of the mark and distortions within the mark. Also disclosed is a system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to an optical fiber arrangement to obtain information such as the position of the mark and distortions within the mark.Type: ApplicationFiled: August 22, 2019Publication date: October 14, 2021Inventors: Tamer Mohamed Tawfik Ahmed Mohamed ELAZHARY, Justin Lloyd KREUZER, Franciscus Godefridus Casper BIJNEN, Krishanu SHOME
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Patent number: 11105619Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.Type: GrantFiled: July 13, 2018Date of Patent: August 31, 2021Assignee: ASML Netherlands B.V.Inventors: Franciscus Godefridus Casper Bijnen, Junichi Kanehara, Stefan Carolus Jacobus Antonius Keij, Thomas Augustus Mattaar, Petrus Franciscus Van Gils
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Patent number: 11079684Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.Type: GrantFiled: December 21, 2018Date of Patent: August 3, 2021Assignee: ASML Netherlands B.V.Inventors: Franciscus Godefridus Casper Bijnen, Edo Maria Hulsebos, Henricus Johannes Lambertus Megens, Robert John Socha, Youping Zhang
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Patent number: 11054813Abstract: In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.Type: GrantFiled: September 21, 2016Date of Patent: July 6, 2021Assignee: ASML Netherlands B.V.Inventors: Alexander Ypma, David Frans Simon Deckers, Franciscus Godefridus Casper Bijnen, Richard Johannes Franciscus Van Haren, Weitian Kou
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Patent number: 11029610Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.Type: GrantFiled: September 4, 2018Date of Patent: June 8, 2021Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Edo Maria Hulsebos, Henricus Johannes Lambertus Megens, Ahmet Koray Erdamar, Loek Johannes Petrus Verhees, Willem Seine Christian Roelofs, Wendy Johanna Martina Van De Ven, Hadi Yagubizade, Hakki Ergün Cekli, Ralph Brinkhof, Tran Thanh Thuy Vu, Maikel Robert Goosen, Maaike Van T Westeinde, Weitian Kou, Manouk Rijpstra, Matthijs Cox, Franciscus Godefridus Casper Bijnen
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Publication number: 20210149316Abstract: A method for determining substrate deformation includes obtaining first measurement data associated with mark positions, from measurements of a plurality of substrates; obtaining second measurement data associated with mark positions, from measurements of the plurality of substrates; determining a mapping between the first measurement data and the second measurement data; and decomposing the mapping, by calculating an eigenvalue decomposition for the mapping, to separately determine a first deformation (e.g. mark deformation) that scales differently from a second deformation (e.g. substrate deformation) in the mapping between the data. The steps of determining a mapping and decomposing the mapping may be performed together using non-linear optimization.Type: ApplicationFiled: May 28, 2018Publication date: May 20, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Edo Maria HULSEBOS, Patricius Aloysius Jacobus TINNEMANS, Franciscus Godefridus Casper BIJNEN